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MJ 3041

The MJ3041 is a high DC current gain Silicon NPN Darlington Power Transistor designed for line operated amplifier and switching regulator applications. It features low collector-emitter saturation voltage, robust performance, and has specified absolute maximum ratings including a collector-emitter voltage of 300V and continuous collector current of 10A. ISC disclaims any liability for the use of its products in specialized applications and reserves the right to change the datasheet content without notice.

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30 views2 pages

MJ 3041

The MJ3041 is a high DC current gain Silicon NPN Darlington Power Transistor designed for line operated amplifier and switching regulator applications. It features low collector-emitter saturation voltage, robust performance, and has specified absolute maximum ratings including a collector-emitter voltage of 300V and continuous collector current of 10A. ISC disclaims any liability for the use of its products in specialized applications and reserves the right to change the datasheet content without notice.

Uploaded by

Mamoet Pande
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Darlington Power Transistor MJ3041

DESCRIPTION
·High DC Current Gain
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for line operated amplifier series pass
and switching regulator applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 400 V

VCEO Collector-Emitter Voltage 300 V

VEBO Emitter-Base Voltage 8 V

IC Collector Current-Continuous 10 A

ICM Collector Current-Peak 15 A


Collector Power Dissipation
PC 175 W
@TC=25℃

Tj Junction Temperature -65~200 ℃

Tstg Storage Temperature Range -65~200 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Darlington Power Transistor MJ3041

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 300 V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A ,IB= 50mA 2.2 V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A ,IB= 0.4A 2.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A ,IB= 0.4A 3.0 V

VBE(on) Base-Emitter On Voltage IC= 2.5A ; VCE= 5V 2.5 V

ICBO Collector Cutoff Current VCE= 400V, IB=0 1 mA

IEBO Emitter Cutoff Current VEB= 5V; IC=0 3 mA

hFE-1 DC Current Gain IC= 2.5A ; VCE= 5V 250

hFE-2 DC Current Gain IC= 5A ; VCE= 5V 50

*:Pulse test:Pulse width≤300us,duty cycle≤2%

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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