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Electronic Devices

The document outlines a lecture plan for the B.Tech. II year course on Electronic Devices for the session June - December 2024. It details the topics to be covered, including semiconductor physics, diode applications, transistor characteristics, FETs, and integrated circuits. Each lecture is numbered and includes specific subject matter to be taught, along with remarks on the content.
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0% found this document useful (0 votes)
25 views1 page

Electronic Devices

The document outlines a lecture plan for the B.Tech. II year course on Electronic Devices for the session June - December 2024. It details the topics to be covered, including semiconductor physics, diode applications, transistor characteristics, FETs, and integrated circuits. Each lecture is numbered and includes specific subject matter to be taught, along with remarks on the content.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Department of Electronics and Telecommunication Engg.

Lecture Plan for EC 25XXX, B.Tech. II year


ELECTRONIC DEVICES
Session: June – Dec’ 2024
Lecture No. Topic Covered Remark
1. Unit1: Introduction to semiconductor Physics, Bohr’s atomic structure,
2. E-K diagrams, Periodic Lattice, energy bands in Intrinsic and Extrinsic
semiconductor, equilibrium carrier concentration
3. Direct and indirect band-gap semiconductors carrier transport, drift and
diffusion current, mobility and resistivity
4. Generation & recombination of carrier, Poisson & continuity equation
5. Transient and diffusion capacitances, Switching time, Hall effect
6. Unit 2. Small signal switching model of P-N junction diode, Avalanche
and Zener breakdown
7. Zener diode application as a voltage regulator
8. PN junction diode circuits and applications: clipper
9. Clamper and voltage multipliers
10. Rectifiers, construction, working, characteristics and applications: LED,
photodiode
11. construction, working, characteristics and applications: tunnel diode
12. Schottky diode, Solar cell, thermistors
13. Unit 3. Charge transport in BJT, Minority carrier distribution and
terminal currents
14. Base width modulation, Ebers Moll model
15. I-V characteristics for CB, CE and CC configurations, concept of load line
16. Transistor Biasing circuit design: Fixed biased configuration, Emitter-bias
configuration, Voltage divider bias configuration, collector feedback
configuration, Emitter follower configuration
17. Stability concepts. Thermal runaway
18. Transistor based regulated power supply design
19. Unit 4. Construction & characteristics of p-channel, n-channel FET/JFET
20. Constructions, characteristics of Depletion type MOSFET, MOS
Capacitance
21. Constructions, characteristics of Enhancement type MOSFET
22. CMOS: constructions, characteristics and applications
23. Source follower, common-gate. Channel length modulation
24. JFET Biasing: Fixed-bias, Self-bias, voltage divider
25. Unit 5. Concepts of Integrated circuits and their fabrications
26. Introduction of Surface mount devices (SMDs)
27. Silicon controlled rectifiers: construction, operation, characteristics
28. SCR applications; DIAC: construction, operation, characteristics
29. TRIAC, UJT: construction, operation, characteristics
30. Construction, operation, characteristics of Phototransistor; Opto-isolator
31. Seven segments- common anode, common cathode and Liquid Crystal
Displays.

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