FDN304P

January 2001

FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET

General Description Features

This P-Channel 1.8V specified MOSFET uses • –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management RDS(ON) = 70 mΩ @ VGS = –2.5 V
applications. RDS(ON) = 100 mΩ @ VGS = –1.8 V

Applications • Fast switching speed

• Battery management • High performance trench technology for extremely

• Load switch low RDS(ON)

• Battery protection • SuperSOTTM -3 provides low RDS(ON) and 30% higher

power handling capability than SOT23 in the same
footprint

D D

S
G S

SuperSOT -3
TM G

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current – Continuous (Note 1a) –2.4 A
– Pulsed –10
PD Maximum Power Dissipation (Note 1a) 0.5 W
(Note 1b) 0.46
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
304 FDN304P 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDN304P Rev C(W)

 Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
∆BVDSS Breakdown Voltage Temperature ID = –250 µA,Referenced to 25°C –13 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.8 –1.5 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA,Referenced to 25°C 3 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –4.5 V, ID = –2.4 A 36 52 mΩ
On–Resistance VGS = –2.5 V, ID = –2.0 A 47 70
VGS = –1.8V, ID = –1.8 A 65 100
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A
gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 12 S

Dynamic Characteristics
Ciss Input Capacitance VDS = –10 V, V GS = 0 V, 1312 pF
Coss Output Capacitance f = 1.0 MHz 240 pF
Crss Reverse Transfer Capacitance 106 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = –10 V, ID = –1 A, 15 27 ns
tr Turn–On Rise Time VGS = –4.5 V, RGEN = 6 Ω 15 27 ns
td(off) Turn–Off Delay Time 40 64 ns
tf Turn–Off Fall Time 25 40 ns
Qg Total Gate Charge VDS = –10 V, ID = –2.4 A, 12 20 nC
Qgs Gate–Source Charge VGS = –4.5 V 2 nC
Qgd Gate–Drain Charge 2 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A
VSD Drain–Source Diode Forward VGS = 0 V, IS = –0.42 (Note 2) –0.6 –1.2 V
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 250°C/W when mounted on a b) 270°C/W when mounted on a

0.02 in2 pad of 2 oz. copper. minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDN304P Rev C(W)

 FDN304P
Typical Characteristics

15 4
VGS = -4.5V
-3.0V -2.5V 3.5
12
-ID, DRAIN CURRENT (A)

-2.0V VGS = -1.5V

3

9 2.5
-1.8V
-1.8V
2
6 -2.0V
1.5
-2.5V
-1.5V -3.0V
3
1 -4.5V

0.5
0
0 3 6 9 12 15
0 0.5 1 1.5 2 2.5
-VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5 0.14
ID = -2.4A ID = -1.2 A
1.4
VGS = -4.5V 0.12
1.3
0.1
1.2

1.1 0.08
o
1 TA = 125 C
0.06
0.9 o
TA = 25 C
0.8 0.04

0.7
0.02
-50 -25 0 25 50 75 100 125 150
1 2 3 4 5
o
TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

15 100
VDS = - 5V VGS = 0V
TA = o
25 C 10
12
o
-55 C
1 o
TA = 125 C
9
o
0.1 25 C

6 o
-55 C
0.01

3 0.001

0 0.0001

0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN304P Rev C(W)

 FDN304P
Typical Characteristics

5 2100
VDS = -5V f = 1MHz
ID = -2.4A
-10V 1800 VGS = 0 V
4 CISS
-15V 1500

3
1200

900
2

600
1 COSS
300
CRSS
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20

Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 20
SINGLE PULSE
RθJA = 270°C/W
RDS(ON) TA = 25°C
10 1ms 15
10ms

100ms
1 10
1s
10s
VGS =-4.5V DC
0.1 SINGLE PULSE 5
o
RθJA = 270 C/W
o
TA = 25 C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000

-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
D = 0.5

0.2 RθJA(t) = r(t) + RθJA

0.1 RθJA = 270 °C/W
0.1 0.05
0.02
0.01
P(pk)
t1
0.01 t2
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDN304P Rev C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FASTr™ OPTOLOGIC  SMART START™ VCX™
Bottomless™ FRFET™ OPTOPLANAR™ SPM™
CoolFET™ GlobalOptoisolator™ PACMAN™ Stealth™
CROSSVOLT™ GTO™ POP™ SuperSOT™-3
DOME™ HiSeC™ Power247™ SuperSOT™-6
EcoSPARK™ I2C™ PowerTrench  SuperSOT™-8
E2CMOSTM ISOPLANAR™ QFET™ SyncFET™
EnSignaTM LittleFET™ QS™ TinyLogic™
FACT™ MicroFET™ QT Optoelectronics™ TruTranslation™
FACT Quiet Series™ MicroPak™ Quiet Series™ UHC™
FAST  MICROWIRE™ SILENT SWITCHER  UltraFET 

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H7