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HMC 329

The HMC329 is a GaAs MMIC double-balanced mixer designed for applications in the 25-40 GHz range, suitable for LMDS, microwave point-to-point radios, and SATCOM. It features a compact size of 0.85 x 0.55 mm, requires no DC bias, and offers excellent isolation and input IP3 of +19 dBm. The document includes detailed specifications, mounting techniques, and handling precautions for optimal performance and reliability.

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0% found this document useful (0 votes)
18 views6 pages

HMC 329

The HMC329 is a GaAs MMIC double-balanced mixer designed for applications in the 25-40 GHz range, suitable for LMDS, microwave point-to-point radios, and SATCOM. It features a compact size of 0.85 x 0.55 mm, requires no DC bias, and offers excellent isolation and input IP3 of +19 dBm. The document includes detailed specifications, mounting techniques, and handling precautions for optimal performance and reliability.

Uploaded by

basseballa0
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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HMC329

v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz

Typical Applications Features


The HMC329 is ideal for: Passive: No DC Bias Required
• LMDS Input IP3: +19 dBm
• Microwave Point-to-Point Radios LO/RF Isolation: 42 dB
• SATCOM Small Size: 0.85 x 0.55 x 0.1 mm

4 Functional Diagram General Description


MIXERS - DOUBLE-BALANCED - CHIP

The HMC329 chip is a miniature passive double


balanced mixer which can be used as an upconverter
or downconverter from 25-40 GHz in a small chip
area of 0.85 x 0.55 mm. Excellent isolations are
provided by on-chip baluns, and the chip requires no
external components and no DC bias. Measurements
were made with the chip mounted and ribbon bonded
into in a 50-ohm microstrip test fixture that contains
5-mil alumina substrates between the chip and
K-connectors. Measured data includes the parasitic
effects of the assembly. RF connections to the chip
were made with 0.076 mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).

Electrical Specifi cations, TA = +25° C


LO = +13 dBm, IF = 1 GHz
Parameter Units
Min. Typ. Max.
Frequency Range, RF & LO 25 - 40 GHz
Frequency Range, IF DC - 8 GHz

Conversion Loss 9.5 11.5 dB

Noise Figure (SSB) 9.5 11.5 dB


LO to RF Isolation 38 42 dB
LO to IF Isolation 25 35 dB
RF to IF Isolation 21 28 dB
IP3 (Input) 16 19 dBm
IP2 (Input) 45 55 dBm
1 dB Compression (Input) 8 11 dBm
* Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.

www.datasheetall.com
For price, delivery,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
4 - 48 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Conversion Gain vs.
Temperature @ LO = +13 dBm Isolation @ LO = +13 dBm
0 0

-10
-4
CONVERSION GAIN (dB)

LO / RF
RF / IF
LO / IF

ISOLATION (dB)
-20
-8
-30
-12

-16
+ 25 C
+ 85 C
- 55 C
-40

-50
4
-20 -60

MIXERS - DOUBLE-BALANCED - CHIP


22 26 30 34 38 42 22 26 30 34 38 42
FREQUENCY (GHz) FREQUENCY (GHz)

Upconverter Performance
Conversion Gain vs. LO Drive Conversion Gain @ LO = +13 dBm
0 0

+ 7 dBm
+ 9 dBm
-4 -4
CONVERSION GAIN (dB)

CONVERSION GAIN (dB)

+ 11 dBm
+ 13 dBm
+ 15 dBm

-8 -8

-12 -12

-16 -16

-20 -20
22 26 30 34 38 42 22 25 28 31 34 37 40
FREQUENCY (GHz) FREQUENCY (GHz)

IF Bandwidth @ LO = +13 dBm


0

-4
RESPONSE (dB)

-8

-12

IF Return Loss
-16 Conversion Gain

-20
0 2 4 6 8 10 12
FREQUENCY (GHz)

For price,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact delivery,
Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 978-250-3373
• Order online at www.analog.com 4 - 49
Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Input IP3 vs.
Input IP3 vs. LO Drive * Temperature @ LO = +13 dBm *
25 25

20 20
IP3 (dBm)

IP3 (dBm)
15 15

+ 11 dBm + 25 C
10 + 13 dBm 10 + 85 C

4
+ 15 dBm - 55 C

5 5

0 0
MIXERS - DOUBLE-BALANCED - CHIP

26 28 30 32 34 36 38 40 26 28 30 32 34 36 38 40
FREQUENCY (GHz) FREQUENCY (GHz)

Input IP2 vs.


Input IP2 vs. LO Drive * Temperature @ LO = +13 dBm *
70 70

65 65

60 60
IP2 (dBm)

IP2 (dBm)

55 55

50 50

+ 11 dBm + 25 C
45 + 13 dBm 45 + 85 C
+ 15 dBm - 55 C

40 40
26 28 30 32 34 36 38 40 26 28 30 32 34 36 38 40
FREQUENCY (GHz) FREQUENCY (GHz)

MxN Spurious Outputs Input P1dB vs.


as a Down Converter Temperature @ LO = +13 dBm
nLO 15

mRF 0 1 2 3 4
13
0 xx 7
1 19 0 41
P1dB (dBm)

11
2 69 57 67
3 74 69 71 9
4 74 74 + 25 C
+ 85 C
RF = 31 GHz @ -10 dBm 7 - 55 C
LO = 32 GHz @ +13 dBm
All values in dBc below IF output power level. 5
26 28 30 32 34 36 38 40
FREQUENCY (GHz)

* Two-tone input power = -5 dBm each tone, 1 MHz spacing.

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
4 - 50 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 978-250-3373
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz

Absolute Maximum Ratings


RF / IF Input +13 dBm
LO Drive +27 dBm
IF DC Current ±2 mA
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1B

ELECTROSTATIC SENSITIVE DEVICE


4
OBSERVE HANDLING PRECAUTIONS

MIXERS - DOUBLE-BALANCED - CHIP


Outline Drawing

NOTES:
Die Packaging Information [1] 1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
Standard Alternate
3. TYPICAL BOND PAD IS .004” SQUARE.
GP-5 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD.
[1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD.
packaging dimensions. 6. BACKSIDE METAL IS GROUND.
[2] For alternate packaging information contact Hittite 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Microwave Corporation.

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com 4 - 51
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs


The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If 3 mil Ribbon Bond
0.076mm
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should (0.003”)
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick

4 die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
RF Ground Plane

minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).


MIXERS - DOUBLE-BALANCED - CHIP

Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is
recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the 3 mil Ribbon Bond
sealed ESD protective bag has been opened, all die should be stored in a dry
0.076mm
nitrogen environment. (0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
RF Ground Plane
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and 0.150mm (0.005”) Thick
should not be touched with vacuum collet, tweezers, or fingers. Moly Tab
0.254mm (0.010”) Thick Alumina
Mounting Thin Film Substrate
Figure 2.
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
4 - 52 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC329
v04.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz

Notes:

MIXERS - DOUBLE-BALANCED - CHIP

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com 4 - 53
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com

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