January 2000

FDS6690
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description

Features

This N Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching
PWM controllers.
The MOSFET features faster switching and lower gate charge
than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.

SuperSOTTM-6

SOT-23

D
D
D

SO-8

SuperSOTTM-8

S
FD 9 0
66

pin 1

Absolute Maximum Ratings

10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V

RDS(ON) = 0.0200 @ VGS = 4.5 V.

Optimized for use in switching DC/DC converters with

PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).

SO-8

SOT-223

SOIC-16

TA = 25oC unless other wise noted

Symbol

Parameter

FDS6690

VDSS

Drain-Source Voltage

30

VGSS

Gate-Source Voltage

20

ID

Drain Current - Continuous

10

(Note 1a)

- Pulsed
PD

TJ,TSTG

Power Dissipation for Single Operation

Units

50
(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

Operating and Storage Temperature Range

-55 to 150

THERMAL CHARACTERISTICS
RJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

C/W

RJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

C/W

1998 Fairchild Semiconductor Corporation

FDS6690 Rev.C

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

BVDSS/TJ Breakdown Voltage Temp. Coefficient

IDSS

Zero Gate Voltage Drain Current

30

VGS = 0 V, I D = 250 A
o

V
mV /oC

21

ID = 250 A, Referenced to 25 C
VDS = 24 V, VGS = 0 V
TJ = 55C

10

IGSSF

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

100

nA

IGSSR

Gate - Body Leakage, Reverse

VGS = -20 V, VDS= 0 V

-100

nA

ON CHARACTERISTICS
VGS(th)

(Note 2)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

VGS(th)/TJ

Gate Threshold Voltage Temp. Coefficient

ID = 250 A, Referenced to 25 C

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V, I D = 10 A

mV /oC

-4.5

TJ =125C
VGS = 4.5 V, I D = 9 A

0.011

0.0135

0.018

0.023

0.017

0.02

50

ID(ON)

On-State Drain Current

VGS = 10 V, VDS = 5 V

gFS

Forward Transconductance

VDS = 10 V, I D= 10 A

27

A
S

VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

1340

pF

340

pF

125

pF

DYNAMIC CHARACTERISTICS
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

(Note 2)

tD(on)

Turn - On Delay Time

VDS= 15 V, I D= 1 A

12

22

ns

tr

Turn - On Rise Time

VGS = 10 V , RGEN = 6

13

24

ns

tD(off)

Turn - Off Delay Time

38

60

ns

tf

Turn - Off Fall Time

Qg

Total Gate Charge

VDS = 15 V, I D = 10 A,

Qgs

Gate-Source Charge

VGS = 5 V

Qgd

Gate-Drain Charge

10

18

ns

13

18

nC

nC

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 2.1 A

(Note 2)

0.73

2.1

1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by
design while RCA is determined by the user's board design.

a. 50OC/W on a 0.5 in2

pad of 2oz copper.

b. 105OC/W on a 0.02 in2

pad of 2oz copper.

c. 125OC/W on a 0.003 in2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

FDS6690 Rev.C

Typical Electrical Characteristics

R DS(on) , NORMALIZED

VGS = 10V 6.0V

5.0V
4.5V
40
4.0V

30

20

3.5V
10

0.5

1.5

DRAIN-SOURCE ON-RESISTANCE

ID , DRAIN-SOURCE CURRENT (A)

50

2.5

VGS = 3.5V
2.5

4.5V
5.0V

1.5

5.5V
7.0V
10V

0.5

4.0V

10

20

VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

R DS(ON) , ON-RESISTANCE (OHM)

R DS(ON) , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I D = 5A

VGS = 10 V

1.4
1.2
1
0.8

-25

25

50

75

100

125

0.04

0.03

0.01

150

TA = 125C

0.02

TA = 25C

TJ , JUNCTION TEMPERATURE (C)

Figure 3. On-Resistance Variation

Temperature.

50

20

10

V GS = 0V

10
1

TA= 125C
25C

0.1

-55C
0.01
0.001
0.0001
0

0.2

0.4

SD

Figure 5 . Transfer Characteristics.

10

50

30

VGS , GATE TO SOURCE VOLTAGE (V)

Figure 4 . On Resistance Variation with

Gate-to-Source Voltage.

with

IS , REVERSE DRAIN CURRENT (A)

I D, DRAIN CURRENT (A)

40

V GS , GATE TO SOURCE VOLTAGE (V)

TA = -55C
25C
125C

VDS = 5V

50

0.05

I D = 10 A

0.6
-50

40

Figure 2. On-Resistance Variation with

Drain Current and Gate
Voltage.

1.8
1.6

30

I D , DRAIN CURRENT (A)

0.6

0.8

1.2

1.4

, BODY DIODE FORWARD VOLTAGE (V)

Figure 6 . Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6690 Rev.C

Typical Electrical And Thermal Characteristics

2000

V DS = 5V

I D = 10A

C iss

10V

15V

CAPACITANCE (pF)

V GS , GATE-SOURCE VOLTAGE (V)

10

500

C oss
200

1000

10

15

20

f = 1 MHz
V GS = 0V

Figure 7. Gate Charge Characteristics.

DS

10

30

, DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics.

30

100
IT
LIM
N)
S(O
D
R

100
us
1m
s

10

10m
s
100
ms
1s
10s
DC

0.5

VGS = 10V
SINGLE PULSE
RJA =125C/W
TA = 25C

0.1

0.01
0.05

0.1

0.2
DS

20
15
10
5

0.5
V

SINGLE PULSE
R JA =125 C/W
TA = 25C

25

POWER (W)

30
ID , DRAIN CURRENT (A)

0.5
V

Q g , GATE CHARGE (nC)

10

20 30

0
0.01

50

0.1

0.5

10

50 100

300

SINGLE PULSE TIME (SEC)

, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

C rss

100
0.1

25

Figure 10. Single Pulse Maximum Power

Dissipation.

1
0.5
0.2
0.1
0.05
0.02
0.01

D = 0.5
0.2

R JA (t) = r(t) * R JA
R JA = 125C/W

0.1
0.05
0.02

P(pk)

0.01

t1
Single Pulse

0.005
0.002
0.001
0.0001

t2

TJ - TA = P * R JA(t)
Duty Cycle, D = t1 /t2
0.001

0.01

0.1

10

100

300

t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve .

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6690 Rev.C

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8

ACEx
CoolFET
CROSSVOLT
E2CMOSTM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC

SyncFET
TinyLogic
UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D

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