SOT23 NPN SILICON PLANAR BC846 BC847

BC848 BC849
GENERAL PURPOSE TRANSISTORS BC850
ISSUE 6 - JANUARY 1997

PARTMARKING DETAILS COMPLEMENTARY TYPES

BC846A–Z1A BC848B–1K BC846 BC856
BC846B–1B BC848C–Z1L BC847 BC857 E
C
BC847A–Z1E BC849B–2B BC848 BC858
BC847B–1F BC849C–2C BC849 BC859
B
BC847C–1GZ BC850B–2FZ BC850 BC860
BC848A–1JZ BC850C-Z2G
SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT
Collector-Base Voltage VCBO 80 50 30 30 50 V
Collector-Emitter Voltage VCES 80 50 30 30 50 V
Collector-Emitter Voltage VCEO 65 45 30 30 45 V
Emitter-Base Voltage VEBO 6 5 V
Continuous Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Tj:Tstg -55 to +150 °C
Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Collector Cut-Off Current ICBO Max 15 nA VCB = 30V
Max 5 µA VCB = 30V
Tamb=150°C
Collector-Emitter VCE(sat) Typ 90 mV IC=10mA,
Saturation Voltage Max. 250 mV IB=0.5mA
Typ 200 mV IC=100mA,
Max. 600 mV IB=5mA
Typ 300 mV IC=10mA*
Max. 600 mV
Base-Emitter VBE(sat) Typ 700 mV IC=10mA,
Saturation Voltage IB=0.5mA
Typ 900 mV IC=100mA,
IB=5mA
Base-Emitter Voltage VBE Min 580 mV IC=2mA
Typ 660 mV VCE=5V
Max 700 mV
Max 770 mV IC=10mA
VCE=5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
 BC846 BC847 BC846 BC847
BC848 BC849 BC848 BC849
BC850 BC850
ELECTRICAL CHARACTERISTICS (Continued)
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Static Group VI hFE Min 75 75 75 – – IC=2mA, VCE=5V
Dynamic Group VI hie Min 0.4 0.4 0.4 – – kΩ
Forward Typ 110 110 110 – –
Characteristics Typ 1.2 1.2 1.2 – – kΩ Current Ratio Max 150 150 150 – –
Max 2.2 2.2 2.2 – – kΩ
Group A Group A hFE Typ 90 90 90 – – IC=0.01mA, VCE=5V
Min 1.6 1.6 1.6 – – kΩ
Typ 2.7 2.7 2.7 – – kΩ Min 110 110 110 – – IC=2mA, VCE=5V
Max 4.5 4.5 4.5 – – kΩ Typ 180 180 180 – –
Group B Max 220 220 220 – –
Min 3.2 kΩ
Typ 4.5 kΩ Typ 120 120 120 – – IC=100mA, VCE=5V
Group C Max 8.5 kΩ
Group B hFE Typ 150 IC=0.01mA, VCE=5V
Min – – 6 6 6 kΩ
Typ – – 8.7 8.7 8.7 kΩ Min 200 IC=2mA, VCE=5V
Max – – 15 15 15 Typ 290
kΩ
Max 450
Group VI hre Typ 2.5 2.5 2.5 – – x10-4 Typ 200 200 200 – – IC=100mA, VCE=5V
Group A Typ 1.5 1.5 1.5 – – x10-4
Group B Typ 2 2 2 2 2 x10-4 Group C hFE Typ. – 270 270 270 270 IC=0.01mA, VCE=5V
Group C Typ – – 3 3 3 x10-4 VCE=5V
Ic=2mA Min – 420 420 420 420 IC=2mA, VCE=5V
Group VI hfe Min 75 75 75 – – Typ – 500 500 500 500
Typ 110 110 110 – – Max – 800 800 800 800
Max 150 150 150 – –
Group A Typ – – 400 – – IC=100mA, VCE=5V
Min 125 125 125 – –
Typ 220 220 220 – – Transition Frequency fT Typ 300 MHz IC=10mA, VCE=5V
Max 260 260 260 – – f=100MHz
Group B
Min 240 Collector-Base Cobo Typ 2.5 pF VCB=10V f=1MHz
Typ 330 Capacitance Max 4.5 pF
Group C Max 500
Emitter-Base Cib0 Typ 9 pF VEB=0.5V f=1MHz
Min – 450 450 450 450 Capacitance
Typ – 600 600 600 600
Noise Figure N Typ 2 2 2 1.2 1 dB VCE = 5V, IC=200µA,
Max – 900 900 900 900
Max 10 10 10 4 4 dB RG=2kΩ, f=1kHz,
Group VI hoe Typ 20 20 20 – – µs ∆f=200Hz
Max 40 40 40 – – µs Typ – – – 1.2 1 dB VCE = 5V, IC=200µA,
Max – – – 4 3 dB RG=2kΩ, f=30Hz to
Group A Typ 18 18 18 – – µs
15kHz at -3dB
Max 30 30 30 – – µs
points
Group B Typ 30 µs Equivalent Noise en Max. – – – 110 110 nV VCE = 5V, IC=200µA,
Max 60 µs Voltage RG=2kΩ, f=10Hz to
50Hz at -3dB
Group C Typ – – 60 60 60 µs points
Max – – 110 110 110 µs

Spice parameter data is available upon request for this device

 BC846 BC847 BC846 BC847
BC848 BC849 BC848 BC849
BC850 BC850
ELECTRICAL CHARACTERISTICS (Continued)
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Static Group VI hFE Min 75 75 75 – – IC=2mA, VCE=5V
Dynamic Group VI hie Min 0.4 0.4 0.4 – – kΩ
Forward Typ 110 110 110 – –
Characteristics Typ 1.2 1.2 1.2 – – kΩ Current Ratio Max 150 150 150 – –
Max 2.2 2.2 2.2 – – kΩ
Group A Group A hFE Typ 90 90 90 – – IC=0.01mA, VCE=5V
Min 1.6 1.6 1.6 – – kΩ
Typ 2.7 2.7 2.7 – – kΩ Min 110 110 110 – – IC=2mA, VCE=5V
Max 4.5 4.5 4.5 – – kΩ Typ 180 180 180 – –
Group B Max 220 220 220 – –
Min 3.2 kΩ
Typ 4.5 kΩ Typ 120 120 120 – – IC=100mA, VCE=5V
Group C Max 8.5 kΩ
Group B hFE Typ 150 IC=0.01mA, VCE=5V
Min – – 6 6 6 kΩ
Typ – – 8.7 8.7 8.7 kΩ Min 200 IC=2mA, VCE=5V
Max – – 15 15 15 Typ 290
kΩ
Max 450
Group VI hre Typ 2.5 2.5 2.5 – – x10-4 Typ 200 200 200 – – IC=100mA, VCE=5V
Group A Typ 1.5 1.5 1.5 – – x10-4
Group B Typ 2 2 2 2 2 x10-4 Group C hFE Typ. – 270 270 270 270 IC=0.01mA, VCE=5V
Group C Typ – – 3 3 3 x10-4 VCE=5V
Ic=2mA Min – 420 420 420 420 IC=2mA, VCE=5V
Group VI hfe Min 75 75 75 – – Typ – 500 500 500 500
Typ 110 110 110 – – Max – 800 800 800 800
Max 150 150 150 – –
Group A Typ – – 400 – – IC=100mA, VCE=5V
Min 125 125 125 – –
Typ 220 220 220 – – Transition Frequency fT Typ 300 MHz IC=10mA, VCE=5V
Max 260 260 260 – – f=100MHz
Group B
Min 240 Collector-Base Cobo Typ 2.5 pF VCB=10V f=1MHz
Typ 330 Capacitance Max 4.5 pF
Group C Max 500
Emitter-Base Cib0 Typ 9 pF VEB=0.5V f=1MHz
Min – 450 450 450 450 Capacitance
Typ – 600 600 600 600
Noise Figure N Typ 2 2 2 1.2 1 dB VCE = 5V, IC=200µA,
Max – 900 900 900 900
Max 10 10 10 4 4 dB RG=2kΩ, f=1kHz,
Group VI hoe Typ 20 20 20 – – µs ∆f=200Hz
Max 40 40 40 – – µs Typ – – – 1.2 1 dB VCE = 5V, IC=200µA,
Max – – – 4 3 dB RG=2kΩ, f=30Hz to
Group A Typ 18 18 18 – – µs
15kHz at -3dB
Max 30 30 30 – – µs
points
Group B Typ 30 µs Equivalent Noise en Max. – – – 110 110 nV VCE = 5V, IC=200µA,
Max 60 µs Voltage RG=2kΩ, f=10Hz to
50Hz at -3dB
Group C Typ – – 60 60 60 µs points
Max – – 110 110 110 µs

Spice parameter data is available upon request for this device

This datasheet has been downloaded from:

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