SS8050

SS8050

2W Output Amplifier of Portable Radios in

Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)

1 TO-92
1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 1.5 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V
BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA
hFE1 DC Current Gain VCE=1V, IC=5mA 45 135
hFE2 VCE=1V, IC=100mA 85 160 300
hFE3 VCE=1V, IC=800mA 40 110
VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.28 0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 0.98 1.2 V
VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA 0.66 1 V
Cob Output Capacitance VCB=10V, IE=0 9.0 pF
f=1MHz
fT Current Gain Bandwidth Product VCE=10V, IC=50mA 100 190 MHz

hFE Classification
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 SS8050
Typical Characteristics

0.5 1000

VCE = 1V
IB = 3.0mA
IC[mA], COLLECTOR CURRENT

0.4

hFE, DC CURRENT GAIN

IB = 2.5mA
100
0.3 IB = 2.0mA

IB = 1.5mA
0.2
10
IB = 1.0mA
0.1

IB = 0.5mA

1
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000 100

IC = 10 IB VCE = 1V
IC[mA], COLLECTOR CURRENT

V BE(sat)
1000 10

100 1

V CE(sat)

10 0.1
0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

1000 1000
CURRENT GAIN BANDWIDTH PRODUCT

IE = 0 VCE = 10V
f = 1MHz
Cob [pF], CAPACITANCE

100 100
fT[MHz],

10 10

1 1
1 10 100 1 10 100 400

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 SS8050
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1