SLW9N90C

900V N-Channel MOSFET

General Description Features

This Power MOSFET is produced using SL semi‘s • 9.0A, 900V, RDS(on) = 1.40Ω @VGS = 10 V
advanced planar stripe DMOS technology. • Low gate charge ( typical 45nC)
This advanced technology has been espe cially tailored to • High ruggedness
minimize o n-state r esistance, pr ovide superior switching • Fast witching
s
performance, and withstand high ener gy pulse in the • 100% avalanche tested
avalanche and commutation mode. These devices are well • Improved dv/dt capability
suited for high efficiency sw itched mode power supp lies,
active power factor corr ection based on half br idge
topology.

Absolute Maximum Ratings TC = 25°Cunless otherwise noted

Symbol Parameter SLW9N90C Units

VDSS Drain-Source Voltage 900 V
ID Drain Current - Continuous (TC = 25°C) 9.0 A
- Continuous (TC = 100°C) 5.7 A
IDM Drain Current - Pulsed (Note 1) 36 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ
EAR Repetitive Avalanche Energy (Note 1) 28 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25°C) 280 W
- Derate above 25°C 2.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter TYP MAX Units
RθJC Thermal Resistance, Junction-to-Case - 0.45 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.24 - °C/W
RθJA Thermal Resistance, Junction-to-Ambient - 40 °C/W
SLW9N90C
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.99 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 900 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 720 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 4.5A -- 1.05 1.40 Ω
On-Resistance

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2200 -- pF
Coss Output Capacitance f = 1.0 MHz -- 180 -- pF
Crss Reverse Transfer Capacitance -- 15 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 50 -- ns
VDD = 450 V, ID = 9.0A,
tr Turn-On Rise Time -- 120 -- ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 100 -- ns
(Note 4, 5)
tf Turn-Off Fall Time -- 80 -- ns
Qg Total Gate Charge VDS = 720 V, ID = 9.0A, -- 45 - nC
Qgs Gate-Source Charge VGS = 10 V -- 14 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 18 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 9.0 A, -- 550 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 6.5 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.0mH, IAS = 9.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typical Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature

Figure 11. Transient Thermal Response Curve

 Gate Charge Test Circuit & Waveform

VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
td tr td
(on
) (off) tf
to
n
to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L B V
1 DS S
V E
AS=---- LIAS2 --------------------
DS 2 B V DS S-V DD

B
VD SS
ID
IAS
R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)

tp
tp Tim
e
 Peak Diode Recovery dv/dt Test Circuit & Waveforms

D U T +

V D S

I S D
L

D r iv e r
R G
S a m e Ty p e
as DU T V D D

V G S • d v / d t c o n t r o l l e d b y RG
• I S D c o n t r o lle d b y p u ls e p e r io d

G a te P u ls e W id th
V GS D =--------------------------
G a t e P uls e P er io d 10V
( D r iv e r )

IF M , B o d y D io d e F o r w a r d C u r r e n t
I S D
( D U T ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T ) B o d y D io d e R e c o v e r y d v / d t

V S D
V D D

B o d y D io d e
F o r w a r d V o lt a g e D r o p
Package Dimensions

TO-3P