KSC945 — NPN Epitaxial Silicon Transistor

November 2014

KSC945
NPN Epitaxial Silicon Transistor

Features
• Audio Frequency Amplifier and High-Frequency OSC.
• Complimentary to KSA733
• Collector-Base Voltage: VCBO = 60 V
• High Current Gain Bandwidth Product: fT = 300 MHz (Tyical)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92
1. Emitter 2. Base 3. Collector

Ordering Information
Part Number Top Mark Package Packing Method
KSC945YBU C945 TO-92 3L Bulk
KSC945YTA C945 TO-92 3L Ammo
KSC945GTA C945 TO-92 3L Ammo
KSC945CYTA C945 TO-92 3L Ammo
KSC945CGBU C945 TO-92 3L Bulk
KSC945CGTA C945 TO-92 3L Ammo

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 150 mA
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 to 150 °C

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KSC945 Rev. 1.1.0
 KSC945 — NPN Epitaxial Silicon Transistor
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

Power Dissipation 250 mW
PD
Derate Above 25°C 2.0 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 500 °C/W

Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 60 V
BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 50 V
BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5 V
ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 0.1 μA
IEBO Emitter Cut-Off Current VEB = 3 V, IC = 0 0.1 μA
hFE DC Current Gain VCE = 6 V, IC = 1.0 mA 40 700
VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.15 0.30 V
fT Current Gain Bandwidth Product VCE = 6 V, IC = 10 mA 300 MHz

VCB = 6 V, IE = 0,
Cob Output Capacitance 2.5 pF
f = 1 MHz

NF Noise Figure VCE = 6 V, IC = 0.5 mA, 4.0 dB

f = 1 kHz, RS = 500 Ω

hFE Classification
Classification R O Y G L
hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KSC945 Rev. 1.1.0 2
 KSC945 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics

100 100

IB = 400μA VCE = 6V
IB = 350μA
IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

80
IB = 300μA
IB = 250μA 10
60
IB = 200μA

IB = 150μA
40
1
IB = 100μA
20
IB = 50μA

0 0.1
0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 10

VCE = 6V IC = 10 IB
hFE, DC CURRENT GAIN

1 VBE(sat)

100

0.1

VCE(sat)

10 0.01
1 10 100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

100 1000

IE = 0 VCE = 6V
f = 1MHz
Cob [pF], CAPACITANCE

10 100

1 10

0.1 1
1 10 100 1000 0.1 1 10 100

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KSC945 Rev. 1.1.0 3
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I73

© Fairchild Semiconductor Corporation www.fairchildsemi.com

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