NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
N-Channel 30 21m 7A G : GATE
D : DRAIN
P-Channel -30 35m -6A S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
TC = 25 °C 7 -6
Continuous Drain Current ID
TC = 70 °C 6 -5 A
1
Pulsed Drain Current IDM 28 -24
TC = 25 °C 2
Power Dissipation PD W
TC = 70 °C 1.3
Junction & Storage Temperature Range Tj, Tstg -55 to 150
1
°C
Lead Temperature ( /16” from case for 10 sec.) TL 275
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RθJA 62.5 °C / W
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS UNIT
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX
STATIC
VGS = 0V, ID = 250µA N-Ch 30
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250µA P-Ch -30
VDS = VGS, ID = 250µA V
N-Ch 0.8 1.5 2.5
Gate Threshold Voltage VGS(th)
P-Ch -0.8 -1.5 -2.5
VDS = VGS, ID = -250µA
1 MAY-21-2004
NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
VDS = 0V, VGS = ±20V N-Ch ±100
Gate-Body Leakage IGSS nA
VDS = 0V, VGS = ±20V P-Ch ±100
VDS = 24V, VGS = 0V N-Ch 1
P-Ch -1
VDS = -24V, VGS = 0V
Zero Gate Voltage Drain Current IDSS µA
VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10
P-Ch -10
VDS = -20V, VGS = 0V, TJ = 55 °C
1 VDS = 5V, VGS = 10V N-Ch 28
On-State Drain Current ID(ON) A
P-Ch -24
VDS =-5V, VGS = -10V
VGS = 4.5V, ID = 6A N-Ch 21 32
P-Ch 44 60
VGS = -4.5V, ID = -5A
1
Drain-Source On-State Resistance RDS(ON) m
VGS = 10V, ID = 7A N-Ch 14 21
P-Ch 28 35
VGS = -10V, ID = -6A
1 VDS = 10V, ID = 5A N-Ch 8
Forward Transconductance gfs S
P-Ch 7
VDS = -10V, ID = -5A
DYNAMIC
N-Ch 1700
Input Capacitance Ciss
N-Channel P-Ch 970
VGS = 0V, VDS = 10V, f = 1MHz N-Ch 380
Output Capacitance Coss
P-Channel P-Ch 370 pF
VGS = 0V, VDS = -10V, f = 1MHz N-Ch 260
Reverse Transfer Capacitance Crss
P-Ch 180
2 N-Channel N-Ch 40
Total Gate Charge Qg
VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch 28
ID = 6A N-Ch 28
2
Gate-Source Charge Qgs
P-Channel P-Ch 6 nC
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 12
2
Gate-Drain Charge Qgd ID = -5A
P-Ch 12
2 MAY-21-2004
NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
2
N-Ch 20
Turn-On Delay Time td(on) N-Channel
P-Ch 20
VDS = 15V
2
N-Ch 10
Rise Time tr
ID ≅ 1A, VGS = 10V, RGEN = 6 P-Ch 17
2
N-Ch 120
Turn-Off Delay Time td(off) P-Channel nS
P-Ch 160
VDS = -15V, RL = 1
2
N-Ch 35
Fall Time tf
ID ≅ -1A, VGS = -10V, RGEN = 6 P-Ch 75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
N-Ch 3
Continuous Current IS
P-Ch -3
A
3
N-Ch 6
Pulsed Current ISM
P-Ch -6
IF = 1A, VGS = 0V N-Ch 1
1
Forward Voltage VSD V
P-Ch -1
IF = -1A, VGS = 0V
IF = 5A, dlF/dt = 100A / µS N-Ch 15.5
Reverse Recovery Time trr nS
P-Ch 15.5
IF = -5A, dlF/dt = 100A / µS
N-Ch 7.9
Reverse Recovery Charge Qrr nC
P-Ch 7.9
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
1
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2103NVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
3 MAY-21-2004
NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
N-CHANNEL
4 MAY-21-2004
NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
5 MAY-21-2004
NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
P-CHANNEL
6 MAY-21-2004
NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
7 MAY-21-2004
NIKO-SEM N- & P-Channel Enhancement Mode
P2103NVG
SOP-8
Field Effect Transistor Lead-Free
SOIC-8 (D) MECHANICAL DATA
mm mm
Dimension Dimension
Min. Typ. Max. Min. Typ. Max.
A 4.8 4.9 5.0 H 0.5 0.715 0.83
B 3.8 3.9 4.0 I 0.18 0.254 0.25
C 5.8 6.0 6.2 J 0.22
D 0.38 0.445 0.51 K 0° 4° 8°
E 1.27 L
F 1.35 1.55 1.75 M
G 0.1 0.175 0.25 N
8 MAY-21-2004
