NIKO-SEM N- & P-Channel Enhancement Mode
P2503NPG
DIP-8
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY D1 D1 D2 D2
V(BR)DSS RDS(ON) ID
N-Channel 30 25mΩ 7A G : GATE
D : DRAIN
P-Channel -30 45mΩ -5A S : SOURCE
#1S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
TC = 25 °C 7 -5
Continuous Drain Current ID
TC = 70 °C 6 -4
1
A
Pulsed Drain Current IDM 20 -20
Avalanche Current IAS 18 -18
Avalanche Energy L = 0.1mH EAS 19 mJ
TC = 25 °C 2.5
Power Dissipation PD W
TC = 70 °C 1.6
Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RθJA 50 °C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS UNIT
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX
STATIC
VGS = 0V, ID = 250µA N-Ch 30
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250µA P-Ch -30
VDS = VGS, ID = 250µA V
N-Ch 1 1.5 2.5
Gate Threshold Voltage VGS(th)
P-Ch -1 -1.5 -2.5
VDS = VGS, ID = -250µA
REV 1.2
1 Feb-09-2010
NIKO-SEM N- & P-Channel Enhancement Mode
P2503NPG
DIP-8
Field Effect Transistor
Halogen-Free & Lead-Free
VDS = 0V, VGS = ±20V N-Ch ±100
Gate-Body Leakage IGSS nA
VDS = 0V, VGS = ±20V P-Ch ±100
VDS = 24V, VGS = 0V N-Ch 1
P-Ch -1
VDS = -24V, VGS = 0V
Zero Gate Voltage Drain Current IDSS µA
VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10
P-Ch -10
VDS = -20V, VGS = 0V, TJ = 55 °C
1
VDS = 5V, VGS = 10V N-Ch 20
On-State Drain Current ID(ON) A
P-Ch -20
VDS =-5V, VGS = -10V
VGS = 4.5V, ID = 6A N-Ch 25 37
P-Ch 58 80
VGS = -4.5V, ID = -4A
1
Drain-Source On-State Resistance RDS(ON) mΩ
VGS = 10V, ID = 7A N-Ch 18 25
P-Ch 34 45
VGS = -10V, ID = -5A
1 VDS = 5V, ID = 7A N-Ch 19
Forward Transconductance gfs S
P-Ch 11
VDS = -5V, ID = -5A
DYNAMIC
N-Ch 790
Input Capacitance Ciss
N-Channel P-Ch 690
VGS = 0V, VDS = 10V, f = 1MHz N-Ch 175
Output Capacitance Coss
P-Channel P-Ch 310 pF
VGS = 0V, VDS = -10V, f = 1MHz N-Ch 65
Reverse Transfer Capacitance Crss
P-Ch 75
N-Ch 2
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω
P-Ch 6.25
REV 1.2
2 Feb-09-2010
NIKO-SEM N- & P-Channel Enhancement Mode
P2503NPG
DIP-8
Field Effect Transistor
Halogen-Free & Lead-Free
2 N-Channel N-Ch 16
Total Gate Charge Qg
VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch 14
ID = 7A N-Ch 2.5
2
Gate-Source Charge Qgs
P-Channel P-Ch 2.2 nC
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 2.1
2
Gate-Drain Charge Qgd ID = -5A
P-Ch 1.9
2
N-Ch 2.2 4.4
Turn-On Delay Time td(on) N-Channel
P-Ch 6.7 13.4
VDD = 10V
2
N-Ch 7.5 15
Rise Time tr
ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Ch 9.7 19.4
2
N-Ch 11.8 21.3
Turn-Off Delay Time td(off) P-Channel nS
P-Ch 19.8 35.6
VDD = -10V
2
N-Ch 3.7 7.4
Fall Time tf
ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 12.3 22.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
N-Ch 1.3
Continuous Current IS
P-Ch -1.3
A
3
N-Ch 2.6
Pulsed Current ISM
P-Ch -2.6
IF = 7A, VGS = 0V N-Ch 1
1
Forward Voltage VSD V
P-Ch -1
IF = -5A, VGS = 0V
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2503NPG”, DATE CODE or LOT #
REV 1.2
3 Feb-09-2010
NIKO-SEM N- & P-Channel Enhancement Mode
P2503NPG
DIP-8
Field Effect Transistor
Halogen-Free & Lead-Free
N-CHANNEL
100
V GS = 0V
A
10
Is - Reverse Drain Current(A)
T = 125° C 25° C -55°C
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Body Diode Forward Voltage(V)
REV 1.2
4 Feb-09-2010
NIKO-SEM N- & P-Channel Enhancement Mode
P2503NPG
DIP-8
Field Effect Transistor
Halogen-Free & Lead-Free
100 500
Operation in This Area
is Lim ited by RDS(ON)
10 ↓ 100us 400 SINGLE PULSE
˚ C/W
RθJA = 50˚
TA=25˚ ˚C
300
1m s
1
10m s
200
100m s
1S
0.1 NOTE : 10S
1.V GS= 10V DC 100
2.TA=25˚˚C
˚ C/W
3.RθJA =50˚
4.Single Pulse
0
0.01
0.0001 0.001 0.01 0.1 1 10
0.1 1 10 100
REV 1.2
5 Feb-09-2010
NIKO-SEM N- & P-Channel Enhancement Mode
P2503NPG
DIP-8
Field Effect Transistor
Halogen-Free & Lead-Free
P-CHANNEL
100
V GS = 0V
A
10
Is - Reverse Drain Current(A)
T = 125° C 25° C -55°C
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Body Diode Forward Voltage(V)
REV 1.2
6 Feb-09-2010
NIKO-SEM N- & P-Channel Enhancement Mode
P2503NPG
DIP-8
Field Effect Transistor
Halogen-Free & Lead-Free
100 500
Operation in This Area
is Lim ited by RDS(ON)
10 ↓ 100us 400 SINGLE PULSE
˚ C/W
RθJA = 50˚
TA=25˚ ˚C
300
1m s
1
10ms
200
100m s
1S
0.1 NOTE : 10S
1.V GS = 10V DC 100
2.T A=25˚ ˚C
3.RθJA =50˚ ˚ C/W
4.Single Pulse
0
0.01
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
1.00E+01
1.00E+00
Duty Cycle=0.5
0.2
1.00E-01 0.1
Note
0.05
0.02
1.00E-02 0.01
1.Duty cycle, D= t1 / t2
2.RthJA = 50 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
single Pluse
1.00E-03
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
REV 1.2
7 Feb-09-2010
