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Isc 2SD1510: Silicon NPN Darlington Power Transistor

The isc Silicon NPN Darlington Power Transistor 2SD1510 features a collector-emitter breakdown voltage of 60V, high DC current gain of at least 1000, and fast switching speed, making it suitable for power amplifier applications. Its absolute maximum ratings include a continuous collector current of 4A and a power dissipation of 35W at 25℃. ISC disclaims any warranty regarding the suitability of its products for specialized applications.

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28 views2 pages

Isc 2SD1510: Silicon NPN Darlington Power Transistor

The isc Silicon NPN Darlington Power Transistor 2SD1510 features a collector-emitter breakdown voltage of 60V, high DC current gain of at least 1000, and fast switching speed, making it suitable for power amplifier applications. Its absolute maximum ratings include a continuous collector current of 4A and a power dissipation of 35W at 25℃. ISC disclaims any warranty regarding the suitability of its products for specialized applications.

Uploaded by

jose valderi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD1510

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 1000(Min) @ IC= 3A, VCE= 3V
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 60 V

VCEO Collector-Emitter Voltage 60 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current-Continuous 4 A

ICM Collector Current-Peak 8 A

Collector Power Dissipation


PC 35 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD1510

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA 4.0 V

VBE(on) Base -Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V

ICBO Collector Cutoff Current VCB= 60V; IE= 0 100 μA

IEBO Emitter Cutoff Current VEB= 6V; IC= 0 2.0 mA

hFE -1 DC Current Gain IC= 0.5A ; VCE= 3V 1000

hFE -2 DC Current Gain IC= 3A ; VCE= 3V 1000 10000

fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 20 MHz

hFE-2Classifications

R Q P

1000-2500 2000-5000 4000-10000

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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