AP2603GY

Pb Free Plating Product

Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement S BVDSS -20V

▼ Small Package Outline D RDS(ON) 65mΩ
D
▼ Surface Mount Device G ID -5.0A
D
SOT-26 D

Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
The SOT-26 package is universally used for all commercial-industrial S
applications.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12 V
3
ID@TA=25℃ Continuous Drain Current -5 A
3
ID@TA=70℃ Continuous Drain Current -4 A
1,2
IDM Pulsed Drain Current -20 A
PD@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W

Data and specifications subject to change without notice 200728063-1/4

AP2603GY

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4.5A - - 53 mΩ
VGS=-4.5V, ID=-4.2A - - 65 mΩ
VGS=-2.5V, ID=-2.0A - - 120 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.2 V
gfs Forward Transconductance VDS=-5V, ID=-2.8A - 9 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-20V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=55 C) VDS=-16V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS= ±12V - - ±100 nA
2
Qg Total Gate Charge ID=-4.2A - 10.6 16 nC
Qgs Gate-Source Charge VDS=-16V - 2.32 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.68 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 5.9 - ns
tr Rise Time ID=-4.2A - 3.6 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 32.4 - ns
tf Fall Time RD=3.6Ω - 2.6 - ns
Ciss Input Capacitance VGS=0V - 740 1200 pF
Coss Output Capacitance VDS=-15V - 167 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 126 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-4.2A, VGS=0V, - 27.7 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 22 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.

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 AP2603GY

40 36

o -5.0V
T A =25 C 32
TA=150oC
-5.0V 28 -4.0V
30

-ID , Drain Current (A)

-ID , Drain Current (A)

-4.0V 24
65mΩ
20

20

16 -3.0V
-3.0V
12

10
8

V G = -2.0V 4 V G = -2.0V

0 0
0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

220 1.8

I =-4.2A I D = -4.2A
I DD=-4.2A
T A =25o o C 1.6 V GS = -4.5V
180 T A =25 C
Normalized RDS(ON)

1.4
RDS(ON) (mΩ )

140

1.2

100

60
0.8

20 0.6
0 2 4 6 8 10 12 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10
1.5

1
1
-VGS(th) (V)
-IS(A)

T j =150 o C T j =25 o C

0.5
0.1

2.01E+08
0
0.01
-50 0 50 100 150
0 0.4 0.8 1.2 1.6
o
-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP2603GY

12
f=1.0MHz
1000

I D = -4.2A C iss
-VGS , Gate to Source Voltage (V)

10

V DS = -16V

8
65mΩ C oss

C (pF)
6 100 C rss

0 10
0 5 10 15 20 25 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

0.1
0.1
1ms
0.05
-ID (A)

1 PDM
10ms 0.01
t
T
Single Pulse
0.01 Duty factor = t/T
100ms Peak Tj = PDM x Rthja + T a
0.1 Rthja = 156℃/W
o
T A =25 C 1s
Single Pulse DC

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

-4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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