BC856S/U_BC857S
PNP Silicon AF Transistor Arrays
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated transistor
with good matching in one package
• BC856S / U, BC857S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC856S/U
BC857S
C1 B2 E2
6 5 4
TR2
TR1
1 2 3
E1 B1 C2
EHA07175
Type Marking Pin Configuration Package
BC856S 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BC856U 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
BC857S 3Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
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BC856S/U_BC857S
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO -
BC856S/U 65
BC857S 45
Collector-base voltage VCBO V
BC856S, BC856U 80
BC857S 50
Emitter-base voltage VEBO 5
Collector current IC 100 mA
Peak collector current, tp ≤ 10 ms ICM 200
Total power dissipation- Ptot -
TS ≤ 115 °C, BC856S 250
TS ≤ 118 °C, BC856U, BC857U 250
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS K/W
BC856S, BC857S ≤ 140
BC856U ≤ 130
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BC856S/U_BC857S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO -
IC = 10 mA, IB = 0 , BC856S/U 65 - -
IC = 10 mA, IB = 0 , BC857S 45 - -
Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IE = 0 , BC856S/U 80 - -
IC = 10 µA, IE = 0 , BC857S 50 - -
Emitter-base breakdown voltage V(BR)EBO 5 - - V
IE = 10 µA, IC = 0
Collector-base cutoff current ICBO µA
VCB = 45 V, IE = 0 - - 0.015
VCB = 45 V, IE = 0 , TA = 150 °C - - 5
DC current gain1) hFE -
IC = 10 µA, VCE = 5 V - 250 -
IC = 2 mA, VCE = 5 V 200 290 630
Collector-emitter saturation voltage1) VCEsat mV
IC = 10 mA, IB = 0.5 mA - 75 300
IC = 100 mA, IB = 5 mA - 250 650
Base emitter saturation voltage1) VBEsat -
IC = 10 mA, IB = 0.5 mA - 700 -
IC = 100 mA, IB = 5 mA - 850 -
Base-emitter voltage1) VBE(ON) mV
IC = 2 mA, VCE = 5 V 600 650 750
IC = 10 mA, VCE = 5 V - - 820
1Pulse test: t < 300µs; D < 2%
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BC856S/U_BC857S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency fT - 250 - MHz
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance Ccb - 1.5 - pF
VCB = 10 V, f = 1 MHz
Emitter-base capacitance Ceb - 8 -
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance h11e - 4.5 - kΩ
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio h12e - 2 - 10-4
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio h21e - 330 - -
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance h22e - 30 - µS
IC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figure F - - 10 dB
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ
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BC856S/U_BC857S
DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage
VCE = 5 V IC = ƒ(VCEsat ), hFE = 20
EHP00382 EHP00380
10 3 10 2
mA
h FE 5 100 C ΙC
25 C 100 C
25 C
-50 C -50 C
10 2 10 1
5 5
0
10 1 10
5 5
10 0 10 -1
10 -2 5 10 -1 5 10 0
5 10 1
mA 10 2 0 0.1 0.2 0.3 0.4 V 0.5
ΙC VCEsat
Base-emitter saturation voltage Collector cutoff current ICBO = ƒ(TA)
IC = ƒ(VBEsat), hFE = 20 VCBO = 30 V
EHP00379
10 2 10 4
EHP00381
mA nA
ΙC Ι CB0
100 C 10 3
25 C 5
1
-50C
10
max
10 2
5
5
typ
10 1
10 0 5
5 0
10
5
10 -1 10 -1
0 0.2 0.4 0.6 0.8 V 1.2 0 50 100 C 150
V BEsat TA
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BC856S/U_BC857S
Transition frequency fT = ƒ(IC) Collector-base capacitance Ccb = ƒ(VCB)
VCE = 5 V Emitter-base capacitance Ceb = ƒ(VEB)
EHP00378
10 3 12
pF
MHz
fT
5 10
CCB(CEB )
9
7
2
10 6
5
5 4
CEB
3
1 CCB
10 1 0
10 -1 5 10 0 5 10 1 mA 10 2 0 4 8 12 16 V 22
ΙC VCB(VEB
Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS)
BC856S, BC857S BC856U
300 300
mW mW
250 250
225 225
200 200
Ptot
Ptot
175 175
150 150
125 125
100 100
75 75
50 50
25 25
0 0
0 15 30 45 60 75 90 105 120 °C 150 0 15 30 45 60 75 90 105 120 °C 150
TS TS
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BC856S/U_BC857S
Permissible Pulse Load RthJS = ƒ(tp) Permissible Pulse Load
BC856S; BC857S Ptotmax/PtotDC = ƒ(tp )
BC856S, BC857S
3
10 10 3
K/W
-
Ptotmax/PtotDC
10 2
D=0
RthJS
10 2 0.005
0.01
0.02
10 1
0.05
0.5 0.1
0.2 0.2
0.1 0.5
0.05 10 1
0.02
10 0
0.01
0.005
D=0
10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp
Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load
BC856U Ptotmax/PtotDC = ƒ(tp )
BC856U
3
10 10 3
K/W
Ptotmax / PtotDC
D=0
10 2 0.005
0.01
0.02
RthJS
10 2
0.05
0.1
0.2
10 1 D=0.5 0.5
0.2
0.1
0.05
0.02 10 1
0.01
10 0 0.005
0
10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp
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Package SC74 BC856S/U_BC857S
Package Outline
2.9 ±0.2
B 1.1 MAX.
(2.25)
(0.35) 0.15 +0.1
-0.06
6 5 4
2.5 ±0.1
0.25 ±0.1
1.6 ±0.1
10˚ MAX.
10˚ MAX.
1 2 3
0.35 +0.1
-0.05 A
Pin 1 0.2 M B 6x 0.1 MAX.
marking 0.95
1.9 0.2 M A
Foot Print
0.5
2.9
1.9
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking BCW66H
Laser marking Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4 0.2
8
2.7
Pin 1 3.15 1.15
marking
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Package SOT363 BC856S/U_BC857S
Package Outline
2 ±0.2 0.9 ±0.1
+0.1 6x
0.2 -0.05 0.1 MAX.
0.1 M
0.1
A
6 5 4
1.25 ±0.1
2.1 ±0.1
0.1 MIN.
1 2 3
Pin 1
marking 0.65 0.65 0.15 +0.1
-0.05
0.2 M A
Foot Print
0.3
0.9 0.7
1.6
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking BCR108S
Laser marking Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4 0.2
8
2.3
Pin 1 2.15 1.1
marking
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BC856S/U_BC857S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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