PD 9.

1309B

PRELIMINARY
IRF3710
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = 100V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.025Ω
l Fully Avalanche Rated G

Description ID = 49A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current  180
PD @TC = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 530 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.0
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

7/15/97
IRF3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.025 Ω VGS = 10V, ID = 28A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, I D = 250µA
gfs Forward Transconductance 20 ––– ––– S VDS = 25V, ID = 28A
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 190 ID = 28A
Q gs Gate-to-Source Charge ––– ––– 26 nC VDS = 80V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 82 V GS = 1.7V, See Fig. 6 and 13 „
t d(on) Turn-On Delay Time ––– 14 ––– VDD = 50V
tr Rise Time ––– 59 ––– ID = 28A
ns
t d(off) Turn-Off Delay Time ––– 58 ––– RG = 2.5Ω
tf Fall Time ––– 48 ––– RD = 1.7Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 3000 ––– VGS = 0V

Coss Output Capacitance ––– 640 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 49
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 180

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „
t rr Reverse Recovery Time ––– 210 320 ns TJ = 25°C, IF = 28A
Q rr Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs „
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ I SD ≤ 28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS ,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
‚ Starting TJ = 25°C, L = 1.4mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 28A. (See Figure 12)
 IRF3710

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V

I , D ra in -to -S o u rce C u rre n t (A )

I , D ra in -to -S o u rc e C u rre n t (A )

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTT OM 4.5V BOTT OM 4.5V

100 100

4.5 V
10 4 .5V 10

D
D

2 0µ s PU LSE W ID TH 20 µs P UL SE W IDTH
TC = 2 5°C TC = 17 5°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = 46 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D r ain- to-S ourc e C urre nt (A )

2.5

TJ = 2 5 ° C
100 2.0
T J = 1 7 5 °C
(N o rm a li ze d )

1.5

10 1.0

0.5

VD S = 5 0 V
2 0 µ s PU L SE W ID TH V G S = 10 V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF3710

6000 20
V GS = 0 V, f = 1M H z I D = 28 A
C is s = C gs + C gd , Cds SH O RTE D V D S = 80 V

V G S , G a te -to -S o u rc e V o lta g e (V )
C rs s = C gd V D S = 50 V
5000
C o ss = C ds + C g d 16 V D S = 20 V
C is s
C , C a p a c ita n c e (p F )

4000
12

3000

C os s 8
2000

C rs s 4
1000

FO R TEST C IRC U IT
SEE FIG UR E 13
0 A 0 A
1 10 100 0 40 80 120 160 200
V D S , Drain-to-Source V oltage (V) Q G , T otal G ate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e v e rse D ra in C u rre n t (A )

I D , D ra in C u rre n t (A )

1 0µs
100 100

T J = 17 5°C 1 00µ s

T J = 25 °C
10 10 1m s

10m s
T C = 25 °C
T J = 17 5°C
VG S = 0 V S ing le Pulse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100 1000
V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF3710

50 RD
VDS

VGS
40
D.U.T.
RG
+
I D , Drain Current (A)

- VDD

30 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

20
Fig 10a. Switching Time Test Circuit

10 VDS
90%

0
25 50 75 100 125 150 175
T C , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

0.50

0.20
P DM
0.10
0.1
t1
0.05
t2
0.02
0.01 SINGLE PULSE Notes:
(THERMAL RESPONSE) 1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF3710

1200
ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
TO P 1 1A
20A
15 V 1000
BO TTOM 28 A

800
L D R IV E R
VDS

600
RG D .U .T +
V
- DD
IA S A
20V 400
tp 0 .0 1 Ω

Fig 12a. Unclamped Inductive Test Circuit 200

V D D = 2 5V
0 A
25 50 75 100 125 150 175

V (BR )D SS Starting TJ , Junction T emperature (°C)

tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
QGS QGD D.U.T. - DS

VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF3710

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRF3710
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)

1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
2 . 8 7 ( .1 1 3 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
2 . 6 2 ( .1 0 3 ) 4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E XPLE
E X AM AM PLE
: T:HI TSHIISS AISN AIRF
N 1010
IRF 1010
W ITWH ITAHS SAESMB
S ELY
MB LY A A
LO TLOCO T DE
CO DE 9B 1M
9B 1M INRTE
IN TE NARTNAIONT ION
AL AL P A RT
P A RT NU
NU M BEMRBE R
R ECRTEC T IF IER
IF IER IR F IR F 1010
1010
LO GOLO GO 9246
9246
9B 9B1M 1M D A TE
D A TE C ODCEOD E
A S SAEM
S SBEMLYB LY (Y YW
(Y YW W) W)
LO TLO TCO DE CO DE
Y Y Y=Y YE
= AYE
R AR
W W = W EW
W W = EKE EK

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http://www.irf.com/ Data and specifications subject to change without notice. 7/97