Wisdom Semiconductor WFW20N50

N-Channel MOSFET
Features { 2. Drain
Symbol
■ RDS(on) (Max 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 90nC) ●

■ Improved dv/dt Capability, High Ruggedness ◀ ▲

1. Gate{ ●
■ 100% Avalanche Tested ●

■ Maximum Junction Temperature Range (150°C)

{ 3. Source

General Description TO-247

This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
G DS

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain to Source Voltage 500 V
Continuous Drain Current(@TC = 25°C) 20 A
ID
Continuous Drain Current(@TC = 100°C) 13 A
IDM Drain Current Pulsed (Note 1) 80 A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1110 mJ
EAR Repetitive Avalanche Energy (Note 1) 25.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
Total Power Dissipation(@TC = 25 °C) 250 W
PD
Derating Factor above 25 °C 2.00 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
Maximum Lead Temperature for soldering purpose,
TL 300 °C
1/8 from Case for 5 seconds.

Thermal Characteristics
Value
Symbol Parameter Units
Min. Typ. Max.
RθJC Thermal Resistance, Junction-to-Case - - 0.50 °C/W
RθCS Thermal Resistance, Case to Sink - 0.24 - °C/W
RθJA Thermal Resistance, Junction-to-Ambient - - 40 °C/W

Copyright@Wisdom Semiconductor Inc., All rights reserved.

Free Datasheet http://www.datasheet4u.com/

WFW20N50

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 500 - - V
Δ BVDSS/ Breakdown Voltage Temperature
ID = 250uA, referenced to 25 °C - 0.6 - V/°C
Δ TJ coefficient

VDS = 500V, VGS = 0V - - 10 uA

IDSS Drain-Source Leakage Current
VDS = 400V, TC = 125 °C - - 100 uA
Gate-Source Leakage, Forward VGS = 30V, VDS = 0V - - 100 nA
IGSS
Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V
Static Drain-Source On-state Resis-
RDS(ON) VGS =10 V, ID = 10A - 0.21 0.26 Ω
tance
gfs Forward Transconductance VDS =50V , ID =10.0A - 15 - S
Dynamic Characteristics
Ciss Input Capacitance - 3350 -
Coss Output Capacitance - 490 - pF
VGS =0 V, VDS =25V, f = 1MHz
Crss Reverse Transfer Capacitance - 50 -
Dynamic Characteristics
td(on) Turn-on Delay Time - 60 -
tr Rise Time VDD =250V, ID =20.0A, RG =25Ω - 210 -
ns
td(off) Turn-off Delay Time - 170 -
(Note 4, 5)
tf Fall Time - 130 -
Qg Total Gate Charge - 90 -
VDS =400V, VGS =10V, ID =20.0A
Qgs Gate-Source Charge - 20 - nC
Qgd Gate-Drain Charge(Miller Charge) (Note 4, 5) - 42 -

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Continuous Source Current Integral Reverse p-n Junction - - 20
Diode in the MOSFET A
ISM Pulsed Source Current - - 80
VSD Diode Forward Voltage IS =20.0A, VGS =0V - - 1.4 V
trr Reverse Recovery Time - 370 - ns
IS=20.0A, VGS=0V, dIF/dt=100A/us
Qrr
※ NOTES Reverse Recovery Charge - 380 - nC
1. Repeativity rating : pulse width limited by junction temperature
2. L = 5.0mH, IAS =20.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 20.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.

Copyright@Wisdom Semiconductor Inc., All rights reserved.

Free Datasheet http://www.datasheet4u.com/

Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V

ID , Drain Current [A]

6.0 V 1
1 Bottom : 5.5 V 10
ID, Drain Current [A]

10

150℃

25℃
0
10
0
10
-55℃ ※ Notes :
※ Notes :
1. 250µs Pulse Test 1. VDS = 50V
2. TC = 25℃ 2. 250µ s Pulse Test

-1
10
0 2 4 6 8 10
-1 0 1
10 10 10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.0
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.8

VGS = 10V 1
10
RDS(ON) [Ω ],

0.6
VGS = 20V

0.4
0
10
150℃ 25℃
0.2 ※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µ s Pulse Test

-1
0.0 10
0 10 20 30 40 50 60 70 80 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

7000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
6000 Crss = Cgd VDS = 100V
10
VGS, Gate-Source Voltage [V]

VDS = 250V
5000 Ciss VDS = 400V
8
Capacitance [pF]

4000 Coss
6
3000

4
2000 ※ Notes :
Crss 1. VGS = 0 V
2. f = 1 MHz
2
1000
※ Note : ID = 20 A

0 0
10
-1
10
0
10
1 0 10 20 30 40 50 60 70 80 90 100

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Free Datasheet http://www.datasheet4u.com/

Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 µA 0.5
1. VGS = 10 V
2. ID = 10.0 A

0.8 0.0
-100 -50 0 50 100 150 200
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

20

Operation in This Area

2
is Limited by R DS(on)
10
16
10 µs
ID, Drain Current [A]

ID, Drain Current [A]

100 µs
1 ms 12
1
10 10 ms
DC
8

0
10
※ Notes :
o 4
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 3
10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

0
10
Zθ JC(t), Thermal Response

D = 0 .5
※ N o te s :
1 . Z θ J C( t) = 0 .5 0 ℃ /W M a x .
-1 0 .2 2 . D u ty F a c to r , D = t 1 /t 2
10
3 . T J M - T C = P D M * Z θ J C( t)
0 .1

0 .0 5
PDM
0 .0 2 t1
0 .0 1 t2
10
-2 s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

Free Datasheet http://www.datasheet4u.com/

 Gate Charge Test Circuit & Waveform

VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Q Q
gs gd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
t
d(o
n) t
r t
d(o
ff) t
f
to
n to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 B V DS S
V E
AS=---- L S -
IA2 -
------------------
DS 2 B V DS S -V DD

B
VDSS
ID
IA
S

R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)
tp
tp T
ime

Free Datasheet http://www.datasheet4u.com/

 Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

V DS

I SD
L

D r iv e r
R G
S am e T ype
as DUT V DD

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id t h
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )

I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t

V SD
V DD

B o d y D io d e
F o r w a r d V o lt a g e D r o p

Free Datasheet http://www.datasheet4u.

Package Dimensions

TO-247
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Free Datasheet http://www.datasheet4u.com/