Ch.
14 Semiconductors
Introduction
Applications - a cell phone, a smart watch, a computer or even an
LED lamp.
Electrical Conductivity –
Metals – 6.25 x 107 Sm-1
Insulators – 10-10 Sm-1
Semiconductors - 1.56 x 10-3 Sm-1
customized to have its electrical conductivity as per our
requirement.
Temperature dependence of electrical conductivity of a
semiconductor can be controlled.
 Electrical conduction in solids
 It depends on
 - temperature,
 - the number of charge carriers,
 - crystal structure,
 - types and the nature of defects present in a solid.
Conductors                       Insulators                  Semiconductors
Eg . Any metals                  Eg. Glass, wood or rubber   Eg. Silicon, germanium, gallium
                                                             arsenide, gallium nitride,
                                                             cadmium sulphide
Large number of free electrons   very small number of free   charge carriers in a
                                 electrons.                  semiconductor can be controlled
                                                             as per requirement.
Temperature dependence of electrical
conductivity of (a) metals and (b)semiconductors.
Classification of Semiconductors
Elemental semiconductors: Silicon, germanium
Compound Semiconductors: Cadmium sulphide, zinc
sulphide, etc.
Organic Semiconductors: Anthracene, doped pthalocyanines,
polyaniline
Band theory of solids, a brief introduction
• The electrons in atoms are arranged in different and
  discrete energy levels.
• According to Pauli’s exclusion principle, no two
  electrons can have the same set of quantum numbers,
  or, no two electrons with similar spin can occupy the
  same energy level. Any energy level can accommodate
  only two electrons (one with spin up state and the
  other with spin down state).
• the topmost occupied energy level is called the valence level.
  Corresponding energy band is called the valence band.
• When sufficient energy is provided to electrons from the valence band
  they are raised to higher levels. The immediately next energy level that
  electrons from valence band can occupy is called conduction level. The
  band formed by conduction levels is called conduction band.
• In a semiconductor or an insulator, their is a gap between the bottom of the
  conduction band and the top of the valence band. This is called the energy
  gap or the band gap.
• Only electrons from the valence band can be excited to the empty
  conduction band, if the thermal energy gained by these electrons is greater
  than the band gap.
• Electrons can also gain energy when an external electric field is applied to a
  solid.
• Metals – the valence band and the
  conduction band overlap and there is no band
  gap. Electrons, find it easy to gain electrical
  energy. They are easily available for
  conduction.
• Semiconductors - the band gap is fairly small.
  When excited, electrons gain energy and
  occupy energy levels in conduction band
  easily and can take part in electric conduction.
• Insulators - wide gap between valence band
  and conduction band. Therefore, electrons
  find it very difficult to gain sufficient energy
  and occupy energy levels in the conduction
  band.
   Intrinsic Semiconductor
• A pure semiconductor such as pure silicon or pure germanium is called an
  intrinsic semiconductor.
• At absolute zero temperature, all valence electrons are tightly bound to
  respective atoms and the covalent bonds are complete. No conduction.
• At room temperature, a few covalent bonds are broken due to thermal
  agitation and some valence electrons can gain energy. A valence electron is
  moved to the conduction band.
• It creates a vacancy in the valence band.
• These vacancies of electrons in the valence band are called holes. The holes
  are thus absence of electrons in the valence band and they carry an effective
  positive charge.
• For an intrinsic semiconductor, the number of holes per unit volume, (the
  number density, nh) and the number of free electrons per unit volume, (the
  number density, ne) is the same. nh = ne
• Electrical conduction takes place by transportation of both carriers or any
  one of the two carriers in a semiconductor. When a semiconductor is
  connected in a circuit, electrons, being negatively charged, move towards
  positive terminal of the battery. Holes have an effective positive charge, and
  move towards negative terminal of the battery. Thus, the current through a
  semiconductor is carried by two types of charge carriers which move in
  opposite directions.
   Extrinsic semiconductors
• Addition of a small amount of a suitable impurity to an intrinsic
  semiconductor increases its conductivity appreciably. The process of adding
  impurities to an intrinsic semiconductor is called doping.
• The semiconductor with impurity is called a doped semiconductor or an
  extrinsic semiconductor. The impurity is called the dopant. The parent atoms
  are called hosts.
• Silicon or germanium can be doped with a pentavalent impurity such as
  phosphorus (P) arsenic (As) or antimony (Sb) . They can also be doped with a
  trivalent impurity such as boron (B) aluminium (Al) or indium (In).
• Extrinsic semiconductors can be of two types
a) n-type semiconductor or
b) p-type semiconductor.
 n-type semiconductor
These are materials doped with pentavalent impurity (donors) atoms . Electrical
conduction in these materials is due to electrons as majority charge carriers.
1. The donor atom lose electrons and become positively charged ions.
2. Number of free electrons is very large compared to the number of holes,
                                    ne>> nh
  Electrons are majority charge carriers.
3. When energy is supplied externally, negatively charged free electrons
(majority charges carries) and positively charged holes (minority charge carriers)
are available for conduction.
 p-type semiconductor
These are materials doped with trivalent impurity atoms (acceptors). Electrical
conduction in these materials is due to holes as majority charge carriers.
1. The acceptor atoms acquire electron and become negatively charged-ions.
2. Number of holes is very large compared to the number of free electrons.
                                    nh >> ne
   Holes are majority charge carriers.
3. When energy is supplied externally, positively charged holes (majority charge
carriers) and negatively charged free electrons (minority charge carriers) are
available for conduction.
Charge neutrality of extrinsic semiconductors:
• n-type as well as p-type semiconductors are electrically neutral.
• Always remember, for a semiconductor,
                            ne.nh =       ni 2
   p-n junction
• When n-type and p-type semiconductor materials are fused together, a p-n
  junction is formed.
Diffusion -
• the number of carriers on both sides is different and a large density gradient
  exists on both sides of the p-n junction. This density gradient causes
  migration of electrons from the n-side to the p-side of the junction. They fill
  up the holes in the p-type material and produce negative ions.
• As a result, in the p-type region near the junction there are negatively
  charged acceptor ions, and in the n-type region near the junction there are
  positively charged donor ions.
• The transfer of electrons and holes across the p-n junction is called diffusion.
Depletion region:
• The diffusion of carriers across the junction and
  resultant accumulation of positive and negative
  charges across the junction builds a potential
  difference across the junction. This potential
  difference is called the potential barrier.
• It prevents continuous diffusion of carriers across
  the junction.
• Free charge carriers cannot be present in a region
  where there is a potential barrier. The regions on
  either side of a junction, therefore, becomes
  completely devoid of any charge carriers. This
  region across the p-n junction where there are no
  charges is called the depletion layer or the depletion
  region.
Biasing a p-n junction:
p-n junction diode
Forward biased
Reverse biased
Static and dynamic resistance of a diode
(i) Static (DC) resistance
(ii) Dynamic (AC) resistance
  Semiconductor devices
• Advantages:
1. Electronic properties of semiconductors can be controlled to suit our
requirement.
2. They are smaller in size and light weight.
3. They can operate at smaller voltages (of the order of few mV) and require
less current (of the order of μA or mA), therefore, consume lesser power.
4. Almost no heating effects occur, therefore these devices are thermally
stable.
5. Faster speed of operation due to smaller size.
6. Fabrication of ICs is possible.
  Semiconductor devices
• Disadvantages:
1. They are sensitive to electrostatic charges.
2. Not vary useful for controlling high power.
3. They are sensitive to radiation.
4. They are sensitive to fluctuations in temperature.
5. They need controlled conditions for their manufacturing.
6. Very few materials are semiconductors.
Applications of semiconductors and p-n
junction diode
1.   Solar cell
2.   Photo resistor
3.   Bi-polar junction transistor
4.   Photodiode
5.   LED
6.   Solid State Laser
7.   Integrated Circuits (ICs)
Thermistor
• Thermistor is a temperature sensitive resistor. Its resistance changes
  with change in its temperature. There are two types of thermistors,
• Negative Temperature Coefficient (NTC) - Resistance of a NTC
  thermistor decreases with increase in its temperature. Its
  temperature coefficient is negative. Use - temperature sensors,
  temperature control circuits.
• Positive Temperature Coefficient (PTC) - Resistance of a PTC
  thermistor increases with increase in its temperature. Use - reusable
  fuse to limit current passing through a circuit to protect against over
  current conditions, as resettable fuses.