MJE3055T
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A
• High Current Gain-Bandwidth Product : fT = 2MHz (Min.)
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector -Base Voltage 70 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 10 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 75 W
PC Collector Dissipation (Ta=25°C) 0.6 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V
ICEO Collector Cut-off Current VCE = 30V, IB = 0 700 µA
ICEX1 Collector Cut-off Current VCE = 70V, VBE(off) = -1.5V 1 mA
ICEX2 VCE = 70V, VBE(off) = -1.5V 5 mA
@ TC = 150°C
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 5 mA
hFE *DC Current Gain VCE = 4V, IC = 4A 20 100
VCE = 4V, IC = 10A 5
VCE(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 0.4A 1.1 V
IC = 10A, IB = 3.3A 8 V
VBE (on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 1.8 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 2 MHz
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE3055T
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000 10
VCE = 2V IC = 10I B
hFE, DC CURRENT GAIN
100 1 V BE(sat)
10 0.1
VCE (sat)
1 0.01
0.01 0.1 1 10 0.1 1 10 100
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100 105
90
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
75
10
100
1 ms
5 ms 60
0µ s
DC
45
1
30
15
0.1 0
1 10 100 0 25 50 75 100 125 150 175
VCE[V], COLLECTOR-EMITTER VOLTAGE o
Tc[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE3055T
Package Demensions
TO-220
1.30 ±0.10 9.90 ±0.20 4.50 ±0.20
(8.70)
2.80 ±0.10
(1.70)
+0.10
ø3.60 ±0.10 1.30 –0.05
18.95MAX.
(3.70)
15.90 ±0.20
9.20 ±0.20
(1.46)
(3.00)
(45°
)
(1.00)
13.08 ±0.20
10.08 ±0.30
1.27 ±0.10 1.52 ±0.10
0.80 ±0.10 +0.10
0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FASTr™ PowerTrench® SyncFET™
Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
CoolFET™ GTO™ QS™ VCX™
CROSSVOLT™ HiSeC™ QT Optoelectronics™ UHC™
DOME™ ISOPLANAR™ Quiet Series™
E2CMOS™ MICROWIRE™ LILENT SWITCHER®
EnSigna™ OPTOLOGIC™ SMART START™
FACT™ OPTOPLANAR™ SuperSOT™-3
FACT Quiet Series™ PACMAN™ SuperSOT™-6
FAST® POP™ SuperSOT™-8
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation Rev. G