PD - 95580

IRL3714PbF
SMPS MOSFET IRL3714SPbF
Applications
IRL3714LPbF
l High Frequency Isolated DC-DC HEXFET® Power MOSFET
Converters with Synchronous Rectification
for Telecom and Industrial Use VDSS RDS(on) max ID
l High Frequency Buck Converters for 20V 20mΩ 36A
Computer Processor Power
l Lead-Free

Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
TO-220AB D2Pak TO-262
and Current IRL3714 IRL3714S IRL3714L

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 31 A
I DM Pulsed Drain Current 140
PD @TC = 25°C Maximum Power Dissipation ƒ 47 W
PD @TC = 70°C Maximum Power Dissipation ƒ 33 W
Linear Derating Factor 0.31 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.2
RθCS Case-to-Sink, Flat, Greased Surface „ 0.50 ––– °C/W
RθJA Junction-to-Ambient„ ––– 62
RθJA Junction-to-Ambient (PCB mount) ––– 40

Notes  through † are on page 11

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IRL3714/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 15 20 VGS = 10V, ID = 18A ƒ
mΩ
––– 21 28 VGS = 4.5V, ID = 14A ƒ
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 VDS = 16V, VGS = 0V
µA
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 ––– ––– S VDS = 10V, ID = 14A
Qg Total Gate Charge ––– 6.5 9.7 ID = 14A
Qgs Gate-to-Source Charge ––– 1.8 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.9 ––– VGS = 4.5V
Qoss Output Gate Charge ––– 7.1 ––– VGS = 0V, VDS = 10V
td(on) Turn-On Delay Time ––– 8.7 ––– VDD = 10V
tr Rise Time ––– 78 ––– ID = 14A
ns
td(off) Turn-Off Delay Time ––– 10 ––– RG = 1.8Ω
tf Fall Time ––– 4.5 ––– VGS = 4.5V ƒ
Ciss Input Capacitance ––– 670 ––– VGS = 0V
Coss Output Capacitance ––– 470 ––– VDS = 10V
Crss Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 72 mJ
IAR Avalanche Current ––– 14 A

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– 36
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– 140
(Body Diode)  p-n junction diode. S

––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V ƒ

VSD Diode Forward Voltage
––– 0.88 ––– TJ = 125°C, IS = 18A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 18A, VR=10V
Q rr Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs ƒ
trr Reverse Recovery Time ––– 35 53 ns TJ = 125°C, IF = 18A, VR=10V
Q rr Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs ƒ
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10000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
1000 4.5V 4.5V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

3.0V 3.0V
2.7V 100 2.7V
2.5V 2.5V
100 2.2V 2.2V
BOTTOM 2.0V BOTTOM 2.0V

10 10

1
2.0V
1
2.0V
0.1
20µs PULSE WIDTH 20µs PULSE WIDTH
Tj = 25°C Tj = 175°C
0.01 0.1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00 2.5
I D = 36A
ID, Drain-to-Source Current (Α)

2.0
RDS(on) , Drain-to-Source On Resistance

T J = 25°C
100.00
(Normalized)

TJ = 175°C 1.5

1.0
10.00

0.5

VDS = 15V
20µs PULSE WIDTH V GS = 10V
1.00 0.0
2.0 4.0 6.0 8.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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IRL3714/S/LPbF

10000 15
VGS = 0V, f = 1 MHZ ID = 14
VDS = 16V
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 10V
Crss = Cgd
12
Coss = Cds + Cgd

VGS , Gate-to-Source Voltage (V)

C, Capacitance(pF)

1000
Ciss 9
Coss

100
Crss

10 0
0 4 8 12 16 20
1 10 100
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.00 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100.00 T J = 175°C 100

100µsec

10.00 10
1msec

T J = 25°C
1.00 1 10msec
Tc = 25°C
VGS = 0V Tj = 175°C
Single Pulse
0.10 0.1
0.0 1.0 2.0 3.0 1 10 100
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRL3714/S/LPbF

40 RD
V DS

V GS
D.U.T.
RG
30 +
-V DD
I D , Drain Current (A)

4.5V
Pulse Width ≤ 1 µs
20 Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

10 VDS
90%

0
25 50 75 100 125 150 175
10%
TC , Case Temperature ( °C)
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
(Z thJC)

D = 0.50

1
0.20

0.10
Thermal Response

0.05
SINGLE PULSE
0.02 (THERMAL RESPONSE) P DM
0.01
0.1
t1

t2

Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRL3714/S/LPbF

150
15V ID
TOP 5.9A
10A
120 BOTTOM 14A
L DRIVER
VDS

E AS , Single Pulse Avalanche Energy (mJ)

RG D.U.T 90
+
V
- DD
IAS A
20V
tp 0.01Ω
60

Fig 12a. Unclamped Inductive Test Circuit

30

V(BR)DSS
tp
0
25 50 75 100 125 150 175

Starting T , Junction
J Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

I AS Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50KΩ

4.5 V 12V .2µF

.3µF
QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRL3714/S/LPbF
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. V DD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRL3714/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET IGBTs, CoPACK
1 - GATE
1 2 3 2 - DRAIN
1- GATE 1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPL E : T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL P AR T NU MB E R
IN T HE AS S E MB L Y L INE "C" RE CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

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 IRL3714/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

T HIS IS AN IR F530S WITH PAR T NUMB ER
LOT CODE 8024 INT E RNATIONAL
AS S E MBL ED ON WW 02, 2000 RE CT IF IER F 530S
IN T HE AS S EMB LY LINE "L " LOGO
DAT E CODE
Note: "P" in as s embly line YEAR 0 = 2000
pos ition indicates "L ead-F ree" AS S EMBL Y
L OT CODE WEE K 02
L INE L

OR
PART NUMB ER
INT ERNAT IONAL
RECT IF IE R F 530S
L OGO
DAT E CODE
P = DES IGNAT ES L EAD-F REE
AS S E MB LY PRODUCT (OPT IONAL)
LOT CODE YEAR 0 = 2000
WEEK 02
A = AS S EMB LY S IT E CODE

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IRL3714/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

E XAMPLE : T HIS IS AN IRL 3103L
LOT CODE 1789 PART NUMB ER
INT ERNAT IONAL
AS S E MB LE D ON WW 19, 1997
RE CT IF IE R
IN T HE AS S E MBL Y L INE "C" L OGO
Note: "P" in as s embly line DAT E CODE
pos ition indicates "Lead-Free" YEAR 7 = 1997
AS S E MBL Y
L OT CODE WE EK 19
L INE C

OR
PART NUMB ER
INT E RNAT IONAL
RE CT IF IE R
L OGO
DAT E CODE
P = DE S IGNAT ES LE AD-F REE
AS S E MBL Y PRODUCT (OPT IONAL)
L OT CODE YEAR 7 = 1997
WE EK 19
A = AS S E MBL Y S IT E CODE

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D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
„ This is only applied to TO-220AB package
‚ Starting TJ = 25°C, L = 0.69 mH
RG = 25Ω, I AS = 14A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

These products have been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/