Kasian 2013
Kasian 2013
NEW SUBSTANCES,
MATERIALS, AND COATINGS
Abstract—The physicochemical properties and electrochemical behavior of platinized titanium anodes pro
duced by a combined electrochemical method, which involves electrodeposition of a thin platinum layer on
a titanium substrate followed by heat treatment, are studied. The process is shown to result in the appearance
of a composite coating with a substantial content of titanium oxides. The composite obtained is an ntype
semiconductor, the flatband potentials of which and the number of charge carriers depend on the prepara
tion conditions. It is proposed to use the reduction peak of oxygencontaining platinum compounds on the
stripping voltammogram as a correlation parameter for predicting the electrocatalytic activity of heattreated
Ti/Pt composite electrodes with respect to the oxygen evolution reaction.
DOI: 10.1134/S2070205113050043
559
560 KASIAN et al.
I
I
20000
6000
surface
15000 10 min
20 min
30 min
45 min
10000
5000 surface
20 min
30 min
5000 45 min
0 4000
68 72 76 450 455 460
E_b(Pt 4f7/2), eV E_b(Ti 2p3/2), eV
Fig. 3. XPS data (TiOx/PtOy; 2 mg/cm2 Pt): Pt 4f7/2 peak Fig. 4. XPS data (TiOx/PtOy; 2 mg/cm2 Pt): Ti 2p3/2 peak
depending on the duration of ionic etching. depending on the duration of ionic etching.
i, А/сm2
of the oxygen from the air. The hydroxide form of oxy 0
gen and adsorbed water are present on the surfaces of
most metals and oxides that were exposed to air for a
long time. Deeper in the coating, one can see no sign of –0.001
adsorbed hydrocarbons and hydroxide oxygen forms.
The existence of an O 1s peak indicates the presence of
titanium oxides at any depth in the bulk of the coating. –0.002
Upon longer ionic etching, one can identify pro 0 0.5 1.0 1.5
nounced Ti 2p3/2 peaks in two clearly distinguishable E (AgCl/Ag), V
ranges, namely, 452–455 and 458–460 eV. The former
peak corresponds to metallic titanium, including TixPty
Fig. 5. Cyclic voltammograms (100 mV/s) on platinum in
compound at 454.4 eV. The latter peak can be assigned 1 M chloric acid.
to Ti(IV) compound, namely TiO2.
The titaniumtoplatinum ratio in the depth of
the coating calculated from the XPS data is given in although the current is higher nearly by an order, which
Table 1. As follows from the results, the coating is not confirms the above supposition about the nature of the
homogeneous; and the platinum content substantially changes observed.
decreases from the outer surface toward the substrate With an increase in the temperature of treatment of
(from 92 to 67 at %), which indicates the local character Pt/Ti electrodes, the oxygen evolution current
of the coating and is in agreement with the SEM data. It increases, but the overpotential of the process remains
is quite possible that a certain amount of TixPty interme unchanged (Figs. 6a–6d). It is likely that the heat treat
tallic compound with a low platinum content is formed ment of the electrodes results in the appearance of
during platinum deposition on a titanium substrate. defects and cracks, which leads to an increase in the true
In the coatings that did not undergo heat treatment, surface area and, hence, in the activity of Ti/Pt. On all
platinum is chiefly contained in metallic form, while the electrodes considered, metallic platinum surface
titanium is present in both metallic and oxidized states. parts are electrochemically active sites, which deter
The data obtained enable us to suppose that the heat mines the constancy of the overpotential of oxygen evo
treatment, which promotes platinum diffusion both lution.
over the surface and deep in the coating, should result in
the formation of a composite material of the following Extending the potential cycling range in the anodic
general composition: PtxTiyO(1 – x – y). direction results in the formation of more strongly
bound chemisorbed oxygen and phase platinum oxides,
which leads to the increase in the peak reduction cur
Electrochemical Behavior rent and the shift in the peak potential to the negative
of Platinized Titanium Anodes values (Fig. 7).
Figure 5 shows a cyclic voltammogram of the plati In order to clarify the difference in the nature and
num electrode in 1 M HClO4. The anodic branch of the amount of platinum oxides formed in a potential range
voltammogram involves a weakly pronounced peak of of oxygen evolution on Ti/Pt electrodes, stripping vol
hydrogen desorption; a current plateau (1.0–1.3 V), tammetry with a linear potential sweep was used. Peak
which corresponds to the formation of phase platinum potential on inverse voltammograms recorded on Ti/Pt
oxides; and an exponentially ascending segment, which electrodes with a platinum content of 2 mg/cm2 is
corresponds to oxygen evolution at Е ≥ 1.3 V. The
cathodic branch of the curve involves the reduction
peak of oxygencontaining platinum compounds of Table 1. Surface contents of titanium and platinum in the
diverse nature. sample depending on the duration of etching with argon
The shapes of cyclic voltammograms recorded on Duration, min Ti, at % Pt, at %
platinized titanium electrodes resemble a curve
obtained on platinum, since the curves involve the same 0 8.15 91.85
typical segments (Fig. 6). Note that the current values 10 7.96 92.04
observed on platinized titanium are higher than those 20 10.14 89.86
on platinum (Fig. 6a), which is obviously determined by
the extended surface of a Ti/Pt electrode. At the same 30 23.83 76.17
time, the overpotential of oxygen evolution is the same, 45 32.66 67.34
(а) (b)
0.02 0.08
i, А/сm2
i, А/сm2
0 0.04
–0.02 0
0 0.5 1.0 1.5 0 0.5 1.0 1.5
E (AgCl/Ag), V E (AgCl/Ag), V
(c) (d)
0.08 0.10
i, А/сm2
i, А/сm2
0.04
0.05
0
0
Fig. 6. Cyclic voltammograms (100 mV/s) on platinized titanium electrodes heat treated at (a) 298, (b) 503, (c) 583 and
(d) 683 K, in 1 M chloric acid.
–0.01 30
Ip, mА
15
i, А/сm2
Ip, mA
–0.01
1
1 10 –0.02 2
3
20
2 4
–0.02 3
4 –0.03
5
6 10
5 5
6
0 –0.04 0
0.2 0.4 0.6 2 4 6 8 10 12 0 0.2 0.4 2 4 6 8 10 12 14 16
E (AgCl, Ag), V V1/2, (mV/s)1/2 E (AgCl, Ag), V V1/2, (mV/s)
(c) (d) 0.42
logi, А/сm2
0.42 –1.4 (c) –1.4 (d)
lgi, А/сm2
0.38 0.38
–1.8 –1.8
Ep, V
Ep, V
0.34 0.34
–2.2
0.30 0.30 –2.2
0.26 –2.6 0.26 –2.6
0.22 –3.0 0.22
–5.5–4.5–3.5–2.5–1.5 –2.2 –1.8 –1.4 –1.0 –5 –4 –3 –2 –2.6–2.2–1.0–1.4–1.0
lnV (V/s) logV (V/s) lnV (V/s) logV (V/s)
titanium dioxide, which is characterized by a high bond probably determined by the formation of mixed plati
energy with oxygencontaining particles [21]. This num–titanium oxides at high temperature accompa
hypothesis is supported by the shift of the peak potential nied with phase transformation with a partial encapsu
by 20 mV to the negative values upon the heat treatment lation of the electrochemically active platinum com
of the electrode at 503 K. In this case, the peak current pounds over the electrode surface [22, 23].
is not changed, which indicates the constancy of the
amount of electrochemically active platinum involved
in oxygencontaining compounds. 0
Further increase in the temperature of treatment to
583 K seemingly results in the thermal diffusion of plat
inum and its uniform distribution over the titanium sur
face, which is confirmed by the SEM data. As a result, –0.01
i, А/сm2
E (AgCl, Ag), V
1 metallic conductivity [27]. As follows from [28–33], the
i, А/сm2
1 1.6 2
0.10
2
3
3
4
characteristics of titanium dioxide as a semiconductor
4
1.5 substantially depend on the conditions of its prepara
0.05 tion and are determined by the thickness of the oxide
1.4 film, oxide stoichiometry, and its allotropic modifica
tion.
0 1.3
1.4 1.5 1.6 1.7 1.8 1.9 2.0 –4.0–3.5–3.0–2.5–2.0 Therefore, we studied the semiconductor properties
E (AgCl/ Ag), V logi, А/сm2 of the oxide film formed on titanium as a result of its
heat treatment in a tube furnace in air at 683 K for an
hour (Fig. 12). The resulting material is an ntype semi
Fig. 11. Polarization curves (5 mV/s) in 1 M chloric acid conductor with a flat band potential (EFB) of –0.589 V
on platinized titanium electrodes produced upon heat
treatment at a temperature, K: (1) 298, (2) 503, (3) 583,
and a concentration of charge carriers of 6 × 1020 cm–3.
and (4) 683. The high concentration of charge carriers is probably
determined by the small thickness of the oxide film and
its nonstoichiometric composition, as a result of which
As was shown previously, the electrocatalytic activ the surface is not noticeably depleted of electrons that
ity of platinized titanium substantially depends on the are donated by the metallic titanium.
amount of platinum on the anode surface [24]. Heat Platinized titanium electrodes are highly doped
treatment of the electrodes promotes the thermal diffu semiconductors, because both metallic titanium and
sion of platinum and its encapsulation in titanium platinum serve as electron donors in this case. Figure 13
oxides, as a result of which the surface amount of elec shows Mott–Schottky dependences for platinized tita
trochemically active platinum changes. Therefore, the nium electrodes, which, as was to be expected, are
electrocatalytic activity of platinized titanium anodes ntype semiconductors. The flat band potential of the
obtained at different temperatures can depend on the electrode, which was not heattreated, is much higher
temperature of treatment. Figure 11 shows polarization than the corresponding values of the heattreated elec
curves recorded on platinized titanium electrodes in a 1 trodes (Table 2). This can be determined by the fact that
M chloric acid solution upon heat treatment of the titanium oxide film formed as a result of the anodic
electrodes at different temperatures. According to the polarization is thin, has less stoichiometric composi
data obtained, the overpotential of oxygen evolution tion, and substantially differs from those produced
depends on the production conditions of the electrode upon heat treatment. The concentration of charge car
material. It is worth noting also that, in all the cases riers in the electrode treated at 503 K and that in the
considered, polarization curves represented in semilog anode, which was not subjected to heat treatment,
arithmic coordinates have large slopes (Table 2). The almost coincide. This may be due to the fact that the
slopes, which substantially exceed the theoretically pos amount of metallic platinum, which acts as an electron
sible values, and the linear character of the dependences donor, does not practically change as a result of heat
unambiguously indicate the existence of the semicon treatment at low temperatures. With an increase in the
ductor component in the electrode capacitance. temperature, the flat band potential and the concentra
The semiconductor properties of platinized tita tion of charge carriers increase, that can be determined
nium electrodes are caused by the formation of titanium by the thermal diffusion of the alloying component
dioxide, which is known [25] to be ntype semiconduc (platinum) deep into the titanium substrate and the
tor. As was mentioned in [26], the presence of titanium resulting more uniform distribution of the component
dioxide in a coating, transient layer, or substrate affects at the higher temperature of treatment.
Table 2. The slopes of semilogarithmic potential–current dependences and semiconductor properties of titanium–plati
num composite electrodes
(a) Yintercept and (b) slope
Characteristics of Ti/Pt electrode Semiconductor properties
of polarization curves
Temperature
Pt content, mg/cm2 a, V b, mV EFB, V N × 10–23, cm–3
of treatment, K
298 1.94 157 0.788 6.8
503 1.88 134 0.337 5.2
2
583 1.84 140 0.412 14
683 1.85 147 0.487 16
14 5 × 106
1
12 2
C–2 × 10–8, сm4/F2 4 × 10 6
C–2, F2/cm4
3
4
10
3 × 106
8
7.5 × 105
6
5.0 × 105
4
2.5 × 105
2
0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
–0.6 –0.4 –0.2 0 0.2 E (AgCl/Ag), V
–0.5 –0.3 –0.1 0.1
E (AgCl/Ag), V
Fig. 13. The Mott–Schottky dependences on Ti/Pt elec
Fig. 12. The Mott–Schottky dependence on TiO2 trodes obtained upon heat treatment at (1) 298, (2) 503,
obtained upon heat treatment of titanium at 683 K at an (3) 583, and (4) 683 K at an alternating current frequency
alternating current frequency of 20 Hz. of 20 Hz.
REFERENCES 22. Pesty, F., Steinriick, H.P., and Madey, T.E., Surf. Sci.,
1995, vol. 339, p. 83.
1. Wang, X.Y., Jiang, Y.S., Zhu, H., et al., Chem. Res. 23. Matsumoto, T., Batzill, M., Hsieh, S., et al., Surf. Sci.,
Chin. Univ., 2011, vol. 27, no. 3, p. 486. 2004, vol. 572, p. 146.
2. Kim, J. and Choi, W., Appl. Catal. B, 2011, vol. 106, 24. Kasian, O., Luk’yanenko, T., and Velichenko, A., Russ.
nos. 1–2, p. 39. J. Electrochem., 2012, vol. 48, no. 12, p. 1.
3. Kasian, O., Luk’yanenko, T., and Velichenko, A., Chem. 25. Gurevich, Yu.Ya. and Pleskov, Yu.V., Fotoelek
Chem. Technol., 2012, vol. 6, no. 3, p. 241. trokhimiya poluprovodnikov (Photoelectrochemistry of
Semiconductors), Moscow: Nauka, 1983.
4. Shanmugam, S. and Gedanken, A., J. Phys. Chem. C,
2009, vol. 113, no. 43, p. 18707. 26. Devilliers, D. and Mahe, E., Electrochim. Acta, 2010,
vol. 55, p. 8207.
5. Selvaganesh, S.V., Selvarani, G., Sridhar, P., et al., J.
Electrochem. Soc., 2010, vol. 157, no. 7, p. B1000. 27. Razina, N.F., Okisnye elektrody v vodnykh rastvorakh
(Oxide Electrodes in Aqueous Solutions), AlmaAta:
6. Jang, G.W. and Rajeshwar, K., J. Electrochem. Soc., Nauka, 1982.
1987, vol. 134, no. 7, p. 1830.
28. Di Quarto, F., Piazza, S., and Sunseri, C., Electrochim.
7. Tamura, T., Ishibashi, S., Terakura, K., et al., Phys. Rev. Acta, 1993, vol. 38, p. 29.
B, 2009, vol. 80, no. 19.
29. Sellers, M.C.K. and Seebauer, E.G., Thin Solid Films,
8. Selvarani, G., Maheswari, S., Sridhar, P., et al., J. Elec 2011, vol. 519, p. 2103.
trochem. Soc., 2009, vol. 156, no. 11, p. B1354.
30. Blackwood, D.J., Electrochim. Acta, 2000, vol. 46,
9. Jeong, D.S., Schroeder, H., and Waser, R., Nanotecnol p. 563.
ogy, 2009, vol. 20, no. 37. 31. Dolata, M., Kedzierzawski, P., and Augustynski, J.,
10. Kim, S. and Lee, S.K., J. Photochem. Photobiol. A, Electrochim. Acta, 1996, vol. 41, nos. 7–8, p. 1287.
2009, vol. 203, nos. 2–3, p. 145. 32. Munoz, A.G., Electrochim. Acta, 2007, vol. 52, p. 4167.
11. Fan, J.W., Liu, X.H., and Zhang, J., Environ. Tech 33. Sang, L.X., Zhang, Z.Y., and Ma, C.F., Int. J. Hydrogen
nol., 2011, no. 4, p. 427. Energy, 2011, vol. 36, p. 4732.
12. Hirakawa, K., Inoue, M., and Abe, T., Electrochim. 34. Kasatkin, E.V., Potapova, G.F., Erusalimchik, I.G.,
Acta, 2010, vol. 55, no. 20, p. 5874. et al., Prot. Met. Phys. Chem. Surf., 2010, vol. 46, no. 6,
p. 673.
13. Wen, D., Shaojun, G., Junfeng, Z., et al., J. Phys. Chem.
C, 2009, vol. 113, no. 30, p. 13023. Translated by Y. Novakovskaya