PD - 9.

1278C

IRF1010N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.011Ω
l Fully Avalanche Rated
G
ID = 84A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A
IDM Pulsed Drain Current  290
PD @TC = 25°C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 360 mJ
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.90
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

8/25/97
IRF1010N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, I D = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.011 Ω VGS = 10V, I D = 43A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS , ID = 250µA
gfs Forward Transconductance 30 ––– ––– S V DS = 25V, ID = 43A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 130 I D = 43A
Q gs Gate-to-Source Charge ––– ––– 23 nC VDS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 53 V GS = 10V, See Fig. 6 and 13 „
t d(on) Turn-On Delay Time ––– 11 ––– VDD = 28V
tr Rise Time ––– 66 ––– I D = 43A
ns
t d(off) Turn-Off Delay Time ––– 40 ––– R G = 3.6Ω
tf Fall Time ––– 46 ––– RD = 0.62Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 2900 ––– VGS = 0V

Coss Output Capacitance ––– 880 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 84
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– ––– 290

(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V „

t rr Reverse Recovery Time ––– 81 120 ns TJ = 25°C, IF = 43A
Q rr Reverse Recovery Charge ––– 240 370 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 470µH Caculated continuous current based on maximum allowable
R G = 25Ω, IAS = 43A. (See Figure 12) junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
ƒ ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
 IRF1010N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D ra in -to -S o u rce C u rre n t (A )

I , D ra in -to -S o u rc e C u rre n t (A )
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTT OM 4.5V BOTT OM 4.5V

100 100

4 .5V

D
D

4.5 V 2 0µ s PU LSE W ID TH 20 µs P UL SE W IDTH

TC = 2 5°C TC = 17 5°C
10 A 10 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = 72 A
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
I D , D r ain- to-S ourc e C urre nt (A )

2.5

TJ = 2 5 ° C
100 TJ = 1 7 5 ° C 2.0
(N o rm a liz e d )

1.5

10 1.0

0.5

V DS = 2 5 V
2 0 µ s P U L SE W ID TH V G S = 10 V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF1010N
5000 20
V GS = 0 V, f = 1M H z I D = 4 3A
C is s = C gs + C gd , Cds SH O RTE D V DS = 4 4V

V G S , G a te -to -S o u rc e V o lta g e (V )
C rs s = C gd V DS = 2 8V
4000 C is s C o ss = C ds + C g d 16
C , C a p a cita n ce (p F )

3000 C os s 12

2000 8

C rs s
1000 4

FO R TES T C IR CU IT
SEE FIG U R E 13
0 A 0 A
1 10 100 0 20 40 60 80 100 120 140
V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e ve rs e D ra in C u rre n t (A )

10µ s
I D , D ra in C u rre n t (A )

100

100µ s
100
TJ = 17 5°C

T J = 25°C 1m s
10

10m s

T C = 25 °C
T J = 17 5°C
V G S = 0V S ing le Pulse
10 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 10 100
V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF1010N
RD
VDS
100
VGS
LIMITED BY PACKAGE D.U.T.
RG
+
80 -VDD
ID , Drain Current (A)

10V
60 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

40
Fig 10a. Switching Time Test Circuit

VDS
90%
20

0
25 50 75 100 125 150 175 10%
TC , Case Temperature ( ° C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

D = 0.50
(Z thJC )

0.20
Thermal Response

0.10
0.1

0.05 PDM

0.02 SINGLE PULSE t1

0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF1010N

1000
ID

E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
1 5V
TO P 1 8A
31A
800 BO TTOM 43 A
L D R IV E R
VDS

600
RG D .U .T +
V
- DD
IA S A
20V
tp 0 .0 1 Ω 400

Fig 12a. Unclamped Inductive Test Circuit

200

V (BR )D SS
V D D = 2 5V
tp 0 A
25 50 75 100 125 150 175
Starting TJ , Junction T emperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF1010N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRF1010N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
2 . 8 7 ( .1 1 3 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
2 . 6 2 ( .1 0 3 ) 4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E X PLE
E X AM AM PL: ET:HITSH IS A
I SN AIRF
N IR F1 010
1010
W ITWHITAHS SAESMB
S E LY
MB LY A A
LO TL OT CO D9B
CO DE E 1M9 B1M I NT
IN TE E RN
R NA A TIO
T ION A LN AL P ARNU
P A RT T M
NUBEMRBE R
R ECRTEIF
C IER
TIF IE R
IR F IRF
101010 10
LOG O
LO GO 9246
9246
9B 9B1M 1 M D A TE
D A TE C ODCEOD E
A S SAEM
SS BE LY
MB LY (Y YW
(Y YW W ) W)
LO TLOTCO DE C OD E
Y Y Y=Y YE
= AYE
R AR
W WW =W W= EW EKEE K

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97