Silicon FS Trench IGBT
CRG60T60AK3HD
General Description ： VCES 650 V
Using HUAJING's proprietary trench design and advanced Field IC 60 A
Stop (FS) technology, offering superior conduction and switching Ptot （TC=25℃） 403 W
performances. RoHS Compliant. VCE(sat) 1.85 V
TO-247
Features：
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage：
VCE(sat),TYP=1.85V @IC=60A,VGE=15V ；
Applications
● Welding
● Solar Inverter
● UPS
Package Parameters
Type Marking Package Packing
CRG60T60AK3HD G60T60AK3HD TO-247 Tube
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Absolute Maximum Ratings （TC= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VCES Collector-Emitter Voltage 650 V
Gate- Emitter Voltage ±20
VGES V
Gate- Emitter Voltage （tp≤10us,D<0.01） ±30
Collector Current @TC = 25 °C 120
IC A
Collector Current @TC = 100 °C 60
ICMa1 Pulsed Collector Current @TC=25℃ 180 A
Diode Continuous Forward Current @T C = 100 °C 60 A
IF
Diode Continuous Forward Current @T C = 25 °C 120 A
IFM Diode Maximum Forward Current 180 A
Power Dissipation @ TC = 25°C 403
PD W
Power Dissipation @T C = 100 °C 161
TJ Operating Junction -40～150 ℃
Tstg Storage Temperature Range -55～150 ℃
TL Maximum Temperature for Soldering 270 ℃
a1：Repetitive rating; pulse width limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction to case for IGBT -- 0.31 ℃/W
RθJC Thermal Resistance, Junction to case for Diode -- 0.54 ℃/W
RθJA Thermal Resistance, Junction to Ambient -- 40.1 ℃/W
Electrical Characteristics of the IGBT（TC= 25℃ unless otherwise specified）：
SPEC Un
Symbol Parameter Test Conditions
Min. Typ. Max. its
OFF Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage VGE=0V,ICE=1mA 650 -- -- V
ICES Collector-Emitter Leakage Current VGE=0V,VCE=650V -- -- 2.0 mA
IGES(F) Gate to Emitter Forward Leakage VGE=+20V -- -- +250 nA
IGES(R) Gate to Source Reverse Leakage VGE =-20V -- -- -250 nA
ON Characteristics
VCE(sat) Collector-Emitter Saturation Voltage IC=60A ,VGE=15V -- 1.85 2.4 V
VGE(th) Gate Threshold Voltage IC=1mA ,VCE=VGE 4.0 5.4 7.0 V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Cies Input Capacitance -- 3398 --
VCE=30V,VGE=0V
Coes Output Capacitance -- 224 -- pF
f=1MHz
Cres Reverse Transfer Capacitance -- 44 --
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CRG60T60AK3HD
Switching Characteristics
td(on) Turn-on Delay Time -- 66 --
tr Rise Time -- 124 --
VCE=400V,IC=60A, ns
td(off) Turn-Off Delay Time -- 152 --
Rg=10Ω,VGE=15V,
tf Fall Time -- 51 --
Inductive
Eon Turn-On Switching Loss Load,TJ=25℃ -- 4.79 --
Eoff Turn-Off Switching Loss -- 1.39 -- mJ
Ets Total Switching Loss -- 6.18 --
td(on) Turn-on Delay Time -- 66 --
tr Rise Time -- 112 --
ns
td(off) Turn-Off Delay Time VCE=400V,IC=60A, -- 167 --
Rg=10Ω,VGE=15V,
tf Fall Time -- 50 --
Inductive
Eon Turn-On Switching Loss Load,TJ=125℃ -- 4.73 --
Eoff Turn-Off Switching Loss -- 1.5 -- mJ
Ets Total Switching Loss -- 6.23 --
Qg Total Gate Charge -- 117 --
VCE=400V,IC=60A,
Qge Gate to Emitter Charge -- 35 -- nC
VGE=15V
Qgc Gate to Collector Charge -- 47 --
Electrical Characteristics of the DIODE（TC= 25℃ unless otherwise specified）：
VF Diode Forward Voltage IF=60A -- 1.6 2.0 V
trr Reverse Recovery Time -- 57 -- ns
IF=60A
Irrm Reverse Recovery Current -- 4.75 -- A
di/dt=200A/uS
Qrr Reverse Recovery Charge -- 135 -- nC
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CRG60T60AK3HD
Typical Performance Characteristics
Figure 1.Output Characteristics Figure 2.Output Characteristics
Figure 3.Saturation Voltage Characteristics Figure 4.Saturation Voltage –TC Characteristics
Figure 5.Capacitance Characteristics Figure 6.Switching Loss-RG Characteristics
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Figure 7.Switching Time-RG Characteristics Figure 8.Switching Time-RG Characteristics
Figure 9.Switching Loss-Tc Characteristics Figure 10. Turn-Off Time-Tc Characteristics
Figure 11. Turn-On Time-Tc Characteristics Figure 12.Switching Loss-IC Characteristics
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Figure 13.Switching Loss-IC Characteristics Figure 14. Turn-Off Time-Ic Characteristics
Figure 15.Diode Forward Characteristics Figure 16. Collector Current-Tc Characteristics
Figure 17.Forward Bias Safe Operating Area Figure 18.Gage Charge Characteristics
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CRG60T60AK3HD
D=1
ZθJC,Thermal Response[℃/W]
0.1 0.5
0.2
0.1
0.01 0.05
0.02
0.01
0.001
Single Pulse
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
Figure 19.IGBT Transient Thermal Impedance
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Package Information
规范(mm)
项 目
MIN MAX
A 4.6 5.2
A1 2,2 2.6
B 0.9 1.4
B1 1.75 2.35
B2 1.75 2.15
B3 2.8 3.35
B4 2.8 3.15
C 0.5 0.7
D 20.60 21.30
D1 16 18
E 15.5 16.10
E1 13 14.7
E2 3.80 5.3
E3 0.8 2.60
e 5.2 5.7
L 19 20.5
L1 3.9 4.6
ΦP 3.3 3.70
Q 5.2 6.00
S 5.8 6.6
TO-247 Package
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CRG60T60AK3HD
The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP
Limit ≤ ≤ ≤ ≤ ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.01% 0.1% 0.1% 0.1% 0.1%
Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：Means the hazardous material is under the criterion of 2011/65/EU.
×：Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range of
Eurogroup’s RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the
device, even the permanent failure, which may affect the dependability of the machine. It is
suggested to be used under 80 percent of the maximum ratings of the device.
2. When installing the heat sink, please pay attention to the torsional moment and the
smoothness of the heat sink.
3. IGBTs is the device which is sensitive to the static electricity, it is necessary to protect the
device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail：214061 https://www.crmicro.com
Tel: 0510-85807228 Fax: 0510-85800864
Marketing Part： Post：214061 Tel / Fax：0510-85807228-3663/5508
0510-85800360（Fax）
Application and Service：Post：214061 Tel / Fax：0510-85807228-3399 / 2227
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