SS9015 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY, LOW NOISE AMPLIFIER
• Complement to SS9014 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25 Î)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
Î
Collector Dissipation PC 450 mW
Î
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25 Î)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO À
IC = -100 , IE =0 -50 V
À
Collector-Emitter Breakdown Voltage BVCEO IC = -1mA, IB =0 -45 V
Emitter-Base Breakdown Voltage BVEBO IE = -100 , IC =0 -5 V
Collector Cut-off Current ICBO VCB = -50V, IE =0 -50 nA
Emitter Cut-off Current IEBO VEB = -5V, IC =0 -50 nA
DC Current Gain hFE VCE = -5V, IC = -1mA 60 200 600
Collector-Base Saturation Voltage VCE (sat) IC = -100mA, IB = -5mA -0.2 -0.7
Base-Emitter Saturation Voltage VBE (sat) IC = -100mA, IB = -5mA -0.82 -1.0 V
Base-Emitter On Voltage VBE (on) VCE = -5V, IC = -2mA -0.6 -0.65 -0.75 V
Output Capacitance COB VCB = -10V, IE =0 4.5 7.0 pF
f=1MHz
Current Gain-Bandwidth Product fT VCE = -5V, IC = -10mA 100 190 MHz
Ï
Noise Figure NF VCE = -5V, IC = -0.2mA 0.7 10 dB
f=1KHz, RS=1
hFE CLASSIFICATION
Classification A B C
hFE 60-150 100-300 200-600
SS9015 PNP EPITAXIAL SILICON TRANSISTOR
