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9N90L

The isc N-Channel MOSFET Transistor 9N90L has a maximum drain current of 9A and a drain-source voltage of 900V, making it suitable for general-purpose power amplification. It features fast switching speed, minimal lot-to-lot variations, and robust performance under specified conditions. The datasheet includes absolute maximum ratings, thermal characteristics, and electrical specifications, while also noting that ISC products are not intended for specialized applications without prior consultation.

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15 views2 pages

9N90L

The isc N-Channel MOSFET Transistor 9N90L has a maximum drain current of 9A and a drain-source voltage of 900V, making it suitable for general-purpose power amplification. It features fast switching speed, minimal lot-to-lot variations, and robust performance under specified conditions. The datasheet includes absolute maximum ratings, thermal characteristics, and electrical specifications, while also noting that ISC products are not intended for specialized applications without prior consultation.

Uploaded by

laboratorio fercor
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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isc N-Channel MOSFET Transistor 9N90L

·DESCRIPTION
·Drain Current ID= 9A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·APPLICATIONS
·General purpose power amplifier

·ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 900 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-continuous@ TC=25℃ 9 A

ID(puls) Pulse Drain Current 36 A

Ptot Total Dissipation@TC=25℃ 280 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


isc N-Channel MOSFET Transistor 9N90L

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 800 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3.0 5.0 V

VSD Diode Forward On-Voltage IS=9A ;VGS= 0 1.4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.5A 1.4 Ω

IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 10 µA

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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