NTFG6P02, NVFGP02
MOSFET - Power,
P-Channel, SOT-223
-10 A, -20V
Featur
* Low Rpsioa)
© Logic Level Gate Drive
© Diode Exhibits High Speed, Soft Recovery
© avalanche Energy Specified
‘© NVE Prefix for Automotive and Other Applications Requising
Unique Site and Control Change Requirements; AEC-QUO1
(Qualified and PPAP Capable*
© These Devices ate Pb-Free and are RoHS Compliant
‘Typical Applications
«© Power Management in Postables aud Battery-Powered Products,
i.e. Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (7, = 25°C unloss otherwise noted)
Rating ‘Symbol | value | unit
Drain-to-Soures Voage Voss | 20 | vac
Gate-to-Soures Volage Vos | 20_| ver
tp | a0 | ase
bo | as
= Single Pulse t= 10 ye) tom | 25 | Aok
Talal Power Dissipation @ Ta = 250 Po | 3s |W
‘Operating and Sioage Temperature Range | Tu Tag | Sem |
150
‘nga Puse Draln-to-Sourea Avaanone | Eqs | 150 | mu
Energy ~ Staring Ts ~ 25°C
(pg > -20 Vee, Ving = 50 Ve,
hugh = 10, L= 80 mH, Rg = 250)
Thermal Resistance ow
*lanetion to Lead (Nats 1) Fu. | 15,
Taunaton fe Ambigat (Note 2) Pua | 714
Juneton to Ambient (Note 3) Fava | 160
Maximum Lead Temperature forSodering | 1. | 280 |
Purposes, 1/8” om caso for 10 saconds
ON Semiconductor”
ewonsemi.com
-10 AMPERES
-20 VOLTS
Ros(on) = 44 mQ (Typ.)
59
>
P-Channel MOSFET
MARKING DIAGRAM
& PIN ASSIGNMENT
> m4
ao
sors ae
as or
A -swonty ste
(Note: Mirodat may bein ethor locaton)
ORDERING INFORMATION
‘Sressea exceoding those lated in the Manimur Ratings ible may Gamage the
‘dovioe. It any of esa lis are exceaded, davies functionally shoud not be
‘gesumed, damage may occur and raabilty may be afecod.
TP steady State
2. When surface mounted oan FR board using 1" pad size
(Cu. Area 1.127 sqin, Steady State
2, When surface mounted o an FR board using minimum recommended pad
Sze, (Cu. Area 0.412 sq in), Steady State
© senicanaa: Compose ates LLG 208 i
May, 2019 Rev.7
Device | Package | _ Shipping’
NtFepo2Tag | Sor-2a3 | 4000 /Tape &
(Po-Free) Roel
NvrepoaTae | sor-z23 | 4000/Tape &
(Pb-Free) Reel
“For information on tape and real spacticaions,
including part orentation and tape sizes, please
tater to our Tape and Feel Packasing Spacicaions
Brochure, BADEOTT/D.
Publication Order Numbor
NTFePO2Ta;DNTF6P02, NVF6P02
ELECTRICAL CHARACTERISTICS (1, = 25°0 unless otnerwise noted)
‘Characteristic ‘symbol | Min [ Typ | Max | Unit
OFF CHARACTERISTICS
‘rain-to-Souroe Breakdown votlage (Nate 4) ae
(Was = 0 Vée, ig = 250 wAde) oo | 2] -
Temperature Cosficiont (Poste) = | en | = | we
Zero Gate Vokage Drain Gurrent Toss Wade
(og = "20 Vd, Vg = OV) - | - | a0
(Vos = -20 Ve, Ves = 0 Vee, Ty = 125%) = | = | =
Gate- Body Leakage Current lass =| - [#100 | nade
(gg = 8.0 Vee, Voy 0 Vee)
(ON CHARACTERISTICS (Note 4)
Galo Thveahoid voraga \Nate 4) Vestn ae
(os = Vas lp = ~250 wAde} -o4 | -o7 | 10
Threshold Temperature Cosficient (Negative) ~ | 28 | = [awe
‘Stas Drain-16-Sowoe On-Rosistance (Nate 4) Rosie ma
(gg = #5 Veo Ip = 80 Ace) - | a | 2
58 = -25 Veo Ip = 4.0 Ado) = | x | 7
(Wag = 25 Vd, Ip = 3.0 Ado) ee
Forward Transconductance (Note 4) oe ~ [2 | - | mes
(pg = 10 Vde, Ip = ~8.0 Ade)
DYNAMIC CHARACTERISTICS.
Tnpat Capacitance Wos = 10 Vie, Vos 0, on a
Output Capactance ona) Cone Ss ar
Transfer Capacitance Cus a
Trpat Capacitance Wos = 10 Vie, Vos 0%, Cx a
Output Capactance soma) Cone ary
Transtar Capaciance Cae pe
SWITCHING CHARACTERISTICS (Noi 5)
Turion Delay Time Ton a
Free Tine t ps pe
Turn-OF Delay Tine won pee
FaiTine t
Tarn-On Delay Tine ‘won =
Free Tine T a
Turn-OF Delay Tine ‘aon ae ce
FaiTine a
Gale Gnarge Wig = 18 Veep: a
Vs = -45 Wa) (ote 4) s+
a3
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-vaTage Te = 20 All, Veg =O VE) Naw) —] Veo ae ee
(j= -21 Ade Vgs = 0Vde) = | -o7 | =
(ig =-80 Ade, Vos 2 | tie | >
Faversa Recovery Time Ty = 80 Ado, Vag = 0 Var, a — pep =
‘git ~ 100 Alns) (Note 4)
Te po
a — psf
Rovers Recovery Stored Oharge ora = [eee [=
4 Pulse Teak. Pulse Wich £300 ys, Duly Gyde 220%.
5. Switching characterstes are independent ct operating junction temperatures.
‘ynnw.onsami.com
2NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
1% 2
a0 Vos? 10
pow F 0
Boy g
z 4 2
3 58
S 4 5°
g aisv g
& i
3 av © |
7 Nos = -12V 7
0 °
o 1 2 @ 4 5 6 7 8 8 0 o 081 Se 25a
Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics Figure 2. Transter Characteristics
€ &
B02 08
2 2
5 p=soa_| 8° =
& ors Rime 7 8 Yes
e © 0.06]
y i
E 8 of
3 ‘ 3°"
2 Soo
2 005] z
é 2 0.03)
g 5
z Eo.
g °o ee
“Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) fp, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Figure 4, On-Resistance versus Drain Current
Gate-to-Souree Voltage and Gate Voltage
4 9 10000
Bo
ggi2 8
EN 1000]
Bz
£3 10 4
eg 8
re .
2% 08
3 00 100
Eo 0 & 0 15 10 ws wo 2 4 6 8 10 1 4 16 18 2
Ts, JUNCTION TEMPERATURE 0)
Figure 5. On-Resistance Variation with
Temperature
‘ynnw.onsami.cor
2
“Nps ORAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain-to-Source Leakage Current
versus Voltage© CAPACITANCE (oF)
A TIME ins)
3000
2400
1800
1200
600
°
$000
NTI
F6PO2, NVF6PO2
TYPICAL ELECTRICAL CHARACTERISTICS
Vos =0¥ [Vaq= OV =? s
Cus y 8
8 es 8
3 g
3 he a
Bo a
e s
A, ip--00A_|, 2
5 Base —]* g
Fo 2
0 SMesoVoys 1s a7 0 + ° %
\ [faa [ase [ara
C
Bea A T 2.30 BSC
020 | == |
i
ae
SIDE VIEW FRONT VIEW | 150] 175 | 200
He_| 670 | 700 | 7.30
Ce
6 t 3.80
—} 200
at ; f
DETAIL A Sa Es
2.00
t
220 Ls,
PITCH Sx 150
RECOMMENDED MOUNTING
FOOTPRINTNTF6P02, NVF6P02
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PUBLICATION ORDERING INFORMATION
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7 NTFSPO2TSD