HMC 329
HMC 329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
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For price, delivery,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
4 - 48 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Conversion Gain vs.
Temperature @ LO = +13 dBm Isolation @ LO = +13 dBm
0 0
-10
-4
CONVERSION GAIN (dB)
LO / RF
RF / IF
LO / IF
ISOLATION (dB)
-20
-8
-30
-12
-16
+ 25 C
+ 85 C
- 55 C
-40
-50
4
-20 -60
Upconverter Performance
Conversion Gain vs. LO Drive Conversion Gain @ LO = +13 dBm
0 0
+ 7 dBm
+ 9 dBm
-4 -4
CONVERSION GAIN (dB)
+ 11 dBm
+ 13 dBm
+ 15 dBm
-8 -8
-12 -12
-16 -16
-20 -20
22 26 30 34 38 42 22 25 28 31 34 37 40
FREQUENCY (GHz) FREQUENCY (GHz)
-4
RESPONSE (dB)
-8
-12
IF Return Loss
-16 Conversion Gain
-20
0 2 4 6 8 10 12
FREQUENCY (GHz)
For price,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact delivery,
Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 978-250-3373
• Order online at www.analog.com 4 - 49
Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Input IP3 vs.
Input IP3 vs. LO Drive * Temperature @ LO = +13 dBm *
25 25
20 20
IP3 (dBm)
IP3 (dBm)
15 15
+ 11 dBm + 25 C
10 + 13 dBm 10 + 85 C
4
+ 15 dBm - 55 C
5 5
0 0
MIXERS - DOUBLE-BALANCED - CHIP
26 28 30 32 34 36 38 40 26 28 30 32 34 36 38 40
FREQUENCY (GHz) FREQUENCY (GHz)
65 65
60 60
IP2 (dBm)
IP2 (dBm)
55 55
50 50
+ 11 dBm + 25 C
45 + 13 dBm 45 + 85 C
+ 15 dBm - 55 C
40 40
26 28 30 32 34 36 38 40 26 28 30 32 34 36 38 40
FREQUENCY (GHz) FREQUENCY (GHz)
mRF 0 1 2 3 4
13
0 xx 7
1 19 0 41
P1dB (dBm)
11
2 69 57 67
3 74 69 71 9
4 74 74 + 25 C
+ 85 C
RF = 31 GHz @ -10 dBm 7 - 55 C
LO = 32 GHz @ +13 dBm
All values in dBc below IF output power level. 5
26 28 30 32 34 36 38 40
FREQUENCY (GHz)
NOTES:
Die Packaging Information [1] 1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
Standard Alternate
3. TYPICAL BOND PAD IS .004” SQUARE.
GP-5 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD.
[1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD.
packaging dimensions. 6. BACKSIDE METAL IS GROUND.
[2] For alternate packaging information contact Hittite 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Microwave Corporation.
4 die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
RF Ground Plane
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is
recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the 3 mil Ribbon Bond
sealed ESD protective bag has been opened, all die should be stored in a dry
0.076mm
nitrogen environment. (0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
RF Ground Plane
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and 0.150mm (0.005”) Thick
should not be touched with vacuum collet, tweezers, or fingers. Moly Tab
0.254mm (0.010”) Thick Alumina
Mounting Thin Film Substrate
Figure 2.
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
Notes: