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Stps 200170 TV 1

The STPS200170TV1 is a high voltage Schottky rectifier designed for high frequency switch mode power supplies, with a maximum repetitive peak reverse voltage of 170 V and an average forward current of 100 A per diode. It features low leakage current, negligible switching losses, and is packaged in an insulated ISOTOP package. The device is suitable for secondary rectification applications and has various thermal and electrical characteristics detailed in the datasheet.

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0% found this document useful (0 votes)
18 views8 pages

Stps 200170 TV 1

The STPS200170TV1 is a high voltage Schottky rectifier designed for high frequency switch mode power supplies, with a maximum repetitive peak reverse voltage of 170 V and an average forward current of 100 A per diode. It features low leakage current, negligible switching losses, and is packaged in an insulated ISOTOP package. The device is suitable for secondary rectification applications and has various thermal and electrical characteristics detailed in the datasheet.

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danmark
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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STPS200170TV1

High voltage power Schottky rectifier

Datasheet - production data

A1 K1
Description
This high voltage Schottky rectifier is suited for
A2 K2 high frequency switch mode power supplies.
Packaged in ISOTOP, this device is intended for
A2 use in the secondary rectification of applications.
K2

Table 1: Device summary


A1
Symbol Value
K1
IF(AV) 2 x 100 A
ISOTOP
VRRM 170 V
Tj (max.) 150 °C

Features VF (max.) 0.63 V

 Negligible switching losses


 Avalanche rated
 Low leakage current
 Good trade-off between leakage current and
forward voltage drop
 Insulated package ISOTOP:
 Insulated voltage: 2500 VRMS
 Capacitance: 45 pF

February 2018 DocID11857 Rev 3 1/8


This is information on a product in full production. www.st.com
Characteristics STPS200170TV1

1 Characteristics
Table 2: Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise
specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 170 V
IF(RMS) Forward rms current 200 A
IF(AV) Average forward current, δ = 0.5 TC = 105 °C Per diode 100 A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 700 A
PARM Repetitive peak avalanche power tp = 10 μs Tj = 125 °C 7400 W
Tstg Storage temperature range -55 to +150 °C
Tj Maximum operating junction temperature(1) 150 °C

Notes:
(1)(dP
tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters


Symbol Parameter Maximum values Unit
Per diode 0.52
Rth(j-c) Junction to case
Total 0.31 °C/W
Rth(c) Coupling thermal resistance 0.1

When the diodes 1 and 2 are used simultaneously:


Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 4: Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C - 200 µA
IR(1) Reverse leakage current VR = VRRM
Tj = 125 °C - 30 100 mA
Tj = 25 °C - 0.85
IF = 100 A
Tj = 150 °C - 0.63 0.68
VF(2) Forward voltage drop V
Tj = 25 °C - 0.975
IF = 200 A
Tj = 150 °C - 0.78 0.86

Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses, use the following equation:


P = 0.5 x IF(AV) + 0.0018 x IF2(RMS)

2/8 DocID11857 Rev 3


STPS200170TV1 Characteristics
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average Figure 2: Average forward current versus ambient
forward current (per diode) temperature (δ = 0.5, per diode)
PF(AV)(W) IF(AV)(A)
100 120
δ=0.2 δ=0.5 δ=1
90 δ=0.05 δ=0.1 Rth(j-a)=Rth(j-c)
100
80

70
80
60

50 60
40
40
30
T T
20
20
10 IF(AV)(A)
δ=tp/T tp δ=tp/T tp Tamb (°C)
0 0
0 20 40 60 80 100 120 0 25 50 75 100 125 150

Figure 3: Relative variation of thermal impedance Figure 4: Reverse leakage current versus reverse
(junction to case) versus pulse duration voltage applied (typical values, per diode)
Z th(j-c) /R th (j -c) IR(mA)
1.0 1.E+03

0.9
1.E+02 Tj=150°C
0.8

0.7 1.E+01 Tj=125°C

0.6 δ=0.5 Tj=100°C


1.E+00
0.5 Tj=75°C
1.E-01
0.4 Tj=50°C
δ=0.2
0.3 1.E-02
T Tj=25°C
0.2 δ=0.1
1.E-03
0.1
Single pulse t P(s) δ=tp/T tp
VR(V)
0.0 1.E-04
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 100 110 120 130 140 150 160 170

Figure 5: Junction capacitance versus reverse Figure 6: Forward voltage drop versus forward
voltage applied (typical values, per diode) current (per diode, low level)
C(pF) IFM(A)
10000
50
F=1MHz
VO SC =30mVR M S 45
Tj=25°C Tj=150°C
40 (Maximum values)

35
Tj=150°C
30 (Typical values) Tj=25°C
1000 (Maximum values)
25

20

15

10

5
VR(V) VFM(V)
100 0
1 1 0 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

DocID11857 Rev 3 3/8


Characteristics STPS200170TV1
Figure 7: Forward voltage drop versus forward Figure 8: Normalized avalanche power derating
current (per diode, high level) versus pulse duration
IFM(A) PARM (t p )
1000 PARM (10 µs)
1

Tj=150°C
(Maximum values)

100 Tj=150°C 0.1


(Typical values)

Tj=25°C
(Maximum values)
0.01
10

t p (µs)
VFM(V) 0.001
1 1 10 100 1000
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

4/8 DocID11857 Rev 3


STPS200170TV1 Package information

2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
 Epoxy meets UL94, V0
 Cooling method: by conduction (C)
 Recommended torque value: 1.3 N·m
 Maximum torque value: 1.5 N·m
STMicroelectronics strongly recommends the use of the screws delivered with this product.
The use of any other screws is entirely at the user's own risk and will invalidate the
warranty.

2.1 ISOTOP package information


Figure 9: ISOTOP package outline

DocID11857 Rev 3 5/8


Package information STPS200170TV1

Table 5: ISOTOP package mechanical data


Dimensions
Ref. Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.80 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 0.976
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5 0.181 0.197
H -0.05 0.1 -0.002 0.004
Diam P 4 4.30 0.157 0.169
P1 4 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193

6/8 DocID11857 Rev 3


STPS200170TV1 Ordering information

3 Ordering information
Table 6: Ordering information
Order code Marking Package Weight Base qty. Delivery mode
27 g 10
STPS200170TV1 STPS200170TV1 ISOTOP Tube
(without screws) (with screws)

4 Revision history
Table 7: Document revision history
Date Revision Changes
14-Nov-2005 1 First issue.
09-Sep-2011 2 Updated VF max at Tj = 25 °C and IF = 100 A to 0.85 V.
Updated Table 2: "Absolute ratings (limiting values, per diode at
12-Feb-2018 3 Tamb = 25 °C, unless otherwise specified)" and the new PARM
curve at 10 µs.

DocID11857 Rev 3 7/8


STPS200170TV1

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© 2018 STMicroelectronics – All rights reserved

8/8 DocID11857 Rev 3

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