KSC1393

KSC1393

TV VHF Tuner RF Amplifier (Forward AGC)

• High Current Gain Bandwidth Product : fT=700MHz (TYP.)
• Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz
• Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.)

1 TO-92
1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current 20 mA
PC Collector Power Dissipation 250 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V
BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 V
ICBO Collector Cut-off Current VCB=20V, IE=0 0.1 µA
hFE DC Current Gain VCE=10V, IC=2mA 40 180
fT Current Gain Bandwidth Product VCE=10V, IC=3mA 400 700 MHz
CRE Reverse Transfer Capacitance VCB=10V, IE=0, f=1MHz 0.35 0.5 pF
GPE Power Gain VCE=10V, IC=3mA 20 24 dB
f=200MHz
IAGC AGC Current IE at GR= -30dB, f=200MHz -10 -12 mA
NF Noise Figure VCE=10V, IC= 3mA 2.0 3.0 dB
f=200MHz

hFE Classification
Classification R O Y
hFE 40 ~ 80 60 ~ 140 90 ~ 180

©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002

 KSC1393
Typical Characteristics

10
IB = 200µAI = 180µA
9
B VCE = 2V
IB = 160µA
IB = 140µA
IC[mA], COLLECTOR CURRENT

8
IB = 120µA 100

hFE, DC CURRENT GAIN

7
IB = 100µA

6
IB = 80µA
5

4 IB = 60µA

3
IB = 40µA
2

1 IB = 20µA
10
0 0.1 1 10
0 1 2 3 4 5 6 7 8 9 10

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

10 10
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC=10IB f=1MHz
IE=0
Cre[pF], CAPACITANCE

1 VBE(sat)

VCE(sat)

0.1

0.01
0.1 1 10 0.1
1 100

IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Capacitance

Collector-Emitter Saturation Voltage

10000

VCE = 10V
CURRENT GAIN-BANDWIDTH PRODUCT

1000
fT[MHz],

100

10
0.1 1 10 100

IC[mA], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002

 KSC1393
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002

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intended to be an exhaustive list of all such trademarks.

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As used herein:
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1