Department of Electronics and Telecommunication Engg.
Lecture Plan for EC 25XXX, B.Tech. II year
                             ELECTRONIC DEVICES
                            Session: June – Dec’ 2024
Lecture No.   Topic Covered                                                                 Remark
   1.         Unit1: Introduction to semiconductor Physics, Bohr’s atomic structure,
   2.         E-K diagrams, Periodic Lattice, energy bands in Intrinsic and Extrinsic
              semiconductor, equilibrium carrier concentration
   3.         Direct and indirect band-gap semiconductors carrier transport, drift and
              diffusion current, mobility and resistivity
   4.         Generation & recombination of carrier, Poisson & continuity equation
   5.         Transient and diffusion capacitances, Switching time, Hall effect
   6.         Unit 2. Small signal switching model of P-N junction diode, Avalanche
              and Zener breakdown
   7.         Zener diode application as a voltage regulator
   8.         PN junction diode circuits and applications: clipper
   9.         Clamper and voltage multipliers
   10.        Rectifiers, construction, working, characteristics and applications: LED,
              photodiode
   11.        construction, working, characteristics and applications: tunnel diode
   12.        Schottky diode, Solar cell, thermistors
   13.        Unit 3. Charge transport in BJT, Minority carrier distribution and
              terminal currents
   14.        Base width modulation, Ebers Moll model
   15.        I-V characteristics for CB, CE and CC configurations, concept of load line
   16.        Transistor Biasing circuit design: Fixed biased configuration, Emitter-bias
              configuration, Voltage divider bias configuration, collector feedback
              configuration, Emitter follower configuration
   17.        Stability concepts. Thermal runaway
   18.        Transistor based regulated power supply design
   19.        Unit 4. Construction & characteristics of p-channel, n-channel FET/JFET
   20.        Constructions, characteristics of Depletion type MOSFET, MOS
              Capacitance
   21.        Constructions, characteristics of Enhancement type MOSFET
   22.        CMOS: constructions, characteristics and applications
   23.        Source follower, common-gate. Channel length modulation
   24.        JFET Biasing: Fixed-bias, Self-bias, voltage divider
   25.        Unit 5. Concepts of Integrated circuits and their fabrications
   26.        Introduction of Surface mount devices (SMDs)
   27.        Silicon controlled rectifiers: construction, operation, characteristics
   28.        SCR applications; DIAC: construction, operation, characteristics
   29.        TRIAC, UJT: construction, operation, characteristics
   30.        Construction, operation, characteristics of Phototransistor; Opto-isolator
   31.        Seven segments- common anode, common cathode and Liquid Crystal
              Displays.