BC846-8

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NP N )

Features SOT- 23
● Ideally suited for automatic insertion
● For Switching and AF Amplifier Applications

Marking:
● BC846A=1A;BC846B=1B;
● BC847A=1E;BC847B=1F;BC847C=1G;
● BC848A=1J;BC848B=1K;BC848C=1L;
C

B E

Item Symbol Unit Conditions Value

Collector-Base Voltage BC846 80

BC847 VCBO V 50
BC848 30

Collector-Emitter Voltage BC846 65

BC847 VCEO V 45
BC848 30

Emitter-Base Voltage VEBO V 6

Collector Current IC A -0.1

Total Device Dissipation PC W 0.2

Thermal Resistance From Junction To Ambient RΘJA ℃/W 625

Junction Temperature Tj ℃ 150

Storage Temperature TSTG ℃ -55 to +150

1
High Diode Semiconductor
Electrical Characteristics (TA=25℃ unless otherwise noted)

Parameter Symbol T est conditions Min Typ Max Unit

Collector-base breakdown voltage BC846 80
BC847 VCBO IC= 10µA, IE=0 50 V
BC848 30
Collector-emitter breakdown voltage BC846 65
BC847 VCEO IC= 10mA, IB=0 45 V
BC848 30
Emitter-base breakdown voltage VEBO IE= 10µA, IC=0 6 V
Collector cut-off current BC846 VCB=70 V , IE=0
BC847 ICBO VCB=50 V , IE=0 0.1 μA
BC848 VCB=30 V , IE=0
Collector cut-off current BC846 VCE=60 V , IB=0
BC847 ICEO VCE=45 V , IB=0 0.1 μA
BC848 VCE=30 V , IB=0
Emitter cut-off current IEBO VEB=5 V , IC=0 0.1 μA
DC current gain BC846A,847A,848A 110 220
BC846B,847B,848B hFE VCE= 5V, IC= 2mA 200 450
BC847C,BC848C 420 800
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V
VCE= 5 V, IC= 10mA
Transition frequency fT 100 MHz
f=100MHz
Collector output capacitance Cob VCB=10V,f=1MHz 4.5 pF

High Diode Semiconductor 2

Typical Characteristics
Static Characteristic hFE —— IC
10 3000
COMMON
EMITTER COMMON EMITTER
Ta=25℃ VCE= 5V
1000 Ta=100℃
(mA)

8
20uA

hFE
18uA
IC

DC CURRENT GAIN
6 16uA
COLLECTOR CURRENT

14uA Ta=25℃

12uA
4 100
10uA
8uA

2 6uA
4uA

IB=2uA
0 10
0 1 2 3 4 5 6 7 1 10 100
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VBEsat —— IC VCEsat —— IC
1000 500
β=20 β=20

COLLECTOR-EMITTER SATURATION
800
BASE-EMITTER SATURATION

VOLTAGE VCEsat (mV)

Ta=25℃
VOLTAGE VBEsat (mV)

Ta=100 ℃
100

600
Ta=25℃
Ta=100 ℃

400

200 10
0.1 1 10 100 0.1 1 10 100
COLLECTOR CURREMT IC (mA) COLLECTOR CURREMT IC (mA)

IC —— VBE fT —— IC
100 500
COMMON EMITTER
VCE=5V
(MHz)
(mA)

fT

10
IC

00℃

TRANSITION FREQUENCY

100
COLLECTOR CURRENT

5℃
T =1
a

T =2
a

COMMON EMITTER
VCE=5V
Ta=25℃
0.1 10
0.2 0.4 0.6 0.8 1.0 0.25 2 4 6 8 10 12
BASE-EMMITER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)

Cob/Cib —— VCB/VEB PC —— Ta
100 250

f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION

Ta=25 ℃ 200

Cib
(pF)

10
150
C

PC (mW)
CAPACITANCE

Cob
100

50

0.1 0
0.1 1 10 30 0 25 50 75 100 125 150
REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta (℃ )

High Diode Semiconductor 3

SOT-23 Package Outline Dimensions

SOT-23 Suggested Pad Layout

JSHD
JSHD

High Diode Semiconductor 4

Reel Taping Specifications For Surface Mount Devices-SOT-23

30

High Diode Semiconductor 5