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Product
STM6962
SamHop Microelectronics Corp. Aug 29.2006

Dual N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY FEATURES

VDSS ID RDS(ON) ( m Ω ) Max

Super high dense cell design for low RDS(ON).
Rugged and reliable.
36 @ VGS = 10V
60V 6.5A Surface Mount Package.
42 @ VGS = 4.5V

D1 D1 D2 D2
8 7 6 5

SO-8
1 1 2 3 4
S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
a 25 C 6.5 A
Drain Current-Continuous @Ta ID
70 C 5.5 A
b
-Pulsed IDM 25 A
a
Drain-Source Diode Forward Current IS 1.7 A

Ta= 25 C 2
a
Maximum Power Dissipation PD W
Ta=70 C 1.44
Operating Junction and Storage
TJ, TSTG -55 to 150 C
Temperature Range

THERMAL CHARACTERISTICS
a
Thermal Resistance, Junction-to-Ambient R JA 62.5 C /W

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E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
5 OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 60 V
Zero Gate Voltage Drain Current IDS S V DS = 48V, V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.0 1.8 3.0 V
V GS =10V, ID = 6.5A 29 36 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =4.5V, ID= 4A 32 42 m ohm

On-S tate Drain Current ID(ON) V DS = 5V, V GS = 10V 20 A

Forward Transconductance gFS V DS = 5V, ID = 6.5A 14 S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance C IS S 1200 PF
V DS =25V, V GS = 0V
Output Capacitance C OS S 135 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 80 PF

Gate resistance Rg V GS =0V, V DS = 0V, f=1.0MH Z 5 ohm

c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) 18 ns
V DD = 30V
R ise Time tr ID = 4.5 A 19 ns
Turn-Off Delay Time tD(OFF) V GS = 10V 48 ns
R GE N = 3 ohm
Fall Time tf 12 ns
Total Gate Charge Qg V DS =48V, ID =4.5A,V GS =10V 25 nC
V DS =48V, ID =4.5A,V GS =4.5V 13 nC
Gate-S ource Charge Q gs V DS =48V, ID = 4.5 A 2.6 nC
Gate-Drain Charge Q gd V GS =10V 7 nC
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E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
C
Parameter S ymbol Condition Min Typ Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage VSD V GS = 0V, Is =1.7A 0.8 1.2 V

Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20 20
V G S =10V
V G S =4.5V
16 16
ID , Drain C urrent(A)

I D , Drain C urrent (A)

T j=125 C
V G S =3.5V
12 12

8 8
V G S =3V 25 C
-55 C
4 4
V G S =2.5V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.6 1.2 1.8 2.4 3.0 3.6
V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

66 2.0
R DS (ON) , On-R es is tance

55 1.8
V G S =10V
R DS (on) (m Ω)

Normalized

44 1.6 I D =6.5A
V G S =4.5V
33 1.4

V G S =10V
22 1.2 V G S =4.5V
I D =4A
11 1.0

1 0
1 4 8 12 16 20 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.3 1.15
I D =250uA
1.2 V DS =V G S
1.10
I D =250uA

B V DS S , Normalized
V th, Normalized

1.1 1.05
1.0
1.00
0.9
0.95
0.8
0.90
6 0.7

0.6 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

90 20.0
I D =6.5A
75 25 C
Is , S ource-drain current (A)

10.0
R DS (on) (m Ω)

60
125 C 5.0
45

30 75 C
25 C 125 C
75 C
15

0 1.0
0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5

V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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1500 10

V G S , G ate to S ource V oltage (V )

C is s V DS =48V
1250 8 I D =6.5A
C , C apacitance (pF )

1000
6
750
4
500
C os s
6 250
2
C rs s
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32
V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 9. C apacitance F igure 10. G ate C harge

600 50
30
it
10 ) L im
S witching T ime (ns )

I D , Drain C urrent (A)

100 S ( ON
RD 10
60 Tr ms
10
Tf 0m
s
1s
10 1 DC

V DS =30V ,ID=6.5A 0.1 V G S =10V

1 S ingle P ulse
V G S =10V
T A =25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 60

R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V )

F igure 11.s witching characteris tics F igure 12. Maximum S afe

O perating Area
9
Normalized Transient

1
Thermal Resistance

0.5

0.2
0.1
0.1 P DM
0.05
t1
t2
0.02
0.01 1. R thJ A (t)=r (t) * R thJ A
2. R thJ A =S ee Datas heet
0.01 Single Pulse 3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve

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PAC K AG E OUT LINE DIME NS IONS

S O-8

E
D

0.015X45±
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0± 8± 0± 8±

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SO-8 Tape and Reel Data

SO-8 Carrier Tape

unit:р
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T

SOP 8N ӿ1.5
ӿ1.5 12.0 5.5
8.0 4.0 2.0 0.3
6.40 5.20 2.10 + 0.1 1.75
150п (MIN) ²0.3 ²0.05 ²0.05 ²0.05
- 0.0

SO-8 Reel

UNIT:р
TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 р ӿ330 330 62 12.4 16.8 ӿ12.75 2.0

² 1 ²1.5 + 0.2 - 0.4 + 0.15 ²0.15