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Ec3361-Set 2

The document outlines the B.E Degree Practical Examinations for the Electronic Devices and Circuits Laboratory at Solamalai College of Engineering, detailing various experiments to be conducted. Each experiment focuses on different electronic components and their characteristics, including diodes, transistors, and amplifiers, with specific tasks such as determining resistance, plotting characteristics, and calculating gains. The examination is structured to assess students' practical skills over a 3-hour period, with a total of 100 marks available.

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38 views2 pages

Ec3361-Set 2

The document outlines the B.E Degree Practical Examinations for the Electronic Devices and Circuits Laboratory at Solamalai College of Engineering, detailing various experiments to be conducted. Each experiment focuses on different electronic components and their characteristics, including diodes, transistors, and amplifiers, with specific tasks such as determining resistance, plotting characteristics, and calculating gains. The examination is structured to assess students' practical skills over a 3-hour period, with a total of 100 marks available.

Uploaded by

suganthi mtech
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Solamalai College of Engineering – Madurai

(An Autonomous Institution)


B.E DEGREE PRACTICAL EXAMINATIONS, NOV/DEC - 2024
(Regulations- R(AU)-2021)
EC3361 – ELECTRONIC DEVICES AND CIRCUITS LABORATORY

(Regulation 2021)

Time : 3 Hours Answer any one Question Max. Marks 100

Aim/Principle/ Tabulation Calculation & Viva- Record Total


Apparatus /Circuit /Program Results Voce
required/Procedure /Drawing
20 30 30 10 10 100

1. Experimentally determine the forward and reverse characteristics of PN junction diode and
Calculate the forward and reverse resistance.

2. Practically construct a circuit to determine the reverse characteristics of Zener diode and
determine the breakdown voltage.

3. Conduct an experiment to determine the line and load regulation of Zener Diode and plot the
characteristics.

4. Conduct an experiment on FWR. Plot the input/output waveforms and calculate the ripple
factor.

5. Conduct an experiment on FWR with and without capacitor filter. Plot the input/output
waveforms and calculate the ripple factor.

6. Construct a circuit using NPN transistor to experimentally determine the input & output
characteristics of CE configuration and calculate the h-parameter values from the input &
output characteristic curves.

7. Plot the drain and transfer characteristics of MOSFET by conducting a suitable experiment.

8. Design and construct a BJT common emitter amplifier using voltage divider bias for the following
specifications : Vcc = 12volts, Ic = 2mA, β = 150.Calculate the gain and plot the
frequency response.

9. Construct a BJT common base amplifier using voltage divider bias for the following
specifications : Vcc = 12volts, Ic = 2mA, β = 150. Calculate the gain and plot the
frequency response .

10. Construct a BJT common collector amplifier using voltage divider bias for the following
specifications :. Vcc = 12volts, Ic = 2mA, β = 150. Calculate the gain and plot the
frequency response .

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11. Construct a common source amplifier circuit and calculate gain and plot the frequency
response.

12. Construct an amplifier circuit to find the difference between two inputs using two
matched transistor and measure its CMRR.

13. Construct a Cascode amplifier using BJT and measure its gain and plot the frequency
response.

14. Construct the power amplifier circuit and obtain the corresponding waveform.

15. Construct a BJT emitter follower amplifier using voltage divider bias. Calculate the gain,
bandwidth, gain bandwidth product and plot the frequency response .

INTERNAL EXAMINER EXTERNAL EXAMINER

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