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Electronic Devices Lab Exam Guide

The document outlines the practical examination for the EC3361 Electronic Devices and Circuits Laboratory for B.E/B.Tech students, scheduled for November/December 2022. It includes a list of experiments to be conducted, such as determining characteristics of diodes and transistors, constructing various amplifier circuits, and calculating relevant parameters. Each experiment is assigned a maximum mark of 100, with specific criteria for evaluation.

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suganthi mtech
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26 views2 pages

Electronic Devices Lab Exam Guide

The document outlines the practical examination for the EC3361 Electronic Devices and Circuits Laboratory for B.E/B.Tech students, scheduled for November/December 2022. It includes a list of experiments to be conducted, such as determining characteristics of diodes and transistors, constructing various amplifier circuits, and calculating relevant parameters. Each experiment is assigned a maximum mark of 100, with specific criteria for evaluation.

Uploaded by

suganthi mtech
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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B.E / B.Tech.

PRACTICAL END SEMESTER EXAMINATIONS, NOVEMBER/DECEMBER 2022

Third Semester
EC3361 – ELECTRONIC DEVICES AND CIRCUITS LABORATORY

(Regulation 2021)

Time : 3 Hours Answer any one Question Max. Marks 100

Aim/Principle/ Tabulation Calculation & Viva- Record Total


Apparatus /Circuit /Program Results Voce
required/Procedure /Drawing
20 30 30 10 10 100

1. Experimentally determine the forward and reverse characteristics of PN junction diode


and Calculate the forward and reverse resistance. ( 100 )

2. Practically construct a circuit to determine the reverse characteristics of Zener diode and
determine the breakdown voltage. ( 100 )

3. Conduct an experiment to determine the line and load regulation of Zener Diode and plot
the characteristics. ( 100 )

4. Conduct an experiment on FWR. Plot the input/output waveforms and calculate the
ripple factor. (100 )

5. Conduct an experiment on FWR with and without capacitor filter. Plot the input/output
waveforms and calculate the ripple factor. ( 100 )

6. Construct a circuit using NPN transistor to experimentally determine the input & output
characteristics of CE configuration and calculate the h-parameter values from the input &
output characteristic curves. (100 )

7. Plot the drain and transfer characteristics of MOSFET by conducting a suitable


experiment. ( 100 )

8. Design and construct a BJT common emitter amplifier using voltage divider bias for the
following specifications : Vcc = 12volts, Ic = 2mA, β = 150.Calculate the gain and plot the
frequency response. (100 )

9. Construct a BJT common base amplifier using voltage divider bias for the following
specifications : Vcc = 12volts, Ic = 2mA, β = 150. Calculate the gain and plot the
frequency response . (100 )

10. Construct a BJT common collector amplifier using voltage divider bias for the following
specifications :. Vcc = 12volts, Ic = 2mA, β = 150. Calculate the gain and plot the
frequency response . (100 )

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11. Construct a common source amplifier circuit and calculate gain and plot the frequency
response. (100 )

12. Construct an amplifier circuit to find the difference between two inputs using two
matched transistor and measure its CMRR. (100 )

13. Construct a Cascode amplifier using BJT and measure its gain and plot the frequency
response. (100 )

14. Construct the power amplifier circuit and obtain the corresponding waveform. ( 100 )

15. Construct a BJT emitter follower amplifier using voltage divider bias. Calculate the gain,
bandwidth, gain bandwidth product and plot the frequency response . (100 )

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