AP4500GM

Pb Free Plating Product

Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement D2

N-CH BVDSS 20V
▼ Low On-resistance D1
D2 RDS(ON) 30mΩ
D1
▼ Fast Switching ID 6A
G2
S2 P-CH BVDSS -20V
G1
SO-8 S1 RDS(ON) 50mΩ
Description ID -5A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost- D1 D2
effectiveness.

The SO-8 package is universally preferred for all commercial- G1 G2

industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 20 -20 V
VGS Gate-Source Voltage ±12 ±12 V
3
ID@TA=25℃ Continuous Drain Current 6 -5 A
3
ID@TA=70℃ Continuous Drain Current 4.8 -4 A
1
IDM Pulsed Drain Current 20 -20 A
PD@TA=25℃ Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W

Data and specifications subject to change without notice 200609031

AP4500GM

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 30 mΩ
VGS=2.5V, ID=5.2A - - 45 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V
gfs Forward Transconductance VDS=10V, ID=6A - 18.5 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=16V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±12V - - ±100 nA
2
Qg Total Gate Charge ID=6A - 9 15 nC
Qgs Gate-Source Charge VDS=10V - 1.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.2 - nC
2
td(on) Turn-on Delay Time VDS=10V - 29 - ns
tr Rise Time ID=1A - 65 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=4.5V - 60 - ns
tf Fall Time RD=10Ω - 50 - ns
Ciss Input Capacitance VGS=0V - 300 480 pF
Coss Output Capacitance VDS=8V - 255 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=6A, VGS=0V, - 26 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 17 - nC
 AP4500GM
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA -20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.037 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.2A - - 50 mΩ
VGS=-2.5V, ID=-1.8A - - 90 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1 V
gfs Forward Transconductance VDS=-10V, ID=-2.2A - 2.5 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-20V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ± 12V - - ±100 nA
2
Qg Total Gate Charge ID=-5A - 14 20 nC
Qgs Gate-Source Charge VDS=-16V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5.6 - nC
2
td(on) Turn-on Delay Time VDS=-10V - 10 - ns
tr Rise Time ID=-2.2A - 11 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 58 - ns
tf Fall Time RD=4.5Ω - 38 - ns
Ciss Input Capacitance VGS=0V - 940 1500 pF
Coss Output Capacitance VDS=-20V - 400 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.8A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-2.2A, VGS=0V, - 25 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 21 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP4500GM
N-Channel
25 25

T A =25 o C 4.5V T A =150 o C 4.5V

3.5V 20 3.5V
ID , Drain Current (A)

20

3.0V 3.0V

ID , Drain Current (A)

2.5V 2.5V
15 15

10 10

V GS =2.0V V GS =2.0V
5
5

0
0
0 1 2 3 4 5 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

45 1.8

I D =6A
I D =6A 1.6
40
V GS =4.5V
T A =25 o C
Normalized RDS(ON)

1.4
RDS(ON) (mΩ )

35

1.2

30

1.0

25
0.8

20 0.6
2 3 4 5 -50 0 50 100 150

V GS (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100.00 1.5

10.00

1
VGS(th) (V)
IS(A)

1.00 T j =150 o C T j =25 o C

0.5

0.10

0.01 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

V SD (V) T j ,Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
 AP4500GM
N-Channel
f=1.0MHz
6 1000

5
VGS , Gate to Source Voltage (V)

I D =6A
V DS =10V Ciss
4

C (pF)
Coss
3 100

2 Crss

0 10
0 2 4 6 8 10 12 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty Factor = 0.5

0.2
10

1ms 0.1
0.1

10ms 0.05
ID (A)

1
0.02
100ms
0.01
1s PDM
0.01
t
T
0.1 o
T A =25 C 10s
Single Pulse

Single Pulse DC Duty factor = t/T

Peak T j = P DM x R thja + Ta
Rthja =135o C/W

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS (V) t , Pulse Width (s)

Fig9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AP4500GM
P-Channel
25 25

4.5V
T A =25 o C T A =150 o C 4.5V
4.0V
20 20
3.5V 4.0V
3.5V

-ID , Drain Current (A)

3.0V
-ID , Drain Current (A)

3.0V
15 15

10
V GS =2. 5 V
10
V GS =2. 5 V

5 5

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 1.8

90 I D =-2.2A
1.6 I D =-2.2A
T A =25 ℃
V GS = -4.5V
80
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )

70

1.2

60

50

0.8
40

30 0.6
2 3 4 5 -50 0 50 100 150

-V GS (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100.00 1

0.8
10.00

0.6
-VGS(th) (V)
-IS(A)

1.00 T j =150 o C T j =25 o C

0.4

0.10

0.2

0.01 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150
o
T j ,Junction Temperature ( C)
-V SD (V)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
 AP4500GM
P-Channel
f=1.0MHz
6 10000
-VGS , Gate to Source Voltage (V)

5
I D =-5A
V DS =-16V
4 1000
Ciss

C (pF)
3 Coss

Crss
2 100

0 10
0 4 8 12 16 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty Factor = 0.5

Normalized Thermal Response (R thja)

10
1ms 0.2

0.1 0.1

10ms
0.05
-ID (A)

1
100ms 0.02

0.01 PDM
1s 0.01
t

0.1 T
o 10s Single Pulse
T A =25 C Duty factor = t/T
Single Pulse DC Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS (V) t , Pulse Width (s)

Fig9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Q
Charge

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform