Question bank of EEE-405(VLSI Engineering)
What is VLSI and why? Mention some typical VLSI system with application.
Show the Classification of IC elaborately and also variety of IC.
Give the advantages of 3D IC.
Write down the scale of integration of IC with circuit size.
What are the factors that depend on ASIC classification.
Why CMOS can be used in VLSI technology.
What factors that depend on VLSI technological growth.
Distinguish between BJT and CMOS.
Give the pros and cons of discrete and integrated circuit design/comparison between
discrete vs integrated circuit design.
State and explain Moore;s law.
Show a hierarchy of design abstractions for IC and explain it/ Show a typical design
abstraction ladder for digital systems and explain it.
Mention what is the difference between the TTL chips and CMOS chips?
Explain why present VLSI circuits use MOSFETs instead of BJTs?
What is the meaning of "the channel is pinched off"?
Why NMOS technology is preferred more than PMOS technology?
Explain the gate behavior of CMOS design technology.
Design a inverter gate using CMOS and describe its principle of operation.
Sketch/Design a two/three input NAND gate using CMOS and describe its principle of
operation.
Design a two or three input NOR gate using CMOS and describe its principle of
operation.
Construct and verify the universal gate using CMOS circuit.
Derive and explain the CMOS compound gate for function Y= 𝐴. 𝐵 + (𝐶. 𝐷)
Explain the terms of pass transistor and transmission gate.
Differentiate between latches and flip flop.
Mention different types of MOS layer.
Explain different types of operating region for an MOS transistor.
Classify CMOS process.
What is twin tub process? Why it is called so? What are the steps involved in twin tub
process. Also give the advantages of twin tub process.
Briefly explain SOI process. Write the advantages and disadvantages of SOI process.
Discuss BiCMOS process with mentioning steps.
Define interconnect. What are the types of interconnect.
What is stick diagram. Mention the uses of stick diagram. Give the various color coding
used in stick diagram.
Define threshold voltage. What factors depends on threshold voltage/What are the
various factors that can affect the threshold voltage.
Define body effect and latch up with diagram. How do you prevent latch up problem?
Define layout design rules and classify.
Draw and Discuss the physical layout(top view and cross section) of an inverter.
Draw and discuss the cross section view of an inverter with n well.
What are the design rules for layout with two metal layers in an n-well process.
How a layout can be designed for an inverter/two or three input NAND gate.
How stick diagram can be designed for an inverter and NAND gate.
How estimate the area/size of a 3 input NAND gate by stick diagram.
What are the differences between stick diagram and layout.
Sketch a stick diagram for a CMOS gate computing Y= (A+B+C).D and estimate the cell
width and height.
Explain the rules of stick diagram.
Mention the limitations of stick diagram.
Design stick diagram of two input NAND/NOR gate in CMOS.
Define subsystem. Describe the optimization to reduce delay and cost for subsystem
design.
What is shifter. How a barrel shifter performs shifts and rotates-explain.
Describe CMOS VLSI design of half adder/full adder circuit and hence verify the truth
table.
Discuss different types of RAM.
Distinguish between DRAM and SRAM/state in what way DRAM differ from SRAM.
Design and describe the high density 3T dynamic RAM.
Compare between volatile and non-volatile memory.
What is floorplanning and define the phases of floorplanning.
Discuss the general concept of floorplanning design.
Give a contrast between Si and GaAs technology for the processing of CMOS.
Advantages and disadvantages of CMOS dynamic logic structure.
Explain different types of operating region for an MOS transistor.
Why low power VLSI circuit design has become an important issue these days?
Describe different types of VLSI testing with proper illustration.
State the objectives of functionality test.
Explain the methodology of sequential circuit design of latches and flip flops.
Describe the technique used for low power design technique.
State the comparison between static and dynamic power dissipation of CMOS circuits
Briefly discuss about PLA.
Explain the methods to reduce dynamic power dissipation
How to design a high speed adder.
Describe a model for finding the switching characteristics for CMOS inverter and hence
find the Rise ,Fall and Delay time.
Describe the equation for source to drain current in the three regions of operation of a
MOS transistor and draw the V-I characteristics.
