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NPN Power Transistor 2SC2525 Specs

This document provides information on the 2SC2525 silicon NPN power transistor from INCHANGE Semiconductor. It lists the transistor's absolute maximum ratings, electrical characteristics, and applications. The 2SC2525 is designed for audio and general purpose applications with a minimum collector-emitter breakdown voltage of 120V and good linearity of its DC current gain. It has been 100% avalanche tested for robust and reliable performance with minimum lot-to-lot variations.

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170 views2 pages

NPN Power Transistor 2SC2525 Specs

This document provides information on the 2SC2525 silicon NPN power transistor from INCHANGE Semiconductor. It lists the transistor's absolute maximum ratings, electrical characteristics, and applications. The 2SC2525 is designed for audio and general purpose applications with a minimum collector-emitter breakdown voltage of 120V and good linearity of its DC current gain. It has been 100% avalanche tested for robust and reliable performance with minimum lot-to-lot variations.

Uploaded by

Yahya Gökay Akay
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SC2525

DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 120 V

VCEO Collector-Emitter Voltage 120 V

VEBO Emitter-Base Voltage 7 V

IC Collector Current-Continuous 12 A

IE Emitter Current-Continuous -12 A

Collector Power Dissipation


PC 120 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SC2525

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 120 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 7 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5 A 1.8 V

VBE Base-Emitter Voltage IC= 5A; VCE= 5V 1.7 V

ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA

IEBO Emitter Cutoff Current VEB= 7V; IC=0 10 μA

hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200

hFE-2 DC Current Gain IC= 7A; VCE= 5V 40

COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 300 pF

fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 80 MHz

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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