STB34N65M5, STI34N65M5,

STP34N65M5, STW34N65M5
N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs
in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet - production data

TAB TAB
Features
2 Order codes VDS @ TJmax RDS(on) max ID
3
1 3
12
STB34N65M5
D2PAK
I2PAK
STI34N65M5
710 V 0.11 Ω 28 A
TAB STP34N65M5
STW34N65M5

• Worldwide best RDS(on) * area

3 3
1
2
1
2 • Higher VDSS rating and high dv/dt capability
TO-220 TO-247 • Excellent switching performance
• 100% avalanche tested
Figure 1. Internal schematic diagram
Applications
$ • Switching applications

Description
These devices are N-channel MDmesh™ V
'
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
3
resulting product has extremely low on-
resistance, which is unmatched among silicon-
!-V based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.

Table 1. Device summary

Order codes Marking Packages Packaging

STB34N65M5 D2PAK Tape and reel

STI34N65M5 I2PAK
34N65M5
STP34N65M5 TO-220 Tube
STW34N65M5 TO-247

October 2013 DocID022853 Rev 3 1/22

This is information on a product in full production. www.st.com
Contents STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 28 A
ID Drain current (continuous) at TC = 100 °C 17.7 A
IDM (1) Drain current (pulsed) 112 A
PTOT Total dissipation at TC = 25 °C 190 W
dv/dt (1)
Peak diode recovery voltage slope 15 V/ns
dv/dt (2)
MOSFET dv/dt ruggedness 50 V/ns
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. ISD ≤ 28 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
2. VDS ≤ 480 V

Table 3. Thermal data

Value
Symbol Parameter Unit
TO-220,
D2PAK TO-247
I2PAK

Rthj-case Thermal resistance junction-case max 0.66 °C/W

Rthj-pcb Thermal resistance junction-pcb max(1) 30 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive

IAR 7 A
(pulse width limited by Tjmax)
Single pulse avalanche energy (starting tj=25°C,
EAS 510 mJ
Id= IAR; Vdd=50)

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22
Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 650 V
breakdown voltage
Zero gate voltage VDS = 650 V 1 µA
IDSS
drain current (VGS = 0) VDS = 650 V, TC=125 °C 100 µA
Gate-body leakage
IGSS VGS = ± 25 V ± 100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source
RDS(on) VGS = 10 V, ID = 14 A 0.09 0.11 Ω
on-resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 2700 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, - 75 - pF
VGS = 0
Crss Reverse transfer
- 6.3 - pF
capacitance
Equivalent
Co(tr)(1) capacitance time - 220 - pF
related
VDS = 0 to 520 V, VGS = 0
Equivalent
Co(er)(2) capacitance energy - 63 - pF
related
Intrinsic gate
RG f = 1 MHz open drain - 1.95 - Ω
resistance
Qg Total gate charge VDD = 520 V, ID = 14 A, - 62.5 - nC
Qgs Gate-source charge VGS = 10 V - 17 - nC
Qgd Gate-drain charge (see Figure 18) - 28 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td (v) Voltage delay time - 59 - ns

VDD = 400 V, ID = 18 A,
tr (v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 8.7 - ns
tf (i) Current fall time (see Figure 19 and - 7.5 - ns
Figure 22)
tc(off) Crossing time - 12 - ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 28 A

ISDM (1)
Source-drain current (pulsed) - 112 A
VSD (2)
Forward on voltage ISD = 28 A, VGS = 0 - 1.5 V
trr Reverse recovery time - 350 ns
ISD = 28 A, di/dt = 100 A/µs
Qrr Reverse recovery charge - 5.6 µC
VDD = 100 V (see Figure 22)
IRRM Reverse recovery current - 32 A
trr Reverse recovery time ISD = 28 A, di/dt = 100 A/µs - 422 ns
Qrr Reverse recovery charge VDD = 100 V, Tj = 150 °C - 7.4 µC
IRRM Reverse recovery current (see Figure 22) - 35 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK, I2PAK Figure 3. Thermal impedance for D2PAK, I2PAK
and TO-220 and TO-220
AM15311v1
ID
(A)
is

100
R rea
on)
ax a
S(
m his

D
by in t
ite tion
Li era

10µs
d

10
p
O
m

100µs
1ms
Tj=150°C
1 Tc=25°C 10ms
Single
pulse
0.1
0.1 1 10 100 VDS(V)

Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247
AM15318v1
ID
(A)

100

is
ea )
ar S(on
hi
s
t R
D 10µs
10 in ax
t
n
io y m 100µs
ra b
pe ed
O imit 1ms
L Tj=150°C
1 Tc=25°C 10ms
Single
pulse
0.1
0.1 1 10 100 VDS(V)

Figure 6. Output characteristics Figure 7. Transfer characteristics

AM15319v1 AM15320v1
ID ID
(A) (A)
VGS= 9 V
80 80 VDS= 25 V
VGS= 8 V
70 70
60 60

50 50

40 40
VGS= 7 V
30 30
20 20

10 10
VGS= 6 V
0 0
0 5 10 15 20 25 VDS(V) 3 4 5 6 7 8 9 VGS(V)

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

AM15321v1 RDS(on) AM15322v1
VGS
(V) VDS (Ω)
VDD=520 V (V) 0.096
12 500
ID=14 A VGS=10V
VDS 0.096
10 0.094
400
8 0.092
300 0.09
6
0.088
200
4 0.086

100 0.084
2
0.082
0 0 0.08
0 20 30 40 50 60 70 80 Qg(nC) 0 5 10 15 20 25 ID(A)

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
AM15323v1 AM15324v1
C Eoss
(pF) (µJ)
12
1000

Ciss 10
1000
8

6
100
Coss
4
10
Crss 2

1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)

Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs
temperature temperature
VGS(th) AM05459v1 AM05460v1
RDS(on)
(norm) VDS = VGS (norm) VGS = 10 V
1.10 ID = 250 µA 2.1 ID = 14 A
1.9
1.00 1.7

1.5

0.90 1.3
1.1

0.80 0.9

0.7
0.70 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)

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Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Figure 14. Source-drain diode forward Figure 15. Normalized VDS vs temperature
characteristics
AM05461v1 AM10399v1
VSD VDS
(norm)
(V) TJ=-50°C
1.08
1.2 ID = 1mA
1.06
1.0
1.04
0.8 1.02
TJ=25°C
1.00
0.6
TJ=150°C 0.98
0.4
0.96
0.2
0.94
0 0.92
0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)

Figure 16. Switching losses vs gate resistance

(1)

AM15325v1
E (μJ)
Eon
VDD=400 V
VGS=10 V
500 ID=18 A

400

300

200
Eoff

100

0
0 10 20 30 40 RG(Ω)
1. Eon including reverse recovery of a SiC diode

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Test circuits

3 Test circuits

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
Inductive Load Turn - off
V(BR)DSS Id

VD 90%Vds 90%Id

td(v)

IDM
Vgs

90%Vgs on

ID
))
Vgs(I(t))

VDD VDD 10%Vds 10%Id

Vds
tr(v) tf(i)

tc(off)
AM01472v1 AM05540v1

DocID022853 Rev 3 9/22

22
Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

10/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 9. D²PAK (TO-263) mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e 2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.4
V2 0° 8°

DocID022853 Rev 3 11/22

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Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Figure 23. D²PAK (TO-263) drawing

0079457_T

Figure 24. D²PAK footprint(a)

16.90

12.20 5.08

1.60

3.50
9.75
Footprint

a. All dimension are in millimeters

12/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 10. I²PAK (TO-262) mechanical data

mm.
DIM.
min. typ max.

A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E 10 10.40
L 13 14
L1 3.50 3.93
L2 1.27 1.40

DocID022853 Rev 3 13/22

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Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Figure 25. I²PAK (TO-262) drawing

0004982_Rev_H

14/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 11. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

DocID022853 Rev 3 15/22

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Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Figure 26. TO-220 type A drawing

?TYPE!?2EV?4

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 12. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

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Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Figure 27. TO-247 drawing

0075325_G

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Packaging mechanical data

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R 50
T 0.25 0.35
W 23.7 24.3

DocID022853 Rev 3 19/22

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Packaging mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Figure 28. Tape

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B1 B0

For machine ref. only A0 P1 D1

including draft and
radii concentric around B0
User direction of feed

Bending radius
User direction of feed

AM08852v1

Figure 29. Reel

T
REEL DIMENSIONS

40mm min.

Access hole

At slot location

A N

Full radius Tape slot G measured at hub

in core for
tape start 25 mm min.
width

AM08851v2

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Revision history

6 Revision history

Table 14. Document revision history

Date Revision Changes

23-Feb-2012 1 First release.

– Added package, mechanical data: I²PAKFP
– Updated Table 1: Device summary, Table 2: Absolute maximum
15-Oct-2012 2 ratings, Table 3: Thermal data.
– Minor text changes.
– Curves inserted
– The part numbers STF34N65M5 and STFI34N65M5 have been
moved to the separate datasheet
– Modified: Figure 1
02-Oct-2013 3 – Added: MOSFET dv/dt ruggedness parameter in Table 2
– Updated: Section 4: Package mechanical data and Section 5:
Packaging mechanical data
– Minor text changes

DocID022853 Rev 3 21/22

22
 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

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22/22 DocID022853 Rev 3