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HLST - Chunking Sheets

The document describes the operation and characteristics of MOSFET transistors, including how applying different gate voltages affects current flow. It also discusses using MOSFETs in common configurations like common source, common gate, and common drain amplifiers. The voltage and current characteristics of these amplifier configurations are analyzed.

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0% found this document useful (0 votes)
25 views15 pages

HLST - Chunking Sheets

The document describes the operation and characteristics of MOSFET transistors, including how applying different gate voltages affects current flow. It also discusses using MOSFETs in common configurations like common source, common gate, and common drain amplifiers. The voltage and current characteristics of these amplifier configurations are analyzed.

Uploaded by

ptcdg2ky4m
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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MOS

Operation with Zero GateVoltage

two back to back diodes in series

pn junctions atand drain


between

no current willflow when Vds is applied R 10112

Creating a Channel Current Flow

Source and Drain gnu


Positive voltage Ugs applied

freipositive holes or pushed downward


carrier Depletion regionwithacceptor atoms n region
elections an attracted
Indeed n region forms a channel for current flow between
drain und Sour
NMOS
Position threshold voltage
for a sufficientamountofmobileekibous
Ut 0,3 1W
Vos Vz Von IQ Cox WLvor
Thedrain isalwayspositiverelativtothe

Con E EMI C KWL FI L.EE


Applying a smallVos

Vos is small so Ugs is still constant alongthechannel


with effective voltage Vor

unit Lmleugin CoxWvor IE


Electron
driftvelocity Mu EI Mn

in MrCox E WasV1 Uns

For smalluns thechannel behaves as a linear resistance


controlled
by Von and therefore by Vos
Gas penCox E vor ros
hansconcherkner
process paranuw

Ein penCox AN
Was Ux ros 8 is is
Eu tunCent WK AN
Operation as Uns is increased

at source Vos VetVon


at drain Von Vos Vos UttVor Uns

AsVos is increased thechannel becomes moretop


resistance increases
n E Vorvos vs
Ein Y Vor Eun uns
in Ein E IvesVt uns Vos

Operation
forUss Vor
channelpinch
off when VosreachesVor
channel depth decreases to 0
drain current saturates as highervoltagewon't have

an Kit
i Edi E Voi uns Vol
Vossat Vor Vos Vt
caratstill flows through depletion region

CMOS and PMOS

subthnshold operation
for vors Ut with small draincurrent
Current Voltage Characteristics

in Vos MOSFET as switch

ros.uae

in Vos MOSFET as am
Operated in saturation region
MOSFET thenoperates as a voltagecontrolledconstant currentsource
determined
byVos orVor ofUn
independent

is Eu E Was Val
in 1k E vor
FinikOutput Resistance
increasingVos does effect the channel further
pickoff point ismovingauch fromdein

Chanel lengthmodulation
1 Avos

is En E was Ver 1 100

VA mit Us VAL

rot 1 ElvasVal
ro D
7 wouldntNo
PMOS
Applying the MOSFET in Amp Design

Obtaining a Voltage Amp

Insaturation voltage controlled currentsource


transcondultane
amp
pass current through resistor toget a voltage

Vas input voltage Ro loadresistance Uno supply voltage

Vos Von isRo


VoltageTransfer Characteristic UTC

Vos Vt transistor
is outoff in 0 Vos V00
Saturation Vt CVas 2 Vos Vos Vt Vos decreases
Triode Vos decreases moreslowly

ABregionwithgreatest slope in Eu Ucs Vel

Vos Vor duRoVos Vt


Vosis Vt 124EUR57 VG Vosis uns Vos VaslisVt

Biasing for Liner Amp

DCvoltage Vos der point Q


Vos V00 InRoVcs Vt quiescentpoint

4 A signal is superimposed on Vos

Vos t Vos Vost

Vos t be obtained graphically


can
theshark thesegment of VonH
thegreat the linearity

The Small Signal Voltage Gain

4 for a small Vos Vos α Uns


Voltage
gain is theslopeofthetangent
Au Fülasvos
Au En Vers Vt Ro EnVorRo
1 The gain is negative 180 phaseshift
2 The gain is proportional to RoEnandVon
Decurrent 10 1 InVö Au
IAumen
IT as bla Von

UTCby Graphical Analysis

in KF uns Load hin

intersects
x axis at Uns V00
slope NRO
A Vos Vt outoff so
operation P
Q Vas Vas Vas Vos lamp
B SaturationtoTriode
C Vas Von inTrioderegion switch closed
withlowros
Small Signal Operation und Models

The DCBiasPaint
DCbias
45 Vos A duVoi vg 0

Vos VoD RoIo


Ensure saturation Vos Vor

TheSignal Carrot in theDrainTerminal


Vos Vos Vgs in Eu Vostrgs Vt

T.EE tEEEEtEEE
Lastcomponent represents nonlinear distortion
Redend
by keeping V9 small
Eng kn Vos Vt rgs
rgs k 2 Us Vt 2Vor
Then smallsignalcondition is satisfied in Ist id
with id kn Vcs Vt vgs
Transcondentance
gm Äs En Vos Vt EuVor

9m vorvos

TheVoltageCain
Vos VoD Roin
smallsignalcondition
Vos V00 RD Ist id
Vos Raid

drainvoltage
PL gmvg.ro vgs 2 Vos Vt
Vgs Vt VD VDD
Ar F gmRo Triode tutoff
Small Signal Equivalent Circuit Models

FET behaves as voltage controlled currentsource

it applied idealconstantdevoltage sources an short


circuted

assumes drincurrent in saturation is independent of drainvoltage


modelled with to
go II VA Fo knVö

Av Ei gm Rollo
Transconductance
Im

9m Ein
WL Vos Vt hi WhVor
large transconduckner device must be short and mich

9m 12TVWIVET

S fünotosdebia wat

9m v
threedesign parameters Wh Vor Io two canbechosen independently

The T Equivalent Circuit Model

knVor
Basic MOSFET Amp Configs
TheThreeBasicConfigs
Connecteach
ofthe terminals to thegud
CommonSource

S to go
between Gand
Vi gut
wo across Ro between Dundgud
Common Gak

G togo
Vi between sourceandgnu
Vo across Ro between Dundgud
Common Drain SaraFollower
to gru
between Gand
Vi gut
wo across Ra between S undgud
Charatenizing Amps

Signal Using
Rigofsignal sara GILG
internalresistente

loadresistanceRa

input resistance
Rin Vi RinfksigUsig

Opencircuitvoltagegain Avo Rao


outputresistance Ro Er forVi 0
lookingintoampoutput

output voltage Vo MIR Avovi


voltage gain Av AvoREM

overallvoltagegain Gu Eig Ri RigAvoRIEN


The CommonScarceAmp CS

Rin D Vi Usig

Vo 9mVgs rollRo just for disenh circuits

Avo gm rollRo 5 Avo gmRD

Ro rollRD 5 Ro RD

1 Theinput resistance isideallyinfinite


2 Theoutput resistance is moderatetohigh reducingRo would decreasegain
lowoutput resistance requires
a sourcefollowstage
3 Theopencircuitvoltagegain Avo is high bandwidth is limited though

OverallVoltage Cain Gu Av gm Rollkur


With Rin s D Vi Usig K 2Vor
Rawillbeparallel toDoand Ro

TheCommon SourceAmp with SaurerResistance


T Model preferred with source resistance inseries
with Ngm
Rin D Vi Vsig

Vgs Fis Vi 1 YmRs

Rs can controlthemagnitudeofUss no distortion

Vo i Ro mit i Ins Vi 19Ham

Avo GER 9779m

Voltagegain
fromsaletodrein
Ro Ro mit Ra Av ILE Gu
The CommonGakAmp CG
Rin fm lowinput res

Vo IRD mit i Ägm

Avo gmRo same as CSbut Vi is attenuated

Ro RD
Eig REIN Isis
v.inin EI Gv 254am
EHER
R s
The Common DrainAmp Follow
Source

seven attenuation of signal b


amp withunity gain c
largeinput resistance Ui 0,9Usig

Raincludes actualloadandotherresistances
rossRa canbe omitted

Rin α

Ar pffh Av 1

Ro Igm Vi 0

Rafugm
G Au
highinput resistance
Summary

1 The CSanfig is thebestsuited for realizingtheballofthegainrequired in an amp


Dependingon the magnitude ofthegainrequired either a singlestage or a cascade
of
two or threestages canbe used
2 Including a resistor Rs in the source lead of theCSstage provides a numberof
performance improvements at theexpanseof gain reduction
3 The lowinput resistance the CGamp makes it useful in highfree scenarios
of
especially combined with a CS circuit

4 The source follower finds application as a voltagebuffer for connecting a high resistant
source to a lowresistance load and astheoutputstage in a multistageamp whereits
purpose is toequiptheampwith a lowoutput resistance
Biasingin MOS Amp Circuits

byFixing Voand Connecting a Resistance


intheSource

Vo Vast Rss
It Vo Vos Io ismostly by RsandVG
determined

16 Vg Vcs Rs provides negative feedback tostabiliaEs


As VG is constant Vos needsto decrease as In increases
butthatmakes Fo decreaseagain Rt degenerationresistan
Power supply VoD
C
Vo through voltagedivider RonRoz
IG 0 Ron are large forlang Rin
Ro as largeas possible forhighgain butsmall
enoughfor signalswingandsaturation
d Capocitator blocks du and couples using
must behighenoughfor desired frequencies
e Twopoorer supplies Uss VG
Reforhigh input resistance
Using a Brain to GateFeedback
Resistor

Vas Vos VoD ROID VDD Was RDID

RG MR forces devoltageatgahtobeequaltodrain Fo 0
When Fo increases Vormust decreasewhich causes In to decrease

Constant Current Source


using a

RG MR forlogsRin
Ro forappropriatedevoltageallowingtheoutput signal
tosavingund keepingtransistor saturated
b Q1 drainshortedtogateoperatinginsaturation

Ion Edi Elvas Val mit 1 0


VoD V
Ines
Q2 Voss Voss
7
I Ins lwal.tw aIo 1kilEh vas K Ä
Discrete Circuit MOSAmps

TheBasicStructure

s MF for ac ground forfrequencies ofinterest to bypass outputresistanceof arrestsource


bypasscapacitor
Usingwith Rsig is decoupledfrom circuit through Can blocking de and AC isshortcircuited
couplingcapacitor
ifSignalsource isprovidingdepathtogud gahand source can be connected directly
s Can coupling capacitor for Ra Vo Vd

Rin RG MRI Gv RoFRsig 9m rollRDIIRz

TheCommon SourceAmp withSour Resistance

Gv Rofksig
11
Biasresistance Ro makes RinJinik
The CommonGakAmp The SourceFollower

DC AC are zero at gab so Gu Rotksig RIEHL


its commented directlyatgut
eliminating RG Mo RD as drain is signalgro
Coupling capacitators working similar Coupling capacitors
to CS circuit
essentially theshipped downversion

TheAmpFreyResponse
BW fix Ja BW da
war
GB AnBW

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