KSP2907A
KSP2907A
General Purpose Transistor
Collector-Emitter Voltage: VCEO= 60V Collector Power Dissipation: PC (max)=625mW Refer to KSP2907 for graphs TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -60 -5 -600 625 150 -55 ~ 150 Units V V V mA mW C C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage * Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -10A, IE=0 IC= -10mA, IB=0 IE= -10A, IC=0 VCB= -50V, IE=0 IC= -0.1mA, VCE= -10V VCE= -10V, IC= -1mA, VCE= -10V , IC= -10mA VCE= -10V, *IC= -150mA VCE= -10V, *IC= -500mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA VCB= -10V, IE=0 f=1MHz IC= -50mA, VCE= -20V f=100MHz VCC= -30V, IC= -150mA IB1= -15mA VCC= -6V, IC= -150mA IB1=IB2= -15mA 200 45 100 75 100 100 100 50 Min. -60 -60 -5 -10 Typ. Max. Units V V V nA
300 -0.4 -1.6 -1.3 -2.6 8 V V V V pF MHz ns ns
VCE (sat) VBE (sat) Cob fT tON tOFF
* Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Output Capacitance * Current Gain Bandwidth Product Turn On Time Turn Off Time
* Pulse Test: Pulse Width300s, Duty Cycle2% * Also available as and PN2907
2002 Fairchild Semiconductor Corporation
Rev. A2, February 2002
KSP2907A
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
VCE = -10V
IC = 10 IB
hFE, DC CURRENT GAIN
-1
VBE(sat)
100
-0.1
VCE(sat)
10 -1 -10 -100 -1000
-0.01 -1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
100
1000
IE = 0 f = 1MHz
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
VCE = -20V
Cob [pF], CAPACITANCE
10
100
0.1 -1 -10 -100
10
-1
-10
-100
-1000
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
2002 Fairchild Semiconductor Corporation
Rev. A2, February 2002
KSP2907A
Package Demensions
TO-92
4.58 0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 0.05
+0.10
3.86MAX
1.02 0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A2, February 2002
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
2002 Fairchild Semiconductor Corporation
Rev. H4