FDD6296/FDU6296

June 2004

FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench MOSFET
General Description Features
This N-Channel MOSFET has been designed • 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional RDS(ON) = 11.3 mΩ @ VGS = 4.5 V
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed. • Low gate charge

Applications • Fast switching

• DC/DC converter • High performance trench technology for extremely

• Power management low RDS(ON)

D
G
I-PAK G
S
D-PAK (TO-251AA)
TO-252
(TO-252) G D S
S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20
ID Continuous Drain Current @TC=25°C (Note 3) 50 A
@TA=25°C (Note 1a) 15
Pulsed (Note 1a) 100
PD Power Dissipation @TC=25°C (Note 3) 52 W
@TA=25°C (Note 1a) 3.8
@TA=25°C (Note 1b) 1.6
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity
FDD6296 FDD6296 D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6296 FDU2696 I-PAK (TO-251) Tube N/A 75

2004 Fairchild Semiconductor Corporation FDD6296/FDU6296 Rev C(W)

 FDD6296/FDU6296
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A 165 mJ
IAS Drain-Source Avalanche Current 15 A
Off Characteristics
Drain–Source Breakdown
BVDSS VGS = 0 V, ID = 250 µA 30 V
Voltage
∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 29 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
±
IGSS Gate–Body Leakage VGS =± 20 V, VDS = 0 V nA
100
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C –0.5 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 15 A 7.5 8.8 mΩ
On–Resistance VGS = 4.5 V, ID = 13 A 9.0 11.3
VGS = 10 V, ID = 15 A, TJ=125°C 9.3 15.0
gFS Forward Transconductance VDS = 5 V, ID = 15 A 58 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 1440 pF
Coss Output Capacitance f = 1.0 MHz 400 pF
Crss Reverse Transfer Capacitance 140 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, 11 19 ns
tr Turn–On Rise Time VGS = 10 V, RGEN = 6 Ω 6 11 ns
td(off) Turn–Off Delay Time 29 46 ns
tf Turn–Off Fall Time 13 23 ns
Qg Total Gate Charge VDS = 15V, ID = 15 A, VGS = 10 V 22.5 31.5 nC
Qg Total Gate Charge VDS = 15V, ID = 15 A, 12.2 17 nC
VGS = 5 V
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge 3.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A
Drain–Source Diode Forward
VSD VGS = 0 V, IS = 3.2 A (Note 2) 0.74 1.2 V
Voltage
trr Diode Reverse Recovery Time IF = 15 A, 25 nS
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs 13 nC

FDD6296/FDU6296 Rev. C(W)

 FDD6296/FDU6296
Electrical Characteristics (cont’d)

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40°C/W when mounted on b) RθJA = 96°C/W when mounted

a 1in2 pad of 2 oz copper on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as: PD where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package
current limitation is 21A R DS(ON)

FDD6296/FDU6296 Rev. C(W)

 FDD6296/FDU6296
Typical Characteristics

100 1.8
VGS=10V 4.0V VGS = 3.5V

DRAIN-SOURCE ON-RESISTANCE
80 1.6
ID , D R A I N C U R R E N T (A)

R D S ( O N ) , N O R M A L IZE D
6.0V 4.5V
3.5V 4.0V
60 1.4
4.5V
5.0V
40 1.2
6.0V

3.0V 10V
20 1

0 0.8
0 1 2 3 4 0 20 40 60 80 100
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.8 0.025
D R A IN-SOURCE ON-RESISTANCE

ID = 50A ID = 25A
R D S ( O N ) , ON-RESISTANCE (OHM)

1.6
VGS = 10V
0.02
R D S ( O N ) , NORMALIZED

1.4

1.2 0.015
o
TA = 125 C
1
0.01
0.8 o
TA = 25 C

0.6 0.005
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
o
T J, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature Gate-to-Source Voltage

90 1000
VGS = 0V
100
IS , R E V E R S E D R A I N C U R R E N T ( A )

VDS = 10V
ID , D R A I N C U R R E N T (A)

10
60 o
TA = 125 C
1
o
o
25 C
TA =125 C 0.1
30 o o
-55 C 0.01 -55 C

o
0.001
25 C
0 0.0001
1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6296/FDU6296 Rev. C(W)

 FDD6296/FDU6296
Typical Characteristics

10 1800
ID = 15A f = 1MHz
V GS , GATE-SOURCE VOLTAGE (V)

VGS = 0 V
8 VDS = 10V

Ciss

C A P A C ITA N C E (pF)
1200
6 15V

20V
4
Coss
600

2 Crss

0 0
0 5 10 15 20 25 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000 100
RDS(ON) LIMIT
P (pk), P E A K T R A N S I E N T P O W E R ( W )
SINGLE PULSE
100 80 RθJA = 96°C/W
100µs
ID , D R A I N C U R R E N T ( A )

TA = 25°C
1ms
10ms
10 60
100ms
1s
10s
1 40
VGS = 10V DC
SINGLE PULSE
o
0.1 RθJA = 96 C/W 20
o
TA = 25 C

0.01 0
0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5 RθJA(t) = r(t) * RθJA

RθJA = 96 °C/W
0.2
THERMAL RESISTANCE

0.1 0.1

0.05
P(pk)
0.02
t1
0.0
t2
0.01 TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE

0.001
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6296/FDU6296 Rev. C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I11