KSC2331

KSC2331

Low Frequency Amplifier & Medium Speed

Switching
• Complement to KSA931
• High Collector-Base Voltage : VCBO=80V
• Collector Current : IC=700mA
• Collector Dissipation : PC=1W
1 TO-92L
1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 8 V
IC Collector Current 700 mA
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 80 V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V
ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 µA
IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
hFE DC Current Gain VCE=2V, IC=50mA 40 240
VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.7 V
VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.20 V
fT Current Gain Bandwidth Product VCE=10V, IC=50mA 30 50 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF

hFE Classification
Classification R O Y
hFE 40 ~ 80 70 ~ 140 120 ~ 240

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

 KSC2331
Typical Characteristics

200 240

180 VCE = 2V
IC[mA], COLLECTOR CURRENT

200
160
IB = 1.4mA

hFE, DC CURRENT GAIN

140
IB = 1.2mA 160
120
IB = 1.0mA
100 120

IB = 0.8mA
80

IB = 0.6mA 80
60

IB = 0.4mA
40
40

20 IB = 0.2mA

0 0
0 5 10 15 20 25 30 35 40 45 50 55 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10 1000

IC = 10 IB VCE = 2V
IC[mA], COLLECTOR CURRENT

1 100
VBE(sat)

0.1 10

VCE(sat)

1
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2
1 10 100 1000

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

10000 1.6
o
1. Ta = 25 C
2. *Single Pulse 1.4
IC[mA], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

1.2

1000
1.0
*2
00
m

0.8
s

DC
0.6
100

0.4

0.2

10
1 10 100 1000 0.0
0 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o

Ta[ C], AMIBIENT TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

 KSC2331
Package Dimensions

TO-92L
4.90 ±0.20
8.00 ±0.20

0.70MAX.
1.70 ±0.20
1.00 ±0.10

0.80 ±0.10
13.50 ±0.40

1.00MAX.

0.50 ±0.10

1.27TYP
[1.27 ±0.20]

2.54 TYP 0.45 ±0.10

1.45 ±0.20

3.90 ±0.20
3.90 ±0.20

0.45 ±0.10

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

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intended to be an exhaustive list of all such trademarks.

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Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
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E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
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As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1