EMC13N08E

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:
D
BVDSS 75V
RDSON (MAX.) 13mΩ
ID 80A G

UIS, Rg 100% Tested S

Pb‐Free Lead Plating

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT

Gate‐Source Voltage VGS ±30 V

TC = 25 °C 80
Continuous Drain Current ID
TC = 100 °C 55 A

Pulsed Drain Current1 IDM 200

Avalanche Current IAS 40

Avalanche Energy L = 0.5mH, ID=40A, RG=25Ω EAS 400

mJ
2
Repetitive Avalanche Energy L = 0.1mH EAR 80

TC = 25 °C 192
Power Dissipation PD W
TC = 100 °C 77

Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT

Junction‐to‐Case RJC 0.65

°C / W
Junction‐to‐Ambient RJA 62.5
1
Pulse width limited by maximum junction temperature.
2
Duty cycle  1％

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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT

MIN TYP MAX

STATIC
Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 75 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.5 2.5 4.0
Gate‐Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V 1 A
VDS = 50V, VGS = 0V, TJ = 125 °C 25
On‐State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 80 A
1
Drain‐Source On‐State Resistance RDS(ON) VGS = 10V, ID = 30A 10.5 13 mΩ
1
Forward Transconductance gfs VDS = 5V, ID = 30A 38 S

DYNAMIC
Input Capacitance Ciss 3368
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 327 pF

Reverse Transfer Capacitance Crss 286

Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 2.0 Ω
Total Gate Charge1,2 Qg VDS = 40V, VGS = 10V, 42
Gate‐Source Charge 1,2
Qgs ID = 30A 19 nC
1,2
Gate‐Drain Charge Qgd 17
Turn‐On Delay Time1,2 td(on) 25
Rise Time1,2 tr VDS = 40V, 200 nS
1,2
Turn‐Off Delay Time td(off) ID = 1A, VGS = 10V, RGS = 6Ω 100
1,2
Fall Time tf 120

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS 80
A
3
Pulsed Current ISM 200
Forward Voltage1 VSD IF = IS, VGS = 0V 1.3 V
Reverse Recovery Time trr IF = 25A, dlF/dt = 100A / S 120 nS
Reverse Recovery Charge Qrr 380 nC
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

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Ordering & Marking Information:

Device Name: EMC13N08E for TO‐220

C13 C13N08: Device Name

N08
ABCDEFG ABCDEFG: Date Code

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TYPICAL CHARACTERISTICS

On‐Region Characteristics On‐Resistance Variation with Drain Current and Gate Voltage
100 2.4
VGS = 10V
2.2
8.0V 7.0V
80
2.0

Drain‐Source On‐Resistance
ID ‐ Drain Current( A )

R DS(ON) ‐Normalized
1.8
60
1.6
40 VGS = 7.0 V
1.4
8.0 V
1.2
20
10 V
1.0

0 0.8
0 1 2 3 4 5 0 20 40 60 80 100
VDS ‐ Drain Source Voltage( V ) I D ‐ Drain Current( A )

On‐Resistance Variation with Temperature On‐Resistance Variation with Gate‐Source Voltage

1.9 0.045
I D = 30A
I D = 15 A
VGS = 10V 0.040
1.6
R DS(ON) ‐ On‐Resistance( Ω )

0.035
Drain‐Source On‐Resistance

1.3 0.030
RDS(on) ‐ Normalized

0.025
1.0
0.020
TA = 125°C
0.7 0.015

0.010
TA = 25°C
0.4 0.005
‐50 ‐25 0 25 50 75 100 125 150 4
2 6 8 10
T J ‐ Junction Temperature (° C)
VGS ‐ Gate‐Source Voltage( V )

Body Diode Forward Voltage Variation with

Transfer Characteristics Source Current and Temperature
60 100
VDS = 10V V GS = 0V
50 T A= 125° C
Is ‐ Reverse Drain Current(A)

10
TA = ‐55°C
I D ‐ Drain Current( A )

40
1 25° C

30 25°C

125°C 0.1 ‐55° C

20

10 0.01

0
2 3 4 5 6 0.001
VGS ‐ Gate‐Source Voltage( V ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD ‐ Body Diode Forward Voltage(V)

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Gate Charge Characteristics Capacitance Characteristics

10 4000
ID = 40A f = 1MHz
VGS = 0 V
8 Ciss
VGS ‐ Gate‐Source Voltage( V )

VDS = 20V 3000

40V
6

Capacitance( pF )
2000
4

1000
2 Coss

Crss
0 0
0 15 30 45 60 0 20 40 60 80
Q g ‐ Gate Charge( nC ) VDS ‐ Drain‐Source Voltage( V )

Maximum Safe Operating Area Single Pulse Maximum Power Dissipation

3000
Single Pulse
3 RθJC = 0.65°C/W
10 TC = 25°C
2500
10μs
RDS(ON) Limited
10
2 100μs
2000
ID, Drain Current( A )

1ms
Power( W )

10ms
1500
1
DC
10

1000

0
10
TC=25° C 500
RθJC=0.65° C/W
Vgs=10V
Single Pulse
‐1 0
10 0 1 2
0.01 0.1 1 10 100 1000
10 10 10 Single Pulse Time( sec )
VDS, Drain‐Source Voltage( V )

Transient Thermal Response Curve

0
10
Transient Thermal Resistance

D=0.5
r(t),Normalized Effective

0.2 ※Note :
1. RθJC(t)=0.65° C/W Max.
‐1
0.1 2. Duty Cycle, D=t1/ t2
10 3. TJM ‐ TC=PDM*RθJC(t)
0.05

0.02 PDM
0.01
t1
single pulse
‐2 t2
10

‐5 ‐4 ‐3 ‐2 ‐1 0 1
10 10 10 10 10 10 10
t1,Time( sec )

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Outline Drawing

Dimension in mm
Dimension A b b1 c c2 E L1 L2 L3 L4 ø e f g h

Min. 4.20 0.70 0.90 0.30 1.10 9.80 2.55 6.10 14.80 13.50 3.40 2.35 1.30 3.40 2.40

Max. 4.80 1.10 1.50 0.70 1.50 10.50 2.85 6.50 15.40 14.50 3.80 2.75 1.90 3.80 3.00

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