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Fedc Iat-I

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Fedc Iat-I

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hodbme
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P.S.V.

COLLEGE OF ENGINEERING AND TECHNOLOGY


(An Autonomous Institution)
(Approved by AICTE, New Delhi and Affiliated to Anna University, Chennai)
Accredited by the NAAC with ‘A’ Grade
(Inclusion Under Section 2(f) & 12(B) of the UGC Act, 1956)
(An ISO 9001: 2015 Certified Institution)
Bangalore –Chennai Highway (NH-46)
Mittapalli,Balinayanapalli Post, Krishnagiri-635108.

DEPARTMENT OF BIOMEDICAL ENGINEERING


IAT I-EXAMINATION

FUNDAMENTAL OF ELECTRONIC
Sub Code/Name : BM3353
DEVICES AND CIRCUITS
Dept/ Year : BME/III Date:08.10.2024
Duration: 1:00-1:00 pm Max. Marks : 100 R-2021
Course Outcomes
CO1 Analyze the characteristics of semiconductor diodes.

CO2 Analyze and solve problems of Transistor circuits using model parameters.

CO3 Identify and characterize diodes and various types of transistors.


Q. Question Marks CO BL
No
PART-A
1 Differentiate between intrinsic and extrinsic semiconductor 2 CO1 L2
2 Define the term diffusion current? 2 CO1 L1
3 Give the expression for diffusion current density 2 CO1 L1

4 What is barrier potential? 2 CO1 L1


5 Define the term transition capacitance? 2 CO2 L1

6 Why h parameter model is important for BJT 2 CO2 L1

7 What do you meant by thermal runway 2 CO2 L1


8 Why is the transistor called a current controlled device 2 CO2 L1
9 Define the term threshold voltage. 2 CO3 L1
10 Write some applications for JFET. 2 CO3 L1
PART – B
a) Explain the drift current and diffusion currents for PN diode.
(Or)
11 13 CO1 L2
b) Explain the operation of PN junction diode and derive its diode current
equation?
a) Explain the operation of PN junction under re verse bias and forward
bias condition with its characteristics. (Or)
12 13 CO1 L2
b) Explain details about the switching characteristics on PN diode with
neat Sketch.
a) Explain the input and output characteristics of a transistor in CE
13 configuration 13 CO2 L2
(Or)
b) Explain common base amplifier using hybrid π model.
a) Explain common collector amplifier using h- parameter
14
(Or) 13 CO2 L2
Explain details about the Ebers Moll model

a)With neat diagram explain the operation of MOSFET in Depletion mode


15 and derive its current equations (Or) 13 CO3 L2
b) With neat diagram explain the operation of MOSFET in Enhancement
mode and derive its current equations
PART – C
a i) The voltage across silicon diode at room temperature of 300° k is
0.71V. when 2.5mA current flows through it. If the voltage increases to 6 CO1 L3
0.8V, calculate the new diode current?
ii) Explain briefly about the Gummel Poon model 6 CO2 L2
iii) Compare N channel MOSFET with P MOSFET? 3 CO3 L2
16 (OR)
b) i) The reverse bias saturation current for a PN junction diode is 1µ A at
6 CO1 L3
300K. Determine its AC resistance at 250mV forward bias.
ii) Explain the operation of NPN and PNP transistors 6 CO2 L2
iii) Draw the V-I characteristics curve of MOSFET?
3 CO3 L2

BL – Bloom’s Taxonomy Levels (1-Remembering, 2-Understanding, 3-Applying, 4-Analysing, 5-


Evaluating, 6-Creating)
CO Particulars Total Mark
CO1 Part A - 4x2 = 8 / Part B - 2x13 = 26 / Part C – 1x6 = 6 40
CO2 Part A - 4x2 = 8 / Part B - 2x13 = 26 / Part C – 1x6 = 6 40
CO3 Part A - 2x2 = 4 / Part B - 1x13 = 13 / Part C – 1x3 = 3 20
CO Coverage:

Bloom's Level Wise Mark Course Outcome Wise


1 Distribution Marks Distribution
5 40 40
%

18% REMEMBER
UNDERSTAND 20

APPLY
67%

CO1 CO2 CO3

Course Instructor HOD Principal

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