COURSE OUTLINE
ELE-ANE-121
ANALOGUE ELECTRONICS I
E. KACHUMA
INTRODUCTION
This module introduces students to circuits that process continuous signals. The
module discusses the Bipolar Junction Transistor (BJT) and the Field Effect Transistor
(FET) as major building blocks for electronic systems.
It explains the behaviour of the transistors and associated networks, their models, and
application in electronics systems. The module also introduces the operational
amplifier as a versatile integrated circuit (IC) and how it can be used in signal
processing.
INTRODUCTION…… cont’d
MODULE OBJECTIVES
On completion of this module the student should be able to:
a) Describe the flow of charges in semiconductor materials.
b) Discuss the construction and operation of semiconductor devices.
c) Analyse equivalent circuits of diodes.
d) Determine operating points of transistors.
INDICATIVE CONTENT
a) Semiconductor Physics
Semiconductors: bonds, energy gap, temperature effects, electron-hole pair
generation, electron-volt, ionization, shells, intrinsic and extrinsic
semiconductor materials, P-type and N-type semiconductor materials, the PN
junction and its properties – barrier potential, depletion layer, forward and
reverse biasing and IV characteristics.
b) Semiconductor Diodes
Ideal diode, diode equivalent circuits, transition and diffusion capacitance,
Zener diode, light emitting diodes (LED), photo diode, photo voltaic PN
junction and their symbols, simple Zener voltage regulator. Conduct
laboratory on driving a 7-segment LED display.
INDICATIVE CONTENT….cont’d
c) Bipolar Junction Transistors – NPN and PNP
Transistor construction and operation, input and output characteristics.
Conditions for operating as amplifiers.
d) BJT Biasing
The output characteristics and the active region and the need for biasing.
Fixed bias configuration, Emitter stabilised bias configuration and the fixed
bias configuration.
INDICATIVE CONTENT….cont’d
e) Field Effect Transistor
Construction and operation, transfer and output characteristics (N – channel
and P – channel) of Enhancement type Metal Oxide Semiconductor Field Effect
Transistor (E-MOSFET), Depletion type Metal Oxide Semiconductor Field Effect
Transistor (D-MOSFET), and Junction Field Effect Transistor (JFET).
DC analysis: common source. Basic MOSFET applications: switch, digital logic
gates and amplifier.
f) Thyristors
Construction and operation of Silicon Controlled Rectifiers (SCR), DIACs,
TRIACs.
g) Laboratories
Conduct labs on biasing of FETs and BJTs
ASSESSMENT
Examination: 60%
Coursework : 40%
2 Assignments
1 Mid-semester test
TEACHING AND LEARNING METHODS
a) Lectures
b) Tutorials
c) Labs
d) Group discussions
PRESCRIBED READING TEXT
Simon M. Sze, Yiming Li, Kwok K. Ng., (2021). Physics of Semiconductor
Devices (4th ed), Wiley.
Albert P. Malvino, David J. Bates, Patrick E. Hoppe., (2021). Electronic
Principles (9th ed), McGraw-Hill.
Boylestad R. and Nashelsky L., (2013). Electronic Devices and Circuit Theory.
(11th ed), Prentice Hall.
OTHER LEARNING RESOURCES
Neamen D.A, Biswas D., (2017). Semiconductor Physics and Devices. (4th ed.).
McGraw-Hill Education India Pvt Ltd.
Muhammad H. Rashid., (2016) Microelectronic Circuits Analysis and Design
(3rd ed). Cengage Learning.
Jaeger, R., and Blalock, T. (2015). Microelectronic Circuit Design (5th ed.).
McGraw-Hill.
THANK YOU!
