RURD660, RURD660S

Data Sheet January 2002

6A, 600V Ultrafast Diodes Features

The RURD660 and RURD660S are ultrafast diodes with soft • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns
recovery characteristics (trr < 55ns). They have low forward
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction. • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

These devices are intended for use as freewheeling/ • Avalanche Energy Rated
clamping diodes and rectifiers in a variety of switching power • Planar Construction
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing Applications
and electrical noise in many power switching circuits
reducing power loss in the switching transistors. • Switching Power Supplies

Formerly developmental type TA49038. • Power Switching Circuits

• General Purpose
Ordering Information
PART NUMBER PACKAGE BRAND
Packaging
JEDEC STYLE TO-251
RURD660 TO-251 RUR660

RURD660S TO-252 RUR660 ANODE

CATHODE CATHODE
NOTE: When ordering, use the entire part number. Add the suffix 9A (FLANGE)
to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.

Symbol
K JEDEC STYLE TO-252

CATHODE
(FLANGE)

A CATHODE
ANODE

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

RURD660
RURD660S UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 6 A
(TC = 155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 12 A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 60 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 50 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC

Maximum Lead Temperature for Soldering

Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG 260 oC

©2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B

 RURD660, RURD660S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS

VF IF = 6A - - 1.5 V

IF = 6A, TC = 150oC - - 1.2 V

IR VR = 600V - - 100 µA

VR = 600V, TC = 150oC - - 500 µA

trr IF = 1A, dIF/dt = 200A/µs - - 55 ns

IF = 6A, dIF/dt = 200A/µs - - 60 ns

ta IF = 6A, dIF/dt = 200A/µs - 28 - ns

tb IF = 6A, dIF/dt = 200A/µs - 16 - ns

QRR IF = 6A, dIF/dt = 200A/µs - 150 - nC

CJ VR = 10V, IF = 0A - 25 - pF

RθJC - - 3 oC/W

DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.

Typical Performance Curves

30
500
175oC
100
IF , FORWARD CURRENT (A)

IR , REVERSE CURRENT (µA)

10
10
100oC

100oC
0.1
175oC 25oC
25oC
1 0.01

0.5 0.001
0 0.5 1 1.5 2 2.5 0 100 200 300 400 500 600
VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE

©2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B

 RURD660, RURD660S

Typical Performance Curves (Continued)

50 90
TC = 25oC, dIF/dt = 200A/µs TC = 100oC, dIF/dt = 200A/µs

75
40
t, RECOVERY TIMES (ns)

t, RECOVERY TIMES (ns)

trr 60
trr
30
45
ta
20 ta
30
tb
10 tb
15

0 0
0.5 1 6 0.5 1 6
IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A)

FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT

100 6
IF(AV) , AVERAGE FORWARD CURRENT (A)
TC = 175oC, dIF/dt = 200A/µs

5
80
t, RECOVERY TIMES (ns)

DC
trr
4
60 SQ. WAVE
3

40 ta
2
tb
20
1

0 0
0.5 1 6 145 150 155 160 165 170 175
IF , FORWARD CURRENT (A) TC , CASE TEMPERATURE (oC)

FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE

75
CJ , JUNCTION CAPACITANCE (pF)

60

45

30

15

0
0 50 100 150 200
VR , REVERSE VOLTAGE (V)

FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE

©2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B

 RURD660, RURD660S

Test Circuits and Waveforms

VGE AMPLITUDE AND
RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF

DUT CURRENT dIF trr

RG SENSE IF
+ dt ta tb
VGE VDD 0
t1 IGBT -
0.25 IRM
t2
IRM

FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS

I = 1A
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
VAVL
Q1 = IGBT (BVCES > DUT VR(AVL))
L R

CURRENT +
VDD IL IL
SENSE
Q1 I V
VDD
DUT -
t0 t1 t2 t

FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS

©2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
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