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DFP640
N-Channel MOSFET
Features 2.Drain
■ RDS(on) (Max 0.18 Ω )@VGS=10V BVDSS = 200V
■ Gate Charge (Typical 44nC)
■ Improved dv/dt Capability 1.Gate RDS(ON) = 0.18 ohm
■ High ruggedness
ID = 18A
■ 100% Avalanche Tested
3.Source

General Description TO-220

This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
The TO-220 pkg is well suited for DC-DC converter and S- 1 2
Correction in color-monitor system. 3

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain to Source Voltage 200 V
Continuous Drain Current(@TC = 25°C) 18 A
ID
Continuous Drain Current(@TC = 100°C) 11 A
IDM Drain Current Pulsed (Note 1) 72 A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ
EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
Total Power Dissipation(@TC = 25 °C) 135 W
PD
Derating Factor above 25 °C 1.11 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
Maximum Lead Temperature for soldering purpose,
TL 300 °C
1/8 from Case for 5 seconds.

Thermal Characteristics
Value
Symbol Parameter Units
Min. Typ. Max.
RθJC Thermal Resistance, Junction-to-Case - - 0.9 °C/W
RθCS Thermal Resistance, Case to Sink - 0.5 - °C/W
RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W
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March, 2005. Rev. 0. Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved.
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DFP640

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 200 - - V
Δ BVDSS/ Breakdown Voltage Temperature
ID = 250uA, referenced to 25 °C - 0.26 - V/°C
Δ TJ coefficient

VDS = 200V, VGS = 0V - - 1 uA

IDSS Drain-Source Leakage Current
VDS = 160V, TC = 125 °C - - 10 uA
Gate-Source Leakage, Forward VGS = 25V, VDS = 0V - - 100 nA
IGSS
Gate-source Leakage, Reverse VGS = -25V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V
Static Drain-Source On-state Resis-
RDS(ON) VGS =10 V, ID = 9A - 0.15 0.18 Ω
tance
Dynamic Characteristics
Ciss Input Capacitance - 1010 1300
Coss Output Capacitance - 190 240 pF
VGS =0 V, VDS =25V, f = 1MHz
Crss Reverse Transfer Capacitance - 80 110
Dynamic Characteristics
td(on) Turn-on Delay Time - 15 30
tr Rise Time VDD =100V, ID =18A, RG =25Ω - 80 150
ns
td(off) Turn-off Delay Time - 50 90
※ see fig. 13. (Note 4, 5)
tf Fall Time - 60 120
Qg Total Gate Charge - 44 55
Qgs Gate-Source Charge VDS =160V, VGS =10V, ID =18A - 10 - nC
Qgd Gate-Drain Charge(Miller Charge) ※ see fig. 12. (Note 4, 5) - 18 -

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Continuous Source Current Integral Reverse p-n Junction - - 18
Diode in the MOSFET A
ISM Pulsed Source Current - - 72
VSD Diode Forward Voltage IS =18A, VGS =0V - - 1.5 V
trr Reverse Recovery Time - 190 - ns
IS=18A, VGS=0V, dIF/dt=100A/us
Qrr Reverse Recovery Charge - 1.3 - uC

※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L =1mH, IAS =18A, VDD = 50V, RG = 50Ω , Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.

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DFP640

Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V 1
10
1 10

ID, Drain Current [A]

6.0 V
ID, Drain Current [A]

5.5 V
o
Bottom : 5.0 V 150 C
o
25 C

0 o
0 10 -55 C
10

※ Notes :
※ Notes : 1. VDS = 30V
1. 250µ s Pulse Test 2. 250µ s Pulse Test
2. TC = 25℃
-1
-1
10
10 2 4 6 8 10
-1 0 1
10 10 10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Fig 3. On Resistance Variation vs. Fig 4. On State Current vs.

Drain Current and Gate Voltage Allowable Case Temperature
0.4
Drain-Source On-Resistance [Ω ]

IDR, Reverse Drain Current [A]

0.3
1
10
VGS = 10V
RDS(ON),

0.2

0
10 150℃ 25℃
0.1 VGS = 20V
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0.0 10
-1

0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics

12
Ciss=Cgs+Cgd(Cds=shorted)
2500 Coss=Cds+Cgd VDS = 200V
VGS, Gate-Source Voltage [V]

Crss=Cgd
10
※ Notes : VDS = 125V
2000 Coss 1. VGS = 0V
Capacitance [pF]

2. f=1MHz VDS = 50V

8

1500

Ciss 6

1000
4

500
2
Crss ※ Note : ID = 9A
0
0 5 10 15 20 25 30 35 40 0
0 10 20 30 40 50
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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DFP640

Fig 7. Breakdown Voltage Variation Fig 8. On-Resistance Variation

vs. Junction Temperature vs. Junction Temperature
1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5
1.1
BVDSS, (Normalized)

RDS(on), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = 250 µ A 1. VGS = 10 V
2. ID = 9 A
0.0
0.8 -100 -50 0 50 100 150 200
-100 -50 0 50 100 150 200
o
o TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]

Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current
vs. Case Temperature

20
Operation in This Area
is Limited by R DS(on)
2
10
100 µs 15
ID' Drain Current [A]
ID, Drain Current [A]

1 ms
1
10
10 ms
10
DC

0
10 5
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
10
-1 0
0 1 2 3 25 50 75 100 125 150
10 10 10 10
o
VDS, Drain-Source Voltage [V] TC' Case Temperature [ C]

Fig 11. Transient Thermal Response Curve

0
10
Zθ JC(t), Thermal Response

D = 0 .5

※ N o te s :
0 .2 1 . Z θ JC(t) = 0 .9 0 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
-1 0 .1 3 . T JM - T C = P D M * Z θ JC(t)
10

0 .0 5

0 .0 2
0 .0 1
s in g le p u ls e

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

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DFP640

Fig. 12. Gate Charge Test Circuit & Waveforms

VGS
Same Type
12V 200nF 50KO as DUT Qg
300nF

VDS
VGS Qgs Qgd

DUT
1mA

Charge

Fig 13. Switching Time Test Circuit & Waveforms

RL VDS
VDS 90%

VDD
(0.5 rated VDS)

10%
10V Vin
RG DUT
Pulse td(on) tr td(off) tf
Generator ton toff

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
2
VDS VDD EAS = LL IAS
2 BVDSS - VDD
BVDSS
ID
IAS
RG
ID(t)
DUT VDS(t)
10V

tp Time

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DFP640

Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT
+

VDS

IS
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• IS controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

IS
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop

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DFP640

TO-220 Package Dimension

H
I L
D E

A
Ø

G M

J O
K

D IM E N S IO N A B C D E F G H

M in 6 .1 2 9 .0 0 1 2 .8 8 2 .7 0 1 .2 0 1 5 .1 2 2 .7 0 4 .3 0

mm Typ. 6 .3 2 9 .2 0 1 3 .0 8 2 .8 0 1 .3 0 1 5 .5 2 3 .0 0 4 .5 0

M ax 6 .5 2 9 .4 0 1 3 .2 8 2 .9 0 1 .4 0 1 5 .9 2 3 .3 0 4 .7 0

D IM E N S IO N I J K L M N O Ø

M in 1 .2 5 0 .4 5 2 .3 0 1 .4 2 2 .4 4 4 .8 8

mm Typ. 1 .3 0 0 .5 0 2 .4 0 9 .9 0 1 .5 2 2 .5 4 5 .0 8 3 .6 0

M ax 1 .4 0 0 .6 0 2 .5 0 1 .6 2 2 .6 4 5 .2 8

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