STW12N170K5

Datasheet

N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh K5 Power MOSFET

in a TO‑247 package

Features
Order code VDS RDS(on) max. ID PTOT

STW12N170K5 1700 V 2.9 Ω 5A 250 W

• Industry’s lowest RDS(on) x area

3 • Industry’s best FoM (figure of merit)
2
1 • Ultra-low gate charge
TO-247 • Zener-protected

D(2, TAB) Applications

• Switching applications

G(1)
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh
K5 technology based on an innovative proprietary vertical structure. The result is
S(3) a dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.
AM01476v1_tab

Product status link

STW12N170K5

Product summary

Order code STW12N170K5

Marking 12N170K5
Package TO-247
Packing Tube

DS12847 - Rev 2 - March 2022 www.st.com

For further information contact your local STMicroelectronics sales office.
 STW12N170K5
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±30 V

Drain current at TC = 25 °C 5 A
ID
Drain current at TC = 100 °C 3 A

IDM (1)
Drain current (pulsed) 10 A

PTOT Total power dissipation at TC = 25 °C 250 W

dv/dt(2) Peak diode recovery voltage slope 4.5 V/ns

dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns

TJ Operating junction temperature range

-55 to 150 °C
Tstg Storage temperature range

1. Pulse width limited by safe operating area

2. ISD ≤ 5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
3. VDS ≤ 1360 V

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance, junction-to-case 0.5 °C/W

RthJA Thermal resistance, junction-to-ambient 50 °C/W

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR(1) (2) Maximum current during repetitive or single pulse avalanche 1.7 A

EAS (1)(3)
Single pulse avalanche energy 1000 mJ

1. Evaluated by characterization, not tested in production

2. Pulse width limited by TJmax
3. Starting TJ = 25 °C, ID = IAR, VDD = 50 V

DS12847 - Rev 2 page 2/13

 STW12N170K5
Electrical characteristics

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1700 V

VGS = 0 V, VDS = 1700 V 1 µA

IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1700 V,

50 µA
TC = 125 °C(1)

IGSS Gate body leakage current VDS = 0, VGS = ± 20 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V

RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 2.5 A 2.3 2.9 Ω

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1380 - pF

Coss Output capacitance VGS = 0 V, VDS = 100 V, f = 1 MHz - 73 - pF

Crss Reverse transfer capacitance - 2.7 - pF

Time-related equivalent
Co(tr)(1) - 65 - pF
capacitance
VDS = 0 V to 1360 V, VGS = 0 V
Energy-related equivalent
Co(er)(2) - 26 - pF
capacitance
RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3.8 - Ω

Qg Total gate charge VDD = 1360 V, ID = 5 A - 37 - nC

Qgs Gate-source charge VGS = 0 to 10 V - 10 - nC

(see Figure 15. Test circuit for gate
Qgd Gate-drain charge - 19 - nC
charge behavior)

1. Co(tr) is an equivalent capacitance that provides the same charging time as COSS while VDS is rising from 0 V to the stated
value.
2. Co(er)is an equivalent capacitance that provides the same stored energy as COSS while VDS is rising from 0 V to the stated
value.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 850 V, ID = 2.5 A, - 22 - ns

tr Rise time RG = 4.7 Ω, VGS = 10 V - 7 - ns

td(off) Turn-off delay time (see Figure 14. Test circuit for - 74 - ns
resistive load switching times
and Figure 19. Switching time
tf Fall time - 51 - ns
waveform)

DS12847 - Rev 2 page 3/13

 STW12N170K5
Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 5 A

ISDM Source-drain current (pulsed) - 10 A

VSD(1) Forward on voltage ISD = 5 A, VGS = 0 V - 1.5 V

trr Reverse recovery time ISD = 5 A, VDD = 60 V, - 350 ns

Qrr Reverse recovery charge di/dt = 100 A/µs - 3.91 µC

(see Figure 16. Test circuit for
IRRM Reverse recovery current inductive load switching and diode - 22.3 A
recovery times)
trr Reverse recovery time ISD = 5 A,VDD = 60 V, - 481 ns

Qrr Reverse recovery charge di/dt = 100 A/µs, TJ = 150 °C - 5.07 µC

(see Figure 16. Test circuit for
IRRM Reverse recovery current inductive load switching and diode - 21.0 A
recovery times)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A 30 - V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.

DS12847 - Rev 2 page 4/13

 STW12N170K5
Electrical characteristics (curves)

Operation in this area

2.1is limited by R Electrical characteristics (curves)
DS(on)

Figure 1. Safe operating area Figure 2. Thermal impedance

GC18460
ID GADG191120181151SOA
(A)

10 1 tp =10 µs
Operation in this area tp =100 µs
is limited by RDS(on)

tp =1 ms
10 0
tp =10 ms

Single pulse, TC = 25 °C,

TJ ≤ 150 °C, VGS = 10 V

10 -1
10 -1 10 0 10 1 10 2 10 3 VDS (V)

Figure 3. Output characteristics Figure 4. Transfer characteristics

ID GADG191120181130OCH ID GADG211120180929TCH
(A) VGS = 9, 10 V (A)
8 8
VGS = 8 V
7 7
VDS = 20 V
6 6
VGS = 7 V
5 5

4 4

3 3

2 2

1 VGS = 6 V 1
0 0
0 6 12 18 24 30 VDS (V) 2 3 4 5 6 7 8 9 VGS (V)

Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

VDS GADG191120181138QVG VGS RDS(on) GADG191120181132RID
(V) VDD = 1360 V, ID = 5 A (V) (Ω)
VDS
1200 12 VGS = 10 V
Qg 2.40
1000 10

Qgs Qgd 2.35

800 8

600 6
2.30

400 4
2.25
200 2

0 0 2.20
0 6 12 18 24 30 36 Qg (nC) 0 1 2 3 4 5 ID (A)

DS12847 - Rev 2 page 5/13

 STW12N170K5
Electrical characteristics (curves)

Figure 7. Normalized gate threshold voltage vs

Figure 8. Normalized on-resistance vs temperature
temperature
RDS(on) GADG191120181133RON
VGS(th) GADG191120181133VTH
(norm.)
(norm.)
2.2 VGS = 10 V
1.1 ID = 100 µA

1.8
1.0

1.4
0.9

1.0
0.8

0.6
0.7

0.2
0.6 -75 -25 25 75 125 Tj (°C)
-75 -25 25 75 125 Tj (°C)

Figure 9. Normalized V(BR)DSS vs temperature Figure 10. Source-drain diode forward characteristics

V(BR)DSS GADG191120181133BDV VSD GADG191120181131SDF

(norm.) (V)

1.08 ID = 1 mA 1.0
TJ = -50 °C
1.04 0.9

1.00 0.8
TJ = 25 °C

0.96 0.7

TJ = 150 °C
0.92 0.6

0.88 0.5
-75 -25 25 75 125 Tj (°C) 1 2 3 4 ISD (A)

Figure 11. Capacitance variations Figure 12. Maximum avalanche energy vs TJ

C GADG201120181046CVR EAS GADG201120181049EAS

(pF) (mJ)

1000
10 4

800
10 3 CISS

600
10 2
400
f = 1 MHz Single pulse,
COSS
10 1 ID = 1.7 A, VDD = 50 V
200
CRSS

10 0 0
10 -1 10 0 10 1 10 2 10 3 VDS (V) -50 0 50 100 TJ (°C)

DS12847 - Rev 2 page 6/13

 STW12N170K5
Electrical characteristics (curves)

Figure 13. Output capacitance stored energy

EOSS GADG201120181049EOS
(µJ)

30

20

10

0
0 400 800 1200 1600 VDS (V)

DS12847 - Rev 2 page 7/13

 STW12N170K5
Test circuits

3 Test circuits

Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior

VDD

RL

RL
2200 3.3
+ μF μF VDD IG= CONST
100 Ω D.U.T.
VGS
VD
pulse width +
2.7 kΩ
RG D.U.T. 2200 VG
VGS
μF
pulse width
47 kΩ

1 kΩ

AM01468v1 AM01469v10

Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit
diode recovery times

A A A
D L
fast 100 µH VD
G D.U.T. diode
S B 3.3 1000 2200 3.3
B B + µF
25 Ω D
µF + µF VDD µF VDD
ID
G D.U.T.
+ RG S

_ Vi D.U.T.

pulse width

AM01470v1
AM01471v1

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD
VGS 90%

0 10%

AM01472v1 AM01473v1

DS12847 - Rev 2 page 8/13

 STW12N170K5
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-247 package information

Figure 20. TO-247 package outline

aaa

0075325_10

DS12847 - Rev 2 page 9/13

 STW12N170K5
TO-247 package information

Table 9. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
aaa 0.04 0.10

DS12847 - Rev 2 page 10/13

 STW12N170K5

Revision history

Table 10. Document revision history

Date Version Changes

20-Nov-2018 1 First release.

Updated Section Features in cover page.
Updated Avalanche characteristics.
17-Mar-2022 2 Updated Table 5. Dynamic.
Updated TO-247 package information.
Minor text changes.

DS12847 - Rev 2 page 11/13

 STW12N170K5
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

DS12847 - Rev 2 page 12/13

 STW12N170K5

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DS12847 - Rev 2 page 13/13