NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
1. GATE
V(BR)DSS RDS(ON) ID 2. DRAIN
G
40V 25mΩ 32A 3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C 32
Continuous Drain Current ID
TC = 100 °C 20
1
A
Pulsed Drain Current IDM 70
Avalanche Current IAS 17
Avalanche Energy L = 0.3mH EAS 44 mJ
TC = 25 °C 41.6
Power Dissipation PD W
TC = 100 °C 16.6
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RθJc 3 °C / W
Junction-to-Ambient RθJA 75 °C / W
1
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.7 1.9 2.5
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 32V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30V, VGS = 0V, TC = 125 °C 10
1
On-State Drain Current ID(ON) VDS = 10V, VGS = 10V 70 A
Drain-Source On-State VGS = 5V, ID = 10A 27 45
1 RDS(ON) mΩ
Resistance VGS = 10V, ID = 12A 21 25
REV 1.5 Aug-06-2010
1
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free
1
Forward Transconductance gfs VDS = 10V, ID = 12A 18 S
DYNAMIC
Input Capacitance Ciss 760
Output Capacitance Coss VGS = 0V, VDS = 20V, f = 1MHz 165 pF
Reverse Transfer Capacitance Crss 110
2
Total Gate Charge Qg 16
2 VDS = 0.5V(BR)DSS, VGS = 10V,
Gate-Source Charge Qgs 2.5 nC
Gate-Drain Charge
2
Qgd ID = 12A 2.1
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 3 Ω
2
Turn-On Delay Time td(on) 2.1 4.2
2
Rise Time tr VDS = 20V, RL = 1Ω 7.2 14
nS
2
Turn-Off Delay Time td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 11.6 21.0
2
Fall Time tf 3.5 7.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 32 A
1
Forward Voltage VSD IF = 12A, VGS = 0V 1.2 V
Reverse Recovery Time trr 14.5 nS
IF = 5 A, dlF/dt = 100A / µS
Reverse Recovery Charge Qrr 7.2 nC
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.
REMARK: THE PRODUCT MARKED WITH “P2504BDG”, DATE CODE or LOT #
REV 1.5 Aug-06-2010
2
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T C = 125°C
10
Is - Reverse Drain Current(A)
25°C
1
0.1 -55°C
0.01
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Body Diode Forward Voltage(V)
REV 1.5 Aug-06-2010
3
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free
Safe Operating Area Single Pulse Maximun Power dissipation
100
600
500 SINGLE PULSE
˚ C/W
RθJC = 3˚
ID , Drain Current [A]
T C=25˚˚C
↓ 400
Operation in
100us
This Area is
Power(W)
10 Lim ited by
300
RDS(ON)
200
NOTE :
1.V GS= 10V
1m s
2.TC =25˚˚C 100
˚ C/W
3.RθJC = 3˚
10m s
4.Single Pulse
DC
1 0
1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS , Drain-Source Voltage [V] Sigle Puls e Tim e (s)
REV 1.5 Aug-06-2010
4
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free
REV 1.5 Aug-06-2010
5
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free
REV 1.5 Aug-06-2010
6
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free
REV 1.5 Aug-06-2010
7
