STB120N10F4,
STP120N10F4
N-channel 100 V, 8 m typ., 120 A, STripFET DeepGATE
Power MOSFETs in D2PAK and TO-220 packages
Datasheet production data
Features
Order codes
VDS
RDS(on) max.
ID
100 V
10 m
120 A
TAB
STB120N10F4
TAB
STP120N10F4
3
D PAK
N-channel enhancement mode
Very low on-resistance
Low gate charge
TO-220
100% avalanche rated
Applications
Figure 1. Internal schematic diagram
Switching applications
Description
' 7$%
These devices are N-channel Power MOSFETs
developed using STs STripFET DeepGATE
technology. The devices have a new gate
structure and are specially designed to minimize
on-state resistance to provide superior switching
performance.
*
6
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Table 1. Device summary
Order codes
Marking
Packages
Packaging
D2PAK
Tape and reel
TO-220
Tube
STB120N10F4
120N10F4
STP120N10F4
April 2014
This is information on a product in full production.
DocID026168 Rev 1
1/18
www.st.com
Contents
STB120N10F4, STP120N10F4
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits
............................................... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
D2PAK, STB120N10F4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2
TO-220, STP120N10F4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID026168 Rev 1
STB120N10F4, STP120N10F4
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
VGS
Gate-source voltage
20
ID
Drain current (continuous) at TC = 25 C
120
ID
Drain current (continuous) at TC = 100 C
85
Drain current (pulsed)
390
Total dissipation at TC = 25 C
300
W/C
215
mJ
55 to 175
IDM
(1)
PTOT
Derating factor
EAS (2)
Tstg
Tj
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25 C, ID= 65 A, VDD= 50 V
Table 3. Thermal data
Value
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb
Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
DocID026168 Rev 1
Unit
D2PAK
TO-220
0.5
C/W
35
C/W
62.5
C/W
3/18
18
Electrical characteristics
STB120N10F4, STP120N10F4
Electrical characteristics
(TCASE = 25 C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
Test conditions
ID = 250 A, VGS = 0
Min.
Typ.
Max.
100
Unit
V
VDS = 100 V
VDS = 100 V,TC=125 C
100
Gate-body leakage
current (VDS = 0)
VGS = 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 A
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 60 A
10
Min.
Typ.
Max.
Unit
7290
pF
568
pF
387
pF
131
nC
40
nC
37
nC
Min.
Typ.
Max.
Unit
VDD = 50 V, ID = 60 A
RG = 4.7 VGS = 10 V
(see Figure 13)
32
ns
116
ns
VDD = 50 V, ID = 60 A,
RG = 4.7 , VGS = 10 V
(see Figure 13)
111
ns
79
ns
IDSS
IGSS
Zero gate voltage
Drain current (VGS = 0)
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 50 V, ID = 120 A,
VGS = 10 V
(see Figure 14)
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
4/18
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
DocID026168 Rev 1
STB120N10F4, STP120N10F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
120
ISDM
(1)
Source-drain current (pulsed)
390
VSD
(2)
Forward on voltage
ISD = 60 A, VGS = 0
1.2
trr
Reverse recovery time
72
ns
Qrr
Reverse recovery charge
215
nC
IRRM
Reverse recovery current
ISD = 120 A, VDD = 80 V
di/dt = 100 A/s,
Tj = 150 C
(see Figure 15)
ISD
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
DocID026168 Rev 1
5/18
18
Electrical characteristics
2.1
STB120N10F4, STP120N10F4
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
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LV
D
UH
D 6 RQ
V
L
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WK 5
LQ D[
LRQ P
DW E\
U
H
G
2S LWH
/LP
PV
PV
7M &
7F &
PV
6LQOJH
SXOVH
9'6 9
Figure 4. Output characteristics
Figure 5. Transfer characteristics
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9*6 9
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9'6 9
9
9
9
9
9'6 9
Figure 6. Gate charge vs gate-source voltage
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9*6
9
9'' 9
,' $
9*6 9
Figure 7. Static drain-source on-resistance
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5'6 RQ
P2KP
9*6 9
6/18
4J Q&
DocID026168 Rev 1
,' $
STB120N10F4, STP120N10F4
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Source-drain diode forward
characteristics
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&
S)
AM15511v1
VSD
(V)
TJ=-50C
&LVV
0.9
0.8
TJ=25C
0.7
TJ=150C
0.6
&RVV
&UVV
9'6 9
Figure 10. Normalized gate threshold voltage vs
temperature
AM15508v1
VGS(th)
(norm)
ID=250 A
0.5
0.8
1.5
0.6
0.4
0.5
25
75
125
60
80
100
ISD(A)
AM15509v1
RDS(on)
(norm)
2.5
-25
40
Figure 11. Normalized on-resistance vs
temperature
1.2
0.2
-75
20
TJ(C)
0
-75
VGS=10 V
ID=60 A
-25
25
75
125
TJ(C)
Figure 12. Normalized V(BR)DSS vs temperature
AM15510v1
V(BR)DSS
(norm)
ID=250 A
1.15
1.1
1.05
1
0.95
0.9
0.85
-75
-25
25
75
125
TJ(C)
DocID026168 Rev 1
7/18
18
Test circuits
STB120N10F4, STP120N10F4
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47k
1k
100nF
3.3
F
2200
RL
IG=CONST
VDD
VGS
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
AM01469v1
Figure 16. Unclamped inductive load test circuit
D
G
D.U.T.
FAST
DIODE
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/18
DocID026168 Rev 1
10%
AM01473v1
STB120N10F4, STP120N10F4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
DocID026168 Rev 1
9/18
18
Package mechanical data
4.1
STB120N10F4, STP120N10F4
D2PAK, STB120N10F4
Figure 19. DPAK (TO-263) drawing
0079457_T
10/18
DocID026168 Rev 1
STB120N10F4, STP120N10F4
Package mechanical data
Table 8. DPAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
4.40
4.60
A1
0.03
0.23
0.70
0.93
b2
1.14
1.70
0.45
0.60
c2
1.23
1.36
8.95
9.35
D1
7.50
10
E1
8.50
10.40
2.54
e1
4.88
5.28
15
15.85
J1
2.49
2.69
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0
DocID026168 Rev 1
11/18
18
Package mechanical data
STB120N10F4, STP120N10F4
Figure 20. DPAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimension are in millimeters
12/18
DocID026168 Rev 1
Footprint
STB120N10F4, STP120N10F4
4.2
Package mechanical data
TO-220, STP120N10F4
Figure 21. TO-220 type A drawing
BW\SH$B5HYB7
DocID026168 Rev 1
13/18
18
Package mechanical data
STB120N10F4, STP120N10F4
Table 9. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
4.40
4.60
0.61
0.88
b1
1.14
1.70
0.48
0.70
15.25
15.75
D1
14/18
Max.
1.27
10
10.40
2.40
2.70
e1
4.95
5.15
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
3.75
3.85
2.65
2.95
DocID026168 Rev 1
STB120N10F4, STP120N10F4
Packaging mechanical data
Packaging mechanical data
Figure 22. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
E
F
K0
W
B0
A0
P1
D1
User direction of feed
Bending radius
User direction of feed
AM08852v2
DocID026168 Rev 1
15/18
18
Packaging mechanical data
STB120N10F4, STP120N10F4
Figure 23. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. DPAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
16/18
Dim.
Min.
Max.
A0
10.5
10.7
B0
15.7
15.9
1.5
1.5
1.6
12.8
D1
1.59
1.61
20.2
1.65
1.85
24.4
11.4
11.6
100
K0
4.8
5.0
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
50
0.25
0.35
23.7
24.3
DocID026168 Rev 1
Min.
Max.
330
13.2
26.4
30.4
STB120N10F4, STP120N10F4
Revision history
Revision history
Table 11. Document revision history
Date
Revision
02-Apr-2014
Changes
First release.
DocID026168 Rev 1
17/18
18
STB120N10F4, STP120N10F4
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