| 7 Whenrall 3 junctions are EE Unies: ASsiGNNenT about constrve on working 394 its 's 13, Explain brief contratied gectities (568) 1 chavacke ristics oF silico yor. TA 'S mace Ue OF Siicor Ris \Piew, Convey sy) ot aa ay can ack 3s rectifier, ale cemiconducting rater! Pet 0c Construction =| ay Waele lye ermioas 2 junctions (3, 32,33) + The tmree lerminals are anode, Gak1P Cathode and gate frrow head - anode i ee bar - Cathode tk 7 Be yrotal of diote a shoilar +0 St Working: Coma gE am forward bias, then sce will > Tis is divided into three modes 4. Perward Blocking mode : at Here, J, vecornes forward biased Tr will be reverse biased J, ig forward biased ; based on anode, cathode connections 4p patarities Therelore, there will be small cursent eventhough we \ncrease Voltage . 2. Forward Conduction mode: tere, when we have to give supply through gate “too. So, that Sa becomes Forward Biased. As in previous one. Ne] %T3 becomes forward Biased When we apply sopply voltage, doe voltage will drop and conduct 6 lineaslyree Blocking Mode we ve give supply, Si becomes 2 i h vewesse biased along With P Jy. Tn * i forward biased. i A nf we keed on Tog Ve id en cursent is Mown, that current . is lndependent of voltage applied f we apply above permisible level of voltage , Woection breakdown will occur geR conducts high curent << - g write short mote On following | 4 varactor_diode- : lhe erm vavackey \s originated from vasiable capacitor. varacker diode Operates only in reverse Kas, acts 35 variable Capatitor. Varackor diode is also called as_svaricap Diode Toning Diode syro bol | \ a > fran vk Vasialle reactance Diode Similar to Po quaction dicde Variable capacitance Dick Two parallel Nines at cathode side represents 2 Conductive plates and space between these two parallel lines vepresents. dielectaic Working: _ Should altoays be connected in! reverse bras th a forward Weltage is applied, the eleclvic cuvent flows through dAidde. Ae aresult, depletion region becomes negligitle. We know tat depletion region consists of stored Charges. So, sto reo Chaves becomes negligie which 1s und esivale . A aractoy diode is designed to storage electic charge yok to conduck elechic cursent. So, sim 7 When a reverse bias voltage is applrad , the & form n~ exer and holes from p-vegion woves alpay from Junctionee pence RE ie gee oaseiain le Ax a result, width whe of depletion vepion Tes ard Capacitance Wes — TE Appied geverse bias vollage - very low capacitance- vesy large — Capacdtance a 4 z iis Width of depletion region ~ Capacitance x surface area, of p-region and P-re0. — SE reverse bias voltage ter, widtn of depletion wgion ro capacitance further ves The decrease in capacitance means the i aga charge. So reverse bias voltage should be kept 4 a P 4 achieve lage storage chayge. Thus capactance ° varied ly varying the voltage The capacitance of Vavacto, dicde is meacured io picofarads (Pf) Applications Ye Vavactor diode is used in frequency mulbplrevs ¥ Vacactoy diode is used in parametric amplitiers F used in voltage - controlled oscillatoss 4 Twonel_ Diode ® tunnel diode is a heavily doped pn fonction diode | Wo whien elechic ceuik currenk wes as voltage ‘tes. Tt» Used as very fast Switching device in Computers, also used in high frequinty oscillators and amplifiers symbol.” anode 1 thor i ‘ eo . Tinned) dicde is made off Germanium Materia, Galiwe | Prsenide Gallinm Anti monide ard Silien. Working * skep a: Unbiased tunnel Diode: pte when Ye voltage is apphed © to tunnel diode, it is sad t be unbiased tunnel diode aoe hy \ The conduction band of eeeé ttype matesial oveslaps with \ t Valence band oF p-type Material because ot heavy doping. Because of overlapping, the CB ec at nside- SMe Gey Bt preside aye Nearly ae same energy level Petuee 4 en Guret Te tunnel wtrrect wottage ty)hen mMperature tes, gome e- tunnel tom “ ~~ $0 cian es of p-region. Similarly, holes tunnel ce v8 of = p-region fy cB of N-region gmat! Vo tage applied tunne) diode <2 St cmal) voltage iS applied to , diode which is < built-in ace of depletion laye, 70 i | fowors curTent flows —thregh Tuncton- However, A stall mo. of e& in coe of a-vegion will twmnel to empty | states ot VB io p- region, ‘ jis wih cleate a Small forward bias urna) Current. Thus, Tumynel Cutrent Slates | Resing with small application of voltage. Applied Voltage is slightly Ted. i al a fee when voltage applied to tunnel diode ic sligntty Ted, a lawye mo. of free e ak n-side and holes at p-sides are gemerated. The emergy level of an n-bype CB and enespy ES. oF p-tpe U8 are “equal - @ Yesult, max byemel ae Flows. Applied voltage is further a, , voltage is SRR Ce), 0 - fight misaligs of Ce , ve takes > _Pace-The e tunel fom ig t 2 a YB and cavse a small Cussent aos “Flow , since c@, VG SEI) overlay Ne le Ts , urrreat skavts bing. I f Stes uns er / Starts / deeceai 10g Weaiemsteniatiiak ancy Nwhe cae a - Step- 5 Applied voltage is iy e lavgely ted. | ot applied volkage WA Yarpet Red , the unneling “vent dvops ty 7000. Ar this polnk. 8 and y, | mo longer overlap aid tonne} | diode Operates @y nommal ea junction diode. TE applied wltage ic built i fotembral of | ; depletion ayer, Yegulay foxy ' d current Starts Mowing tnrous, turinel diode , The portion of cuwve in which tient Les as voltage Ae ig nepatne resistance region oF Suva diode } — resistance region 16 tnost Important and 4 mock widely Used Characteristic of tunnel diode | = Advantayes « long lite, high speed operation, Seve noice , ‘ lows power consurnption disadvantages scant be fabricated in lame no. +Beiny a 2 tenia) device, input and Dumpur arest Wolated fom ane another Nica Bo-ns:, ee, Nog mentonyy clanspe. devity - ured dm oulaxation oscillator circuit a sured as Ultra-high - sped Switch ey 7 wed ro PM receivers AY Tener diode: Describe zener diode operation with vequired cruit and characteristics. (doping Uanlent ip Mote’ ener diede is special ype of pm jwaction s¢ diode Reverse bredkdown voltage is adjusted precisely blu au to wm ? 200V. N\\ Whe roteol: — ey set = Working, ay Se diner" dlode is", used im veverte bias, and awanged fo break down when specie xewerse bias voltage ig applied tit when alode is um forward ferasing , the diode conduct = and their is Saw of eclectic tumvent, a8 normal pr—diod. riynction whede Gods” ik in veverse biastog, their is smal ant OF cussent flow Yn atode at Starting, which is called reverse leakage (untenje we go on Ting revere Voltage, at one pt of time diode. breaks down and dur to avalanche breakdown, | yarge art ot cunumt is. flown that can damage ex | ape diode. This can be overcomed by seme diode = zemer dict: im REVERSE biared condition is Used as voltage regulator, Tn tha, whem diode i6 im Yeverse bias, | emai) ame oF turent is flown, atapt | | of time voltage, the current stax tin | | ip a huge amt but , voltage yvermains | Constant even \ we apply more voltaged input} x yes characteristics : | In forward bias, when ) tuto voltage 1S reached, Weir toe eu Inthease am currents forward voltage a is Virnited. ; pe 1 omy Th yevevse bias, their f | is cursvert ry which is . Small and dus to Yoinowvity | | charges AL V2 (break down | Voltage) , the breakdown of ; & diode occuss, their will be [Sudden Te io curgent by Simiting syeguiakyy voltage. @ Seserive working of zener diode a voltage vegulator with relevent diagrams and equations. Fener diode gives const voltage output. Tt acts as voltage regulator. 5 Tn Zenev, doping» contem’ is more, Le» Tere eee Oe are addeq 0 that conduction process Tes. Asad Fey Noltage can be ved, But in ordinary Alode, lec impunt des axe added , So conductor is we , voltage ishoold be D> applied wnse- NV Case is | > aR: { } Tr inpuk voltage 1s applied oot Ge or, more, ener diode Lakes only ‘. * sssh \ = : \ Yequired svoltage , Remaining iS Re= current: eniting taken by Rs ie, Rs regulate, . Yesistor ox) Voltage, So that curent fey, Series yesistance Tt doesn't effect Ri- RU = load vesistos-‘ ae * a io case- iis educes its = : nk, gener Ur. ( Tk Lp voltage 16 consta’ and cwwnt - eny RL yes and > pemmb dine oa nee me as ~weguiatar. tn this way, Zone diode a \ dou, 5 Explain half-wave reckbers and Skekch hang and ou 7 wave Jorms derive eqns for ourpu be tage ' pees —, ite | l . | ‘ + is ¢ s 4 y = nea P a}lEs Sh 4 a | Supply. { } J ‘ ioe 4 & a Hg - g val * \ / \ 0 ee pee. | ’ ' I é; x Va = ‘ \ { | ae a when ik is forward for positive WalF cycle, When supply iH & piven 4p civeuit , the diode ss in forward bias, S i currevt flows’ theugh Clvéuitk, the divectiory of clreuit i) WIN be, +p epinde +R +O (SUppIQ) for fig- it; for negatwe hal cycle; when supply IS given, the diode is ww reverse bias, So no Cutremt Is flown, Tt i acts as opem Switdr , whereas for tve halt uydle , diode : acts as closed switch. o let ws Consider hall wave Tectifer, Let Na =Vm sins = [Oz wk) be atteynating wltage that appeay accross the secondary telnding PR. lee ve, A be diode vedstance & load resistance Yespectively, .. ®s the valto oF = power ehyecienty Cr) o peak Tyverse Voltage: the Max yeverse Volkage that diode fan withstand without clestroging junction. piv = Vm | Ripple fact . Tt has fimte ripple }_, pe power O}p to aly power tye is vecHhey the oudput current 16 pulsuating oC Thuugore, In order to Rod MC power avy current has ty be townd aut Pp aurunt > halt wave vectifley, Tye =Tag = 22 Un entis “irq NO rete | vg Voltage , Vac=Vaug =teo a ate ae Tene 7 sf | > Rae = Terns (E+ RY = Vegas Sens Tem = Im i a tee aOR ' MS fac = FewtYams a _ UH OERE Pac Tay tein TE +e, i ekbictency = 4oey, Pug value: from errr) vewe)= Vensiowr , OfWEET uot) =O mebeon Tv . Uy a Nevg = oe \ Nensinwt dot + Fo dur = 4 ven (psi), = = 3 q =04 Ret Value, ) RecN Born vay ~ Spr i ee oe atest de + Yotdet = flour one) Mic uae ae ( e 4 a 2M pacoy) Nei 7 SS Sueest Wh ;Pa. — ae “Vall wave ceckitier with filter Wek by connecting capadtor. We can ver Vipple of wave town. ‘¢ © For a thoment, tet us ascum — | diode is ideal. Now for He halt : td, whenever applied vollage is jwe, diode gets toward biased an} ack as a closed Switch. S timy, this, @pacttor gets charged to peak velbage _ Wen capacitor ie chawped to peak , aiod we biased cur anode and Cathdde Ae what time, diode atks as ot Copaciter Gets discoarged. 4 Th Root, we Vm. ® become has same Voltage Alosed awitch, Then, charg asumes ‘Capacitor gele Aiccharying Nneaaty. Then ayain, diode is fonoasd biased and thts ° Process 8 Tepeated, ” By properly selecking RC type tapadtoy » we tan feduce discharg; OF capadtes, an ako | tie An va Faas PRE oF ofp ware . iD ’ so with a neat cireuil- diagram and wave forme explain working of full wave tonidge rectiey and show thar vipple factor ic o4@. 15 fxplain full bridge rectifier utth and without filter, ph "np t by Pies | For inic, tranthovmes isn't requived. no oF diodes are Aovbled Ripple conlent ig More. Output Voltage & yower is abubled. the op is near He PINE fore 3 te +ve halk Cyde Di Pr ate dm forward toias the tuscent Flows , 4 P-D-RL- Da" 2 In —ve hak cycle, P3,Py We Wn Porward Blas, the current Viel= "4 BP ows 0 tte way, FO—D3- RL-Py —P Vek V> Vm Sinwt =Vmsing be Ac voltage +o rectibrey, ker wp 204 RL be diode resistance , toad resistance respectively. avg value: a Neg ay {Vervinwt dwt = veo Coogan)” 2 2m s = 0636 Vin ams value v ipsa rt z ‘ Yams = ("wm cintiot dub. ‘wath 12C0820E gua = eRe (wt sina ; . : = Wor ca) 3 Vem = YP 94104 Ven. Ut a J ee poues oulput : Tacs 2m, Vgc 22 fake. aay SL, “ ac = wher ag tel Poe = Tak 4 a De = Tah Q. = ee re AC powex input Teams = Ero Ve s | | PSC = Crema (re ree) = (FV 4 ae) % = Cac 3 O-81%8U Pac Eg SR (G2Y te Rutep etRicenty = s.07, ¢ Ripple factor: feak inverse voltage: PIV is double that of halt -wave yeckies, PIN = BNmax ecw PILTER . Ps De aaa | je quarlity of vipple removed, Pag rae is dependent on ¢ & RL. ‘ Duning ave spa cysle, Capacitey bate pis gels sharted. Upto peak voltage , thy hess:| ough Di,D2 diodes. Then, Dy ,D2 becomes a Yeverte piased. Then discharge of capacitoy takese place. then pr,D3 becomes forward biased in —ve halk cycle And Capacitey Mt charged again. This process a repeals.ceeereienee en ST - ; D) Explain detail fuu wave rectitiey With center appeal “vranstormer - Di 6 : ‘lesa <@ aI) Fe nt “ry ; 6 Lo i-ty—| Pr for ceoler taped transformey, tranthormer is Yequived. During +ve hath cycle, current Hows from 4p-p,-m-R,--y as Alode 0, becomes fons biased. During ve halt cycle, Givrent flows Troms *A-Dr-MRi“o as diode Dz become forutal 7 Lie ~ Lek Veven sinwt = Umsin® be AL voltage & reckiier lek we and eR be diode Vesistane and load yYesist respectively RG 010) aan ms se ~cycle , Dy forward biased Capacitor gets Charged upto fp Rar Peak volc= inc le Ard ‘be Capacitor ges discharged ac p, ic reverse biased AOU. — nas Biased , the capacitor eas. orairged agoin. perones. reverse ei because Cathodé and anode has Same’ VeHage. ste charge & nae yer THs vepeats =f WY 2) Ma Oefine vipple factor and derive expression for full wave yectifier Rippke factor ic measurement of efficiency of rectifier that adually fells how well a rectier can convert Ac i 0¢ volte > [Ge = ones bewhar ace reckiher drcuits for full wave tectifeation J Usseribe thar advantages and disadvantage. : rao xO 2 ° . RL 1 te 3 J N D + Ape # shianteg sea me, 1? Yohege 1s hsher, les Telpple al enieeee ten ae Pate 40H. The “ChFicioncy 16 Bh27% Sead uanta ge: ba ates ore diodes. tm for cantre apped and four fox eee cectse She *: PW is bigher, highs piv aiodes ae larger in ad toe much costiies. 2 a diode ges 4, 9 Specitiea Swit, Making diode fan be ted ioc Switch > Voltage is exceeded , the diode veverse biated S04B what i purpoce of xsing’ filter in rectifier -Cyeweits >, Compare AiHevences . oF vechher with and without Biter PD %} constrvet good power cupply which Gives pure pe o we need ty remove AC component fiom o/p of rectitieys 3 Cprlsuating pd). The ofp from these rectFiers auith 4 “pple Components, is fed 4 filter —eireui Creu ls lp fom filter ic pure De - , raat