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527 - El Ii Ec 03

This document is an examination paper for the 2nd semester Electronics course, focusing on Semiconductor Physics. It consists of three sections: objective questions worth 10 marks, short answer questions worth 15 marks, and descriptive questions worth 50 marks, totaling 75 marks. The exam allows the use of a simple calculator and covers various topics related to semiconductor theory and applications.

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0% found this document useful (0 votes)
35 views6 pages

527 - El Ii Ec 03

This document is an examination paper for the 2nd semester Electronics course, focusing on Semiconductor Physics. It consists of three sections: objective questions worth 10 marks, short answer questions worth 15 marks, and descriptive questions worth 50 marks, totaling 75 marks. The exam allows the use of a simple calculator and covers various topics related to semiconductor theory and applications.

Uploaded by

bobbyisfire999
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

EL/II/EC/03 Student’s Copy

2024
( CBCS )

( 2nd Semester )

ELECTRONICS

SECOND PAPER

( Semiconductor Physics )

Full Marks : 75
Time : 3 hours

The figures in the margin indicate full marks for the questions

Simple calculator may be used in this paper

( SECTION : A—OBJECTIVE )

( Marks : 10 )

Tick (3) the correct answer in the brackets provided : 1×10=10

1. Addition of impurity to a pure semiconductor is called

(a) rectification ( )

(b) drift current ( )

(c) doping ( )

(d) extrinsic semiconductor ( )

/527 1 [ Contd.
2. At room temperature, an intrinsic semiconductor has
(a) many holes only ( )
(b) a few free electrons and holes ( )
(c) many free electrons only ( )
(d) no hole or free electrons ( )

3. An ideal crystal diode is one which behaves as a perfect ______ when


forward biased.
(a) conductor ( )
(b) insulator ( )
(c) resistance material ( )
(d) capacitance material ( )

4. The ripple factor of a full-wave rectifier is


(a) 2 ( )
(b) 1·21 ( )
(c) 2·5 ( )
(d) 0·48 ( )

5. A p-n junction that radiates energy as light instead of as heat is called


(a) LED ( )
(b) photodiode ( )
(c) PIN diode ( )
(d) Zener diode ( )

6. Zener diodes are used primarily as


(a) amplifiers ( )
(b) voltage regulators ( )
(c) rectifiers ( )
(d) oscillators ( )

/527 2 [ Contd.
7. In a p-n-p transistor, the current carriers are

(a) acceptor ions ( )

(b) donor ions ( )

(c) holes ( )

(d) free electrons ( )

8. The arrow in the symbol of a transistor indicates the direction of

(a) electron current in the emitter ( )

(b) electron current in the collector ( )

(c) hole current in the emitter ( )

(d) donor ion current ( )

9. The operating point of a transistor is also called

(a) quiescent point ( )

(b) cut-off point ( )

(c) saturation point ( )

(d) intersection point ( )

10. The d.c. load line of a transistor circuit is the line

(a) on the input characteristics ( )

(b) on the output characteristics ( )

(c) along which Q-point shifts up and down ( )

(d) which does not contain the Q-point ( )

/527 3 [ Contd.
( SECTION : B—SHORT ANSWERS )

( Marks : 15 )

Answer the following questions : 3×5=15


UNIT—I
1. Explain the salient features of Bohr’s atomic model.
OR

2. Discuss the formation of hole current.


UNIT—II

3. Explain the different equivalent circuits of a semiconductor diode.


OR

4. What are the important electrical properties of a capacitor and an inductor


in making a filter circuit?
UNIT—III

5. Explain the working of a Zener diode as peak clipper.


OR

6. Describe the construction of thermistor.


UNIT—IV

7. With diagram, explain the working of p-n-p transistor.


OR

8. A transistor has a = 0 × 98, I B = 100 mA and I CO = 6 mA. Calculate I C and I E .


UNIT—V

9. Write down the steps for the construction of d.c. load line.
OR

10. Write a short note on d.c. and a.c. load lines.

/527 4 [ Contd.
( SECTION : C—DESCRIPTIVE )
( Marks : 50 )

Answer the following questions : 10×5=50

UNIT—I

1. (a) With diagram, explain the formation of p-type and n-type


semiconductors. 3+3=6

(b) What is energy band? Explain insulators, conductors and


semiconductors in terms of energy band. 1+3=4
OR
2. (a) From the V-I characteristics of p-n junction diode, explain zero external
voltage, forward bias and reverse bias. 6

(b) Explain the terms break-down voltage and knee voltage. 2+2=4

UNIT—II

3. (a) Explain with a diagram, how semiconductor diode can be used as a


full-wave rectifier. Show that its maximum efficiency is 81·2%. 3+3=6

(b) Describe the filtering action of a choke-input filter. 4


OR
4. (a) What is ripple factor? Derive the value of ripple factor for half-wave and
full-wave rectifiers. 1+3+3=7

(b) Describe the filtering action of a p filter. 3

UNIT—III

5. (a) Explain the working and V-I characteristics of Shockley diode. 2+2=4

(b) Describe the construction and V-I characteristics of Zener diode.


Explain how Zener diode regulates the voltage. 3+3=6

/527 5 [ Contd.
OR
6. (a) Describe the operation, characteristics and one application of a
photodiode. 2+2+2=6

(b) Describe the operation voltage and current of LED. 4

UNIT—IV

7. (a) Write a short note on the leakage currents in a transistor for CE


configuration. 6

(b) With diagram, explain the three primary currents which flow in a
properly biased p-n-p transistor. 4
OR

8. (a) Describe common base (CB) transistor’s static characteristics (input,


output and current transfer). 6

a
(b) Show the relation b = , where the symbols have their usual
1-a
meanings. 4

UNIT—V

9. (a) Describe the bandwidth and frequency response curve of an amplifier. 6

(b) Describe class—A, class—B, class—C and class—AB amplifiers. 4


OR

10. (a) Explain input resistance, output resistance, current gain, voltage gain,
power gain of transistor amplifier. 6

(b) Using the output characteristics along with the d.c. load line of CE
transistor circuit, explain the terms cut-off, saturation and active
region. 4

HHH

/527 6 24G—20

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