2N60 Series

N-CHANNEL POWER MOSFET

Features
● RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A
● Fast switching capability
● Lead free in compliance with EU RoHS directive.
● Improved dv/dt capability, high ruggedness

Pin Definition:
1. Gate
Mechanical Data 2. Drain
3. Source
● Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package

Ordering Information
Part No. Package Packing
2N60P TO-251 75pcs / Tube Block Diagram
2N60D TO-252 75pcs / Tube D

2N60T TO-220 50pcs / Tube

2N60F ITO-220 50pcs / Tube
2N60K TO-262 50pcs / Tube G
2N60G TO-263 50pcs / Tube
S

Maximum Ratings TA = 25C unless otherwise specified

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 2.0 A
Continuous Drain Current ID 2.0 A
Pulsed Drain Current (Note 2) IDM 8.0 A

Avalanche Energy Single Pulsed (Note 3) EAS 115 mJ

TO-220/TO-262/TO-263 44 W

Power Dissipation ITO-220 PD 23 W

TO-251/TO-252 34 W

Junction Temperature TJ +150 °C

Operating Temperature TOPR -55 ~ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220/ITO-220 62.5
Junction to Ambient TO-262/TO-263 θJA °C/W
TO-251/ TO-252 110
TO-220/ITO-220
TO-262/TO-263 2.35

Junction to Case ITO-220 θJC 5.5 °C/W

TO-251/ TO-252 2.9

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V

Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA

Forward VGS = 30V, VDS = 0V 100 nA

Gate-Source Leakage Current IGSS
Reverse
e VGS = -30V, VDS = 0V -100 nA

ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 4 4.4 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 300 - pF
VDS = 25V, VGS = 0V,
Output Capacitance COSS 45 - pF
f = 1MHz
Reverse Transfer Capacitance CRSS 2 - pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 10 - ns
Turn-On Rise Time tR VDD =300V, ID =2A, 25 - ns
Turn-Off Delay Time tD(OFF) RG=25Ω (Note 1, 2) 20 - ns
Turn-Off Fall Time tF 25 - ns
Total Gate Charge QG 5.7 - nC
VDS= 480V,ID= 2.4A, -
Gate-Source Charge QGS 1.8 nC
VGS= 10V (Note 1, 2)
Gate-Drain Charge QGD 2 - nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V
Maximum Continuous Drain-Source Diode
IS 2.0 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 8.0 A
Forward Current
Reverse Recovery Time trr VGS = 0 V, IS = 2A, 357 ns
Reverse Recovery Charge QRR dIF/dt = 100 A/μs (Note 1) 2 μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2.. Essentially independent of operating temperature
TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * SD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms
TEST CIRCUITS AND WAVEFORMS(Cont.)

Switching Test Circuit Switching Waveforms

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 300

250 250
Drain Current, ID (µA)

Drain Current, ID (µA)

200 200

150 150

100 100

50 50

0 0
0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 3.5 4
Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, VTH (V)
Continuous Drain-Source Current, ISD (A)
Drain Current, ID (A)
TO-220 Mechanical Drawing

ITO-220 Mechanical Drawing

TO-262 Mechanical Drawing

TO-263 Mechanical Drawing

TO-251 Mechanical Drawing

TO-252 Mechanical Drawing